NGTB30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
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Features
•
•
•
•
•
Optimized for Very Low VCEsat
Low Switching Loss Reduces System Power Dissipation
Soft Fast Reverse Recovery Diode
5 ms Short−Circuit Capability
These are Pb−Free Devices
30 A, 600 V
VCEsat = 1.45 V
C
Typical Applications
• Power Factor Correction
G
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
ICM
IF
E
A
60
30
120
A
A
60
30
Diode Pulsed Current
Tpulse Limited by TJmax
IFM
120
A
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
VGE
$20
$30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
G
C
TO−247
CASE 340L
STYLE 4
E
MARKING DIAGRAM
30N60F
AYWWG
W
167
67
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
ORDERING INFORMATION
Device
NGTB30N60FWG
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 1
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB30N60FW/D
NGTB30N60FWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.75
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.06
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 150°C
VCEsat
1.25
−
1.45
1.75
1.70
−
V
VGE = VCE, IC = 200 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
4100
−
pF
Coes
−
150
−
Cres
−
95
−
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Qg
170
Qge
34
Qgc
83
td(on)
81
tr
31
td(off)
190
tf
110
Eon
0.65
Turn−off switching loss
Eoff
0.65
Total switching loss
Ets
1.30
Turn−on delay time
td(on)
80
tr
32
td(off)
200
tf
230
Gate to emitter charge
VCE = 480 V, IC = 30 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Eon
0.80
Turn−off switching loss
Eoff
1.1
Total switching loss
Ets
1.90
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2
ns
mJ
ns
mJ
NGTB30N60FWG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
VF
1.45
1.90
2.35
V
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 30 A, VR = 200 V
diF/dt = 200 A/ms
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3
trr
72
ns
Qrr
15
mC
Irrm
6
A
NGTB30N60FWG
TYPICAL CHARACTERISTICS
200
TJ = 25°C
140
120
11 V
100
80
10 V
60
40
9V
20
7V
8V
0
0
1
3
4
6
5
7
140
120
100
11 V
80
10 V
60
40
9V
20
8V
7V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
160
TJ = −55°C
VGE = 17 V to 13 V
160
140
11 V
120
100
80
10 V
60
40
9V
20
0
VGE = 17 V to 13 V
160
0
8
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
2
TJ = 150°C
180
VCE, COLLECTOR−EMITTER VOLTAGE (V)
180
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
160
VGE = 17 V to 13 V
7 V to 8 V
0
1
2
3
4
5
6
7
140
TJ = 25°C
120
TJ = 150°C
100
80
60
40
20
0
8
0
4
8
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
10,000
Cies
IC = 60 A
2.5
2.0
IC = 30 A
1.5
IC = 15 A
IC = 5 A
1.0
1000
Coes
100
Cres
0.5
0
−75
16
12
VCE, COLLECTOR−EMITTER VOLTAGE (V)
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
180
−25
25
75
125
175
10
0
20
40
60
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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4
100
NGTB30N60FWG
TYPICAL CHARACTERISTICS
20
TJ = 25°C
50
TJ = 150°C
40
30
20
10
0
SWITCHING LOSS (mJ)
1.2
0.5
1.0
1.5
2.0
0.8
3.0
3.5
VCE = 480 V
15
10
5
0
Figure 8. Typical Gate Charge
Eoff
40
60
80
100
1.5
100
120
140
tr
10
1
160
VCE = 400 V
VGE = 15 V
IC = 30 A
Rg = 10 W
0
40
60
80
100
120
140 160
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1000
tf
Eoff
Eon
0.9
0.6
td(off)
td(on)
100
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.3
8
20
TJ, JUNCTION TEMPERATURE (°C)
1.2
0
td(on)
TJ, JUNCTION TEMPERATURE (°C)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1.8
16
200
td(off)
tf
0.2
20
175
1000
0.4
2.1
150
125
Figure 7. Diode Forward Characteristics
Eon
0
100
75
QG, GATE CHARGE (nC)
0.6
0
50
25
0
VF, FORWARD VOLTAGE (V)
VCE = 400 V
VGE = 15 V
IC = 30 A
Rg = 10 W
1
2.5
SWITCHING TIME (ns)
0
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
60
SWITCHING TIME (ns)
IF, FORWARD CURRENT (A)
70
24
32
40
48
56
1
64
8
16
24
32
40
48
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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5
56
64
NGTB30N60FWG
TYPICAL CHARACTERISTICS
2.5
SWITCHING LOSS (mJ)
1000
VCE = 400 V
VGE = 15 V
IC = 30 A
TJ = 150°C
2
td(off)
Eon
1.5
SWITCHING TIME (ns)
3
Eoff
1
0.5
5
1.8
25
35
45
1.2
55
65
75
15
25
35
45
55
65
75
85
1000
Eoff
0.3
275
325
375
425
475
525
td(off)
tf
100
td(on)
tr
10
VGE = 15 V
IC = 30 A
Rg = 10 W
TJ = 150°C
1
175
575
225
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
575
1000
100 ms
100
1 ms
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
5
Figure 14. Switching Time vs. Rg
0.6
50 ms
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
VCE = 400 V
VGE = 15 V
IC = 30 A
TJ = 150°C
Figure 13. Switching Loss vs. Rg
Eon
225
10
Rg, GATE RESISTOR (W)
0.9
0
175
tr
1
85
td(on)
Rg, GATE RESISTOR (W)
VGE = 15 V
IC = 30 A
Rg = 10 W
TJ = 150°C
1.5
SWITCHING LOSS (mJ)
15
SWITCHING TIME (ns)
0
tf
100
1
10
100
1000
100
10
1
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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6
NGTB30N60FWG
TYPICAL CHARACTERISTICS
1
RqJC = 0.75
50% Duty Cycle
R(t) (°C/W)
20%
0.1
10%
5%
Junction R1
2%
0.01
R2
Rn
C2
Cn
Ci = ti/Ri
1%
C1
0.00001
ti (sec)
0.03276
0.07477
0.12790
0.17518
0.22911
1.0E−4
6.84E−5
0.002
0.03
0.1
0.11135
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Ri (°C/W)
Case
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
R(t) (°C/W)
1
RqJC = 1.06
50% Duty Cycle
20%
0.1
Junction R1
Rn
Case
2%
C1
1%
0.00001
Cn
ti (sec)
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
C2
Ri (°C/W)
0.20043
0.42428
0.51036
0.34767
0.11135
Ci = ti/Ri
5%
0.01
R2
10%
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
Figure 21. Test Circuit for Switching Characteristics
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7
10
100
1000
NGTB30N60FWG
Figure 22. Definition of Turn On Waveform
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8
NGTB30N60FWG
Figure 23. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
STYLE 1:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
STYLE 5:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 6:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1.
2.
3.
4.
98ASB15080C
TO−247
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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