NGTB30N60L2WG

Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications • Maximum junction temperature Tj=175°C • Diode VF=1.7V typ. (IF=30A) • Diode trr=70ns typ. • 5μs short circuit capability • Pb-free, Halogen-free and RoHS Compliance C G N-channel E Applications • Power factor correction of white goods appliance Specifications Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified Parameter Symbol Collector to Emitter Voltage VCES Gate to Emitter Voltage @Tc=25°C *2 Limited by Tjmax @Tc=100°C *2 IC *1 C TO−247 CASE 340AK E Unit 600 VGES Collector Current (DC) Pulsed collector current, Value G V ±20 V 100 A 30 A Marking A @Tc=100°C *2 ICpulse 60 ICpeak 232 A IO 30 A PD 225 W Junction Temperature Tj 175 °C Storage Temperature Tstg −55 to +175 °C tp=100ms limited by Tjmax Pulsed collector current, tp=1ms limited by Tjmax Diode Average Output Current GTB30N 60L2 LOT No. Power Dissipation Tc=25°C (Our ideal heat dissipation condition) *2 Note : *1 Collector Current is calculated from the following formula. Tjmax - Tc IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc)) *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2014 August, 2014 80414TKIM TC-00003141/60314HK TC-00003126/31814TKIM No.A2308-1/8 NGTB30N60L2WG Electrical Characteristics at Ta = 25°C, Unless otherwise specified Value Parameter Symbol Conditions Unit min Collector to Emitter Breakdown Voltage Collector to Emitter Cut off Current V(BR)CES ICES IC=500μA, VGE=0V VCE=600V, VGE=0V Gate to Emitter Leakage Current IGES VGE=±20V, VCE =0V Gate to Emitter Threshold Voltage VGE(th) VCE =20V, IC=250μA VCE(sat) VGE=15V, IC=30A VGE=15V, IC=50A Diode Forward Voltage VF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-ON Delay Time td(on) Rise Time tr Turn-ON Time ton Turn-OFF Delay Time td(off) Fall Time tf Turn-OFF Time toff Turn-ON Energy max 600 V Tc=25°C 10 μA Tc=150°C 1 mA ±100 nA 4.5 Tc=25°C Collector to Emitter Saturation Voltage typ 1.4 6.5 V 1.6 V Tc=150°C 1.7 V Tc=25°C 1.65 V IF=30A VCE =20V, f=1MHz VCC=300V, IC=30A RG=30Ω, L=200μH VGE=0V/15V Vclamp=400V 1.7 V 4130 pF 114 pF 96 pF 100 ns 60 ns 540 ns 390 ns 80 ns 500 ns Eon 0.31 mJ Turn-OFF Energy Eoff 1.14 mJ Turn-ON Delay Time td(on) 98 ns Rise Time tr 85 ns Turn-ON Time ton Turn-OFF Delay Time td(off) Fall Time tf VGE=0V/15V Vclamp=400V Turn-OFF Time toff See Fig.1, See Fig.2 530 ns Turn-ON Energy Eon 0.638 mJ Turn-OFF Energy Eoff 2.755 mJ Total Gate Charge Qg 166 nC Gate to Emitter Charge Qge Gate to Collector “Miller” Charge Qgc Diode Reverse Recovery Time trr See Fig.1, See Fig.2 VCC=300V, IC=50A RG=30Ω, L=200μH VCE =300V, VGE=15V, IC=30A IF=10A, di/dt=100A/μs, VCC=50V, See Fig.3 650 ns 380 ns 90 ns 40 nC 70 nC 70 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta = 25°C, Unless otherwise specified Parameter Symbol Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) Thermal Resistance Diode (Junction to Case) Rth(j-c) (Diode) Thermal Resistance (Junction to Ambient) Rth(j-a) Conditions Tc=25°C (Our ideal heat dissipation condition)*2 Tc=25°C (Our ideal heat dissipation condition)*2 Value Unit 0.67 °C /W 1.5 °C /W 41 °C /W Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. No.A2308-2/8 NGTB30N60L2WG No.A2308-3/8 NGTB30N60L2WG No.A2308-4/8 NGTB30N60L2WG No.A2308-5/8 NGTB30N60L2WG No.A2308-6/8 NGTB30N60L2WG Fig.1 Switching Time Test Circuit Fig.2 Timing Chart VGE 90% 10% 0 IC 90% 0 VCE 90% 10% 10% tf td(off) toff 10% 10% tr td(on) ton Fig.3 Reverse Recovery Time Test Circuit No.A2308-7/8 NGTB30N60L2WG Package Dimensions NGTB30N60L2WG TO-247 CASE 340AK ISSUE O unit : mm Ordering & Package Information Device NGTB30N60L2WG Package TO-247-3L Shipping note 30 pcs. / tube Pb-Free and Halogen Free ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2308-8/8