DATA SHEET
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IGBT - Ultra Field Stop
40 A, 1200 V
VCEsat = 1.7 V
Eoff = 1.1 mJ
NGTB40N120FL3WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast co−packaged free wheeling diode with a low forward
voltage.
C
G
Features
•
•
•
•
•
E
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
G
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
C
TO−247
CASE 340AM
E
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM
IF
40N120FL3
AYWWG
A
80
40
160
A
A
80
40
Diode pulsed current, Tpulse limited
by TJmax
IFM
160
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
±20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
W
454
227
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120FL3WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
August, 2021 − Rev. 5
1
Publication Order Number:
NGTB40N120FL3W/D
NGTB40N120FL3WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.33
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.61
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
1.7
2.3
1.95
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
0.5
0.4
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
4912
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
140
−
Cres
−
80
−
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
Qg
−
212
−
Qge
−
43
−
Qgc
−
102
−
td(on)
−
18
−
tr
−
31
−
td(off)
−
145
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15V
tf
−
107
−
Eon
−
1.6
−
Eoff
−
1.1
−
Total switching loss
Ets
−
2.7
−
Turn−on delay time
td(on)
−
20
−
tr
−
31
−
td(off)
−
153
−
tf
−
173
−
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
ns
mJ
ns
Eon
−
2.2
−
Turn−off switching loss
Eoff
−
1.7
−
Total switching loss
Ets
−
3.9
−
VF
−
−
3.0
2.8
3.4
−
V
trr
−
86
−
ns
mc
mJ
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Diode peak rate of fall of reverse recovery
current during tb
TJ = 25°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
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2
Qrr
−
0.56
−
Irrm
−
12
−
A
dIrrm/dt
−
−210
−
A/ms
NGTB40N120FL3WG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Reverse recovery time
trr
Reverse recovery charge
TJ = 125°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
Qrr
−
136
−
ns
−
1.47
−
mc
Irrm
dIrrm/dt
−
20
−
A
−
−212
−
A/ms
DIODE CHARACTERISTIC
Reverse recovery current
Diode peak rate of fall of reverse recovery
current during tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
11 V
120
100
80
10 V
60
40
9V
20
7V
0
160
1
2
3
4
5
6
10 V
60
40
9V
20
7 V and 8 V
1
2
3
4
5
6
7
8V
20
7V
0
1
2
3
4
5
6
7
120
11 V
TJ = 175°C
100
10 V
80
60
9V
40
8V
20
7V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
140
TJ = 25°C
120
100
TJ = 175°C
80
60
40
20
2
4
6
8
10
12
14
8
3.5
3.0
IC = 75 A
2.5
IC = 40 A
2.0
IC = 20 A
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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4
8
VGE = 20 V − 13 V
140
0
8
160
IC, COLLECTOR CURRENT (A)
9V
40
160
TJ = −55°C
80
0
60
Figure 2. Output Characteristics
100
0
10 V
80
Figure 1. Output Characteristics
11 V
0
11 V
TJ = 150°C
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
120
0
8
7
VGE = 20 V − 13 V
140
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE =
20 V − 13 V
140
8V
IC, COLLECTOR CURRENT (A)
0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
160
VGE = 20 V − 13 V
TJ = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
160
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
100
Cies
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
10,000
TJ = 25°C
1000
Coes
100
Cres
90
80
70
60
50
40
30
TJ = 175°C
20
10
10
0
10
20
30
40
50
60
70
80
90
0
100
12
10
8
6
VCE = 600 V
VGE = 15 V
IC = 40 A
4
2
0
50
100
150
200
2.5
3.0
3.5
4.0
Eoff
1.3
0.8
0
20
40
60
80
100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
SWITCHING LOSS (mJ)
100
tf
tr
td(on)
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
20
Eon
QG, GATE CHARGE (nC)
td(off)
40
60
80
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
5
4
Eon
Eoff
3
2
1
0
100 120 140 160 180 200
10
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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5
4.5
1.8
6
0
2.0
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
2.3
0.3
250
1000
1
1.5
Figure 8. Diode Forward Characteristics
2.8
10
1.0
Figure 7. Typical Capacitance
14
0
0.5
VF, FORWARD VOLTAGE (V)
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
16
SWITCHING TIME (ns)
TJ = 25°C
80
90
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
10
1000
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
td(off)
tf
100
tr
td(on)
10
1
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
10
20
8
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
9
7
6
5
4
3
Eoff
2
1
30
40
50
60
70
80
0
90
0
40
50
60
Figure 14. Switching Loss vs. RG
70
4.0
SWITCHING LOSS (mJ)
td(off)
tf
tr
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
100
td(on)
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 40 A
0
10
20
30
40
50
60
Eoff
2.0
1.5
1.0
0.5
0
70
350 400
450
500
550
600
650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
VGE = 15 V
TJ = 175°C
IC = 40 A
Rg = 10 W
td(off)
tr
td(on)
350 400
Eon
2.5
RG, GATE RESISTOR (W)
tf
100
3.0
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
30
Figure 13. Switching Time vs. IC
1000
SWITCHING TIME (ns)
20
RG, GATE RESISTOR (W)
3.5
10
10
IC, COLLECTOR CURRENT (A)
1000
10
Eon
450
500
550
600
650
700
100
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
750 800
50 ms
100 ms
1
10
1 ms
100
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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6
10K
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
350
10
VGE = 15 V, TC = 175°C
1
10
100
1K
10K
250
TJ = 175°C, IF = 40 A
200
150
100
TJ = 25°C, IF = 40 A
50
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
3.5
TJ = 175°C, IF = 40 A
3.0
2.5
2.0
1.5
TJ = 25°C, IF = 40 A
1.0
0.5
0
VR = 400 V
300
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Irm, REVERSE RECOVERY CURRENT (A)
1
Qrr, REVERSE RECOVERY CHARGE (mC)
trr, REVERSE RECOVERY TIME (ns)
100
VR = 400 V
100
300
500
700
900
1100
VR = 400 V
40
TJ = 175°C, IF = 40 A
30
20
TJ = 25°C, IF = 40 A
10
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
4.5
4.0
IC = 75 A
3.5
IC = 40 A
3.0
2.5
IC = 20 A
2.0
1.5
1.0
−75 −50 −25
0
25
75 100 125 150 175 200
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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7
1100
50
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1000
1100
NGTB40N120FL3WG
TYPICAL CHARACTERISTICS
180
160
TC = 110°C
140
TC = 80°C
Ipk (A)
120
VCE = 600 V,
Rgate = 10 W,
VGE = 15 V
TC = 110°C
100
TC = 80°C
80
60
Ramp
Square
40
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.33
50% Duty Cycle
0.1 20%
10%
5%
0.01
2%
Junction R1
R2
Rn
C1
C2
Cn
0.001
0.0001
Ri (°C/W) Ci (J/W)
0.0065
0.0154
0.0811
0.0039
0.0186
0.0539
0.1007
0.0314
0.1115
0.0897
0.0172
1.8437
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Case
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.61
50% Duty Cycle
20%
0.1 10%
Junction R1
R2
Rn
C1
C2
Cn
Case
5%
2%
0.01
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
0.00001
Ri (°C/W) Ci (J/W)
0.000090
0.000661
0.002014
0.002059
0.005527
0.031996
0.117443
0.129731
0.225628
0.551763
0.011089
0.015127
0.015703
0.048571
0.057211
0.031254
0.026926
0.077082
0.140155
0.181237
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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8
0.1
1
NGTB40N120FL3WG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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9
NGTB40N120FL3WG
Figure 29. Definition of Turn Off Waveform
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AM
ISSUE C
DATE 07 SEP 2021
GENERIC
MARKING DIAGRAMS*
XXXXXXXXX
AYWWG
XXXXXXXXX
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON77284F
TO−247
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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