NGTB40N120FLWG

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 40 A, 1200 V VCEsat = 2.0 V Eoff = 1.6 mJ Features • Low Saturation Voltage using NPT Trench with Field Stop • • • • • Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C G Typical Applications • Solar Inverter • UPS Inverter E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 160 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C A 80 40 160 A 80 40 TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM 40N120FL AYWWG W 260 104 10 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. June, 2013 − Rev. 2 C A TSC © Semiconductor Components Industries, LLC, 2013 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N120FLWG Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N120FLW/D NGTB40N120FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.48 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat 1.50 − 2.0 2.2 2.2 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 1.0 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 10,000 − pF Coes − 240 − Cres − 180 − Qg − 415 − Qge − 80 − Qgc − 170 − td(on) − 130 − tr − 41 − td(off) − 385 − tf − 140 − Eon − 2.6 − Turn−off switching loss Eoff − 1.6 − Total switching loss Ets − 4.2 − Turn−on delay time td(on) − 130 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V Rise time tr − 42 − td(off) − 400 − tf − 230 − Eon − 3.0 − Turn−off switching loss Eoff − 2.8 − Total switching loss Ets − 5.8 − Turn−off delay time Fall time Turn−on switching loss TJ = 125°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V http://onsemi.com 2 ns mJ ns mJ NGTB40N120FLWG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF − − 2.7 3.5 3.5 V TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms trr − 200 − ns Qrr − 1.5 − mc Irrm − 15 − A trr − 260 − ns Qrr − 2.0 − mc Irrm − 22 − A DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge TJ = 125°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current http://onsemi.com 3 NGTB40N120FLWG TYPICAL CHARACTERISTICS TJ = 25°C 10 V 120 100 80 9V 60 40 8V 20 7V 0 1 2 3 4 5 6 7 11 V VGE = 20 to 13 V 120 10 V 100 9V 80 60 8V 40 7V 20 0 8 TJ = 150°C 140 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 200 VGE = 20 to 11 V TJ = −40°C 140 10 V IC, COLLECTOR CURRENT (A) 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 0 120 100 80 9V 60 40 20 8V 0 7V 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 VGE = 20 to 11 V 1 2 3 4 5 6 7 180 160 TJ = 150°C 140 120 100 80 60 40 TJ = 25°C 20 0 0 8 8 4 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 IC = 80 A 2.5 IC = 40 A 2.0 1.5 IC = 10 A 1.0 IC = 5 A Cies 10000 1000 Coes 100 Cres 0.5 0.0 −50 12 100000 3.5 CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 160 −20 10 40 70 100 130 160 10 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 4 NGTB40N120FLWG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 120 100 80 60 TJ = 25°C TJ = 150°C 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 10 5 0 0 60 240 300 360 Figure 8. Typical Gate Charge 420 480 1000 td(off) SWITCHING TIME (ns) Eon 2 Eoff 1.5 1 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 0.5 0 20 40 60 80 100 120 140 tf td(on) 100 tr 10 1 160 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 8 td(off) 7 Eoff 6 5 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 180 Figure 7. Diode Forward Characteristics 2.5 Eon 4 3 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 2 1 0 120 QG, GATE CHARGE (nC) 3 SWITCHING LOSS (mJ) VCE = 600 V VF, FORWARD VOLTAGE (V) 3.5 0 15 5 15 25 35 45 55 65 75 100 tr 10 1 85 tf td(on) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 5 75 85 NGTB40N120FLWG TYPICAL CHARACTERISTICS 100000 12 VCE = 600 V VGE = 15 V IC = 40 A TJ = 150°C 8 td(off) SWITCHING TIME (ns) SWITCHING LOSS (mJ) 10 Eon 6 Eoff 4 10000 td(on) tf 1000 tr VCE = 600 V VGE = 15 V IC = 40 A TJ = 150°C 10 2 0 5 15 25 35 45 55 65 75 1 85 45 55 65 75 Figure 14. Switching Time vs. Rg 85 10000 td(off) Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 35 Figure 13. Switching Loss vs. Rg Eoff 3.2 2.4 1.6 VGE = 15 V IC = 40 A TJ = 150°C Rg = 10 W 0.8 375 425 475 525 575 625 675 725 tf td(on) 1000 tr 10 VGE = 15 V IC = 40 A TJ = 150°C Rg = 10 W 1 375 425 775 475 525 575 625 675 725 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 50 ms 100 100 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 25 Rg, GATE RESISTOR (W) 4 1 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 15 Rg, GATE RESISTOR (W) 4.8 0 5 1 10 100 100 10 1 1000 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 6 775 NGTB40N120FLWG TYPICAL CHARACTERISTICS 180 VCE = 400 V, TJ ≤ 150°C Rgate = 10 W, VGE = 0/15 V, Tcase = 80 or 110°C (as noted), D = 0.5 160 80°C 140 80°C Ipk (A) 120 100 110°C 110°C 80 60 40 20 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 19. Collector Current vs. Switching Frequency THERMAL RESPONSE (ZqJC) 1 RqJC = 0.48 50% Duty Cycle 0.1 20% Junction R1 10% 5% 0.01 Rn C2 Cn Case Ci = ti/Ri 2% C1 1% 0.001 0.000001 R2 Ri (°C/W) 0.01616 0.04030 0.060 0.090 0.176 0.093 ti (sec) 1.0E−4 1.76E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 20. IGBT Transient Thermal Impedance THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.5 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 Rn Case C1 Single Pulse 0.00001 C2 Ri (°C/W) 0.19655 0.414 0.5 0.345 0.0934 Ci = ti/Ri 1% 0.001 0.000001 R2 Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 Figure 21. Diode Transient Thermal Impedance http://onsemi.com 7 10 100 1000 NGTB40N120FLWG Figure 22. Test Circuit for Switching Characteristics http://onsemi.com 8 NGTB40N120FLWG Figure 23. Definition of Turn On Waveform http://onsemi.com 9 NGTB40N120FLWG Figure 24. Definition of Turn Off Waveform http://onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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