NGTB40N120IHLWG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 40 A, 1200 V VCEsat = 1.90 V Eoff = 1.40 mJ Features • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices C Typical Applications G • Inductive Heating • Consumer Appliances • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 320 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 80 40 320 G C TO−247 CASE 340L STYLE 4 E A A 80 40 MARKING DIAGRAM 40N120IHL AYWWG W 260 104 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N120IHLWG © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N120IHLW/D NGTB40N120IHLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.48 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat − − 1.90 2.1 2.35 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 200 nA Cies − 10400 − pF Coes − 245 − Cres − 185 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge nC Qg 420 Qge 95 Qgc 178 TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(off) 360 tf 130 Eoff 1.40 mJ TJ = 125°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(off) 380 ns tf 185 Eoff 2.6 VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF 1.6 1.8 VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns mJ DIODE CHARACTERISTIC Forward voltage http://onsemi.com 2 1.8 V NGTB40N120IHLWG TYPICAL CHARACTERISTICS 120 140 VGE = 20 to 11 V TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 10 V 100 80 9V 60 40 20 0 8V 7V 0 1 2 3 4 60 40 8V 20 7V 0 1 2 3 4 5 Figure 1. Output Characteristics Figure 2. Output Characteristics 160 VGE = 20 to 11 V 140 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 11 V 80 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 V 100 TJ = −40°C 80 60 9V 40 7V 20 8V 0 1 2 3 4 140 120 100 80 60 40 5 TJ = 150°C 20 0 TJ = 25°C 0 2 4 6 8 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 12 140 IF, FORWARD CURRENT (A) 100000 Cies 10000 CAPACITANCE (pF) 15 V 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 0 120 0 5 VGE = 20 to 11 V TJ = 150°C 1000 Coes 100 Cres 120 TJ = 25°C 100 TJ = 125°C 80 60 40 20 0 10 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics http://onsemi.com 3 3.0 NGTB40N120IHLWG TYPICAL CHARACTERISTICS Eoff, TURN−OFF SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 16 VCE = 600 V 12 8 4 0 0 50 100 150 200 250 300 350 400 450 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 4.5 3.5 3 2.5 2 1.5 1 0.5 0 18 22 26 30 34 38 42 46 50 54 Figure 10. Energy Loss vs. IC td(off) 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 22 26 30 34 38 42 46 50 54 58 62 58 62 6 5 4 3 2 VCE = 600 V VGE = 15 V IC = 40 A TJ = 150°C 1 0 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W) Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. Rg http://onsemi.com 4 160 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 4 Figure 9. Switching Time vs. Temperature Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0.5 IC, COLLECTOR CURRENT (A) tf 1 18 1 TJ, JUNCTION TEMPERATURE (°C) 1000 10 1.5 Figure 8. Energy Loss vs. Temperature tf 0 2 Figure 7. Typical Gate Charge Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1 2.5 TJ, JUNCTION TEMPERATURE (°C) td(off) 10 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 3 QG, GATE CHARGE (nC) 1000 100 3.5 75 85 NGTB40N120IHLWG TYPICAL CHARACTERISTICS 4 1000 td(off) 100 tf VCE = 600 V VGE = 15 V IC = 40 A TJ = 150°C 10 1 Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 10000 5 15 25 35 45 55 65 75 1.5 VGE = 15 V IC = 40 A Rg = 10 W TJ = 150°C 1 0.5 0 375 425 475 525 575 625 675 725 775 Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) tf VGE = 15 V IC = 40 A Rg = 10 W TJ = 150°C 375 425 475 525 575 625 675 725 100 ms 1 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 775 50 ms 100 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area 1000 IC, COLLECTOR CURRENT (A) 1 2.5 Rg, GATE RESISTOR (W) td(off) 10 3 85 1000 100 3.5 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB40N120IHLWG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 1 RqJC = 0.48 50% Duty Cycle 0.1 20% Junction R1 10% 5% 0.01 Rn C2 Cn Case Ci = ti/Ri 2% C1 1% 0.001 0.000001 R2 Ri (°C/W) 0.01616 0.04030 0.060 0.090 0.176 0.093 ti (sec) 1.0E−4 1.76E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.5 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 Rn Case C1 Single Pulse 0.00001 C2 Ri (°C/W) 0.19655 0.414 0.5 0.345 0.0934 Ci = ti/Ri 1% 0.001 0.000001 R2 Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 Figure 19. Diode Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 100 NGTB40N120IHLWG Figure 21. Definition of Turn Off Waveform http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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