NGTB40N120S3WG

NGTB40N120S3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering low switching losses. The IGBT is well suited for applications that require fast switching IGBT with low VF diodes, e.g. phase−shifted full bridge, etc. Incorporated into the device is a free wheeling diode with a low forward voltage. www.onsemi.com 40 A, 1200 V VCEsat = 1.7 V Eoff = 1.1 mJ Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Low VF Reverse Diode Optimized for High Speed Switching These are Pb−Free Devices C Typical Applications • Welding • Uninterruptible Power Inverter Supplies (UPS) • Motor Control G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C A 160 40 ICM G C 160 A IF TO−247 CASE 340AL E A MARKING DIAGRAM 160 40 Diode pulsed current, Tpulse limited by TJmax IFM 160 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD 40N120S3 AYWWG W 454 227 Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 10 seconds TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N120S3WG © Semiconductor Components Industries, LLC, 2016 March, 2018 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N120S3W/D NGTB40N120S3WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.34 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 1.7 2.3 1.95 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 0.5 0.4 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 4912 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 140 − Cres − 80 − Gate−emitter threshold voltage Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge Qg − 212 − Qge − 43 − Qgc − 102 − td(on) − 12 − tr − 25 − td(off) − 145 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15V tf − 107 − Eon − 2.2 − Eoff − 1.1 − Total switching loss Ets − 3.3 − Turn−on delay time td(on) − 13 − tr − 24 − td(off) − 153 − tf − 173 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V ns mJ ns Eon − 2.8 − Turn−off switching loss Eoff − 1.6 − Total switching loss Ets − 4.4 − VF − − 2.0 2.55 2.6 − V trr − 163 − ns mc mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 175°C Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 500 A/ms www.onsemi.com 2 Qrr − 2.9 − Irrm − 30 − A dIrrm/dt − 137 − A/ms NGTB40N120S3WG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit Reverse recovery time trr − 250 − ns Reverse recovery charge TJ = 175°C IF = 40 A, VR = 400 V diF/dt = 500 A/ms Qrr − 5.3 − mc Irrm − 40 − A dIrrm/dt − 482 − A/ms DIODE CHARACTERISTIC Reverse recovery current Diode peak rate of fall of reverse recovery current during tb Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB40N120S3WG TYPICAL CHARACTERISTICS 160 11 V 120 100 80 10 V 60 40 9V 20 7V 8V 0 160 1 2 3 5 4 6 7 120 11 V 100 80 10 V 60 9V 40 8V 20 7V 0 8 3 5 4 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics VGE = 20 to 13 V IC, COLLECTOR CURRENT (A) 11 V 120 100 80 10 V 60 40 9V 20 7−8 V 0 1 2 3 4 5 6 7 140 120 11 V TJ = 175°C 100 10 V 80 60 9V 40 8V 20 7V 0 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 160 140 120 100 80 60 40 TJ = 175°C 20 TJ = 25°C 0 2 4 6 8 8 160 VGE = 20 to 13 V 140 0 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = −55°C 0 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 140 0 0 IC, COLLECTOR LOSS (mJ) VGE = 20 to 13 V TJ = 150°C 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 VGE = 20 to 13 V TJ = 25°C 10 12 14 3.5 IC = 75 A 3.0 2.5 IC = 40 A 2.0 IC = 20 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 4 8 NGTB40N120S3WG TYPICAL CHARACTERISTICS 10,000 100 1000 IF, FORWARD CURRENT (A) CAPACITANCE (pF) TJ = 25°C 90 Cies TJ = 25°C Coes 100 Cres TJ = 175°C 80 70 60 50 40 30 20 10 10 0 0 10 20 30 40 50 60 70 80 90 0 100 1.5 2.0 2.5 3.0 3.5 4.0 VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 3.3 14 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 2.8 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 16 12 10 8 6 VCE = 600 V VGE = 15 V IC = 40 A 4 2 4.5 Eon 2.3 1.8 Eoff 1.3 0.8 0.3 0 0 50 100 150 200 0 250 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 7 1000 tf td(off) 100 tr td(on) 10 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 1 0 20 40 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 6 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0.5 5 Eon 4 Eoff 3 2 1 0 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 5 80 90 NGTB40N120S3WG TYPICAL CHARACTERISTICS 10 1000 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 9 SWITCHING LOSS (mJ) SWITCHING TIME (ns) tf td(off) 100 tr td(on) 10 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 1 10 20 6 5 4 3 Eoff 2 0 30 40 50 60 70 80 90 0 20 10 30 40 50 70 60 IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 4.5 SWITCHING LOSS (mJ) tf tr td(on) 100 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 10 10 20 30 40 50 60 3.5 3.0 Eon 2.5 2.0 Eoff 1.5 1.0 0.5 0 350 400 450 70 500 550 600 650 700 750 800 Rg, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 1000 VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C tf IC, COLLECTOR CURRENT (A) 0 VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C 4.0 td(off) SWITCHING TIME (ns) 7 Eon 1 1000 SWITCHING TIME (ns) 8 td(off) 100 tr td(on) 100 dc operation 10 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 1 ms 0.1 10 350 400 450 500 550 600 650 700 750 1 800 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 6 10,000 NGTB40N120S3WG TYPICAL CHARACTERISTICS 400 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 TJ = 175°C, IF = 40 A 300 250 200 TJ = 25°C, IF = 40 A 150 100 50 0 1 10 100 1000 10,000 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt 6 TJ = 175°C, IF = 40 A 5 4 3 TJ = 25°C, IF = 40 A 2 1 VR = 400 V 0 100 300 500 700 900 1100 Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 175°C, IF = 40 A 50 40 TJ = 25°C, IF = 40 A 30 20 10 VR = 400 V 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 3.5 IF = 80 A 3.0 2.5 IF = 40 A 2.0 IF = 20 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 7 1100 60 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) VR = 400 V 350 1100 NGTB40N120S3WG TYPICAL CHARACTERISTICS 180 Ramp, TC = 110°C 160 Square, TC = 80°C 140 Ramp, TC = 80°C Ipk (A) 120 Square, TC = 110°C 100 80 60 40 VCE = 600 V, RG = 10 W, VGE = 15 V 20 0 0.1 0.01 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.34 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Junction R1 R2 Rn C1 C2 Cn Case Ci = ti/Ri 0.001 Single Pulse Ri (°C/W) Ci (J/W) 0.0065 0.0811 0.0186 0.1007 0.1115 0.0172 0.0154 0.0039 0.0539 0.0314 0.0897 1.8437 0.0001 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 ON−PULSE WIDTH (s) R(t), SQUARE−WAVE PEAK (°C/W) Figure 25. IGBT Transient Thermal Impedance 1 RqJC = 0.50 50% Duty Cycle 0.1 20% 10% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 5% 2% Junction R1 R2 Rn C1 C2 Cn Case 0.01 Ci = ti/Ri Single Pulse Ri (°C/W) Ci (J/W) 0.017265 0.023397 0.025095 0.073345 0.093146 0.043705 0.060153 0.127694 0.246682 0.070293 0.000058 0.000427 0.001260 0.001363 0.003395 0.022881 0.052571 0.078312 0.128193 1.422617 0.001 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 26. Diode Transient Thermal Impedance www.onsemi.com 8 0.1 1 NGTB40N120S3WG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 9 NGTB40N120S3WG Figure 29. Definition of Turn Off Waveform www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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