NGTB40N120SWG

NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 40 A, 1200 V VCEsat = 2.0 V Eoff = 1.10 mJ Features • • • • • TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices C Typical Applications • Welding G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 200 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD A 80 40 200 A C A E MARKING DIAGRAM W 535 267 40N120S AYWWG 10 ms TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Operating junction temperature range TO−247 CASE 340AL 80 40 TSC Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N120SWG © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N120SW/D NGTB40N120SWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 0.1 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7385 − pF Coes − 230 − Cres − 140 − Qg − 313 − Qge − 61 − Qgc − 151 − td(on) − 116 − tr − 42 − td(off) − 286 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V tf − 121 − Eon − 3.4 − Turn−off switching loss Eoff − 1.1 − Total switching loss Ets − 4.5 − Turn−on delay time td(on) − 111 − Turn−on switching loss Rise time Turn−off delay time Fall time TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V tr − 43 − td(off) − 304 − ns mJ ns tf − 260 − Eon − 4.4 − Turn−off switching loss Eoff − 2.5 − Total switching loss Ets − 6.9 − VGE = 0 V, IF = 40 A VGE = 0 V, IF = 50 A, TJ = 175°C VF − − 2.00 2.30 2.60 − V TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms trr − 240 − ns Qrr − 2.5 − mc Irrm − 18 − A Turn−on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NGTB40N120SWG TYPICAL CHARACTERISTICS 160 TJ = 25°C 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 VGE = 20 V to 13 V 120 100 11 V 80 10 V 60 40 9V 20 7V 8V 0 0 1 2 3 4 5 7 6 VGE = 20 V to 13 V 120 100 11 V 80 10 V 60 9V 40 8V 20 0 8 TJ = 150°C 140 7V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 100000 8 70 IF, FORWARD CURRENT (A) C, CAPACITANCE (pF) TJ = 25°C Cies 10000 1000 Coes 100 Cres 10 1 60 TJ = 25°C 50 TJ = 150°C 40 30 20 10 0 0 10 20 30 40 50 60 70 90 100 80 0 0.5 Figure 3. Typical Capacitance 1.5 2.0 2.5 3.0 3.5 4.0 Figure 4. Diode Forward Characteristics 16 12 14 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 10 VCE = 600 V 12 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 1.0 VF, FORWARD VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 8 6 4 VCE = 600 V VGE = 15 V IC = 40 A 2 0 0 50 100 150 200 250 300 8 Eon 6 Eoff 4 2 0 350 5 15 25 35 45 55 65 QG, GATE CHARGE (nC) IC, COLLECTOR CURRENT (A) Figure 5. Typical Gate Charge Figure 6. Switching Loss vs. IC http://onsemi.com 3 75 85 NGTB40N120SWG TYPICAL CHARACTERISTICS 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 1000 td(off) tf td(on) 100 tr 10 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 100 50 ms 10 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 5 15 25 35 45 55 65 75 100 ms dc operation 85 1 10 100 1000 10000 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 7. Switching Time vs. IC Figure 8. Safe Operating Area SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.28 50% Duty Cycle 0.1 20% 10% 5% 0.01 R1 Junction R2 Rn Case 2% C1 0.001 1E−05 Ci (J/°C) 0.006487 0.023120 0.061163 0.092651 1.252250 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 1E−06 Cn C2 Ri (°C/W) 0.048747 0.043252 0.051703 0.107932 0.025253 0.0001 0.01 0.001 0.1 1 ON−PULSE WIDTH (s) Figure 9. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.50 50% Duty Cycle 0.1 20% 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn 0.01 Single Pulse 0.001 1E−06 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1E−05 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 10. Diode Transient Thermal Impedance http://onsemi.com 4 Case Ri (°C/W) Ci (J/°C) 0.007703 0.010613 0.010097 0.032329 0.046791 0.044179 0.083870 0.000130 0.000942 0.003132 0.003093 0.006758 0.022635 0.119232 0.044938 0.703706 0.217376 0.460033 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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