NGTB40N60FLWG

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 40 A, 600 V VCEsat = 1.85 V C Typical Applications • Solar Inverters • Uninterruptable Power Supply (UPS) G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C ICM IF A 80 40 G 160 A MARKING DIAGRAM IFM 160 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) VGE $20 $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 40N60FL AYWWG W 257 102 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. July, 2013 − Rev. 0 TO−247 CASE 340L STYLE 4 E A 80 40 Diode Pulsed Current Tpulse Limited by TJmax © Semiconductor Components Industries, LLC, 2013 C 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB40N60FLWG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB40N60FLW/D NGTB40N60FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.470 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.06 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat 1.6 − 1.85 2.3 2.1 − V VGE = VCE, IC = 200 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 4200 − pF Coes − 170 − Cres − 110 − Qg − 171 − Qge − 36 − Qgc − 83 − td(on) − 85 − tr − 37 − td(off) − 174 − tf − 73 − Eon − 0.89 − Turn−off switching loss Eoff − 0.44 − Total switching loss Ets − 1.33 − Turn−on delay time td(on) − 82 − tr − 38 − td(off) − 179 − tf − 95 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V Eon − 1.10 − Turn−off switching loss Eoff − 0.84 − Total switching loss Ets − 1.94 − http://onsemi.com 2 ns mJ ns mJ NGTB40N60FLWG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF 1.55 − 2.2 2.3 2.60 − V trr − 77 − ns Qrr − 0.35 − mC Irrm − 7 − A DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 25°C IF = 40 A, VR = 200 V diF/dt = 200 A/ms http://onsemi.com 3 NGTB40N60FLWG TYPICAL CHARACTERISTICS 180 TJ = 25°C 160 140 120 100 11 V 80 10 V 60 40 9V 20 7V 0 1 2 4 6 5 7 100 11 V 80 60 10 V 40 9V 20 8V 7V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics TJ = −55°C 140 120 11 V 100 80 60 10 V 40 9V 20 7 V to 8 V 1 2 3 4 5 6 7 140 TJ = 150°C 100 80 60 40 20 0 8 TJ = 25°C 120 0 4 8 16 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10,000 IC = 60 A 2.5 8 160 VGE = 17 V to 13 V 0 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 0 140 0 8 VGE = 17 V to 13 V TJ = 150°C 160 VCE, COLLECTOR−EMITTER VOLTAGE (V) 180 IC, COLLECTOR CURRENT (A) 3 8V IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE = 17 V to 13 V Cies IC = 40 A CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 200 180 2.0 IC = 20 A 1.5 IC = 5 A 1.0 1000 Coes 100 Cres 0.5 0 −75 −50 −25 0 25 50 75 100 125 150 175 200 10 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 4 100 NGTB40N60FLWG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 TJ = 25°C 40 TJ = 150°C 30 20 10 0 0 0.5 1.0 2.0 1.5 2.5 3.0 50 25 0 75 100 125 150 175 Figure 8. Typical Gate Charge 200 1000 SWITCHING TIME (ns) Eon 1 Eoff 0.8 0.6 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 0.4 0 2.5 20 40 60 80 tf tr 10 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 Eon 1.5 Eoff 1 0.5 5 td(on) 100 TJ, JUNCTION TEMPERATURE (°C) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 2 td(off) 1 0 100 120 140 160 180 200 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 0 VCE = 400 V VGE = 15 V IC = 40 A Figure 7. Diode Forward Characteristics 0.2 SWITCHING LOSS (mJ) 5 QG, GATE CHARGE (nC) 1.2 0 10 VF, FORWARD VOLTAGE (V) 1.4 0 VCE = 480 V 15 20 35 50 65 td(off) td(on) tr 10 1 80 tf 100 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 5 20 35 50 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 5 80 NGTB40N60FLWG TYPICAL CHARACTERISTICS 4.5 1000 VCE = 400 V VGE = 15 V IC = 40 A TJ = 150°C SWITCHING LOSS (mJ) 3 td(off) Eon SWITCHING TIME (ns) 4 3.5 2.5 2 Eoff 1.5 1 td(on) tf 100 tr 10 VCE = 400 V VGE = 15 V IC = 40 A TJ = 150°C 0.5 0 5 15 25 35 45 55 65 75 1 85 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 55 65 75 Eon Eoff 275 85 1000 325 375 425 475 525 td(off) tf 100 td(on) tr 10 VGE = 15 V IC = 40 A Rg = 10 W TJ = 150°C 1 175 575 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 575 1000 100 ms 100 1 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 45 Figure 14. Switching Time vs. Rg 0.6 50 ms dc operation 10 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 35 Figure 13. Switching Loss vs. Rg 1.2 225 25 Rg, GATE RESISTOR (W) VGE = 15 V IC = 40 A Rg = 10 W TJ = 150°C 0 175 15 Rg, GATE RESISTOR (W) 2.4 1.8 5 1 10 100 1000 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 6 NGTB40N60FLWG TYPICAL CHARACTERISTICS 1 RqJC = 0.470 50% Duty Cycle 20% R(t) (°C/W) 0.1 10% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 5% 2% 0.01 Junction R1 Rn Case Ci = ti/Ri Single Pulse 0.001 0.000001 R2 C1 0.00001 0.0001 0.001 C2 Cn 0.01 0.1 Ri (°C/W) ti (sec) 0.007192 0.000100 0.010280 0.010881 0.033233 0.020448 0.000100 0.041319 0.027633 0.000100 0.309198 0.000139 0.031623 0.000973 0.002906 0.003009 0.015465 10.0000 0.076534 0.361892 316.228 0.323417 1 10 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 R(t) (°C/W) 1 RqJC = 1.06 50% Duty Cycle 20% 0.1 Junction R1 Rn Case 2% C1 1% 0.00001 Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 C2 Ri (°C/W) 0.20043 0.42428 0.51036 0.34767 0.11135 Ci = ti/Ri 5% 0.01 R2 10% 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 7 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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