NGTB40N65IHRWG
IGBT with Monolithic
Reverse Conducting Diode
This Insulated Gate Bipolar Transistor (IGBT) features robust and
cost effective Field Stop (FS2) trench construction with a monolithic
RC Diode. It provides a cost effective Solution for applications where
diode losses are minimal. The IGBT is optimized for low conduction
losses (low VCEsat) and is well suited for resonant or soft switching
applications.
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40 A, 650 V
VCEsat = 1.55 V
Eoff = 0.42 mJ
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Conduction Design for Soft Switching Application
Reduced Power Dissipation in Inducting Heating Application
Reliable and Cost Effective Single Die Solution
This is a Pb−Free Device
C
Typical Applications
• Inductive Heating
• Air Conditioning PFC
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
650
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, tpulse limited
by TJmax, 10 ms pulse, VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
A
80
40
ICM
G
C
160
TO−247
CASE 340AL
E
A
IF
A
MARKING DIAGRAM
80
40
Diode pulsed current, tpulse limited
by TJmax, 10 ms pulse, VGE = 0 V
IFM
160
A
Gate−emitter voltage
Transient Gate−emitter voltage
(tpulse = 5 ms, D < 0.10)
VGE
±20
±25
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
40N65IHR
AYWWG
W
405
202
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2016
June, 2017 − Rev. 1
1
Device
Package
Shipping
NGTB40N65IHRWG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB40N65IHR/D
NGTB40N65IHRWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case
Rating
RqJC
0.37
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
1.55
1.95
1.7
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
1.0
0.3
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
4628
−
pF
Coes
−
148
−
Cres
−
126
−
Gate charge total
Qg
−
190
−
Gate to emitter charge
Qge
−
38
−
Qgc
−
90
−
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
197
−
tf
−
74
−
Eoff
−
0.42
−
mJ
TJ = 175°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
210
−
ns
tf
−
106
−
Eoff
−
0.7
−
mJ
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
VF
−
−
1.50
1.70
1.80
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 400 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
120
140
TJ = 25°C
VGE = 13 V
to 20 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
11 V
100
80
10 V
60
9V
40
20
8V
7V
0
0
1
2
3
4
6
5
7
60
9V
40
8V
20
7V
0
1
2
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (A)
11 V
80
10 V
60
40
9V
20
7V
1
2
3
4
5
6
8V
7
TJ = 175°C
VGE = 13 V
to 20 V
120
11 V
100
10 V
80
60
9V
40
8V
20
7V
0
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
140
120
100
80
60
40
TJ = 175°C
20
TJ = 25°C
0
2
4
6
8
10
12
8
140
TJ = −55°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
10 V
80
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0
IC, COLLECTOR CURRENT (A)
100
8
100
0
11 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 13 V
to 20 V
0
TJ = 150°C
0
140
120
VGE = 13 V
to 20 V
120
14
2.6
2.4
IC = 60 A
2.2
2.0
IC = 40 A
1.8
1.6
IC = 20 A
1.4
1.2
1.0
−75
−25
25
75
125
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
175
8
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
10K
100
90
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
Cies
TJ = 25°C
1K
Coes
Cres
100
TJ = 25°C
80
TJ = 175°C
70
60
50
40
30
20
10
0
10
0
10
20
30
40
50
60
70
80
90
100
0
1.0
1.5
2.0
2.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
20
3.0
0.75
VCE = 400 V
VGE = 15 V
IC = 40 A
18
16
0.70
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0.5
14
12
10
8
6
4
E(off)
0.65
0.60
0.55
0.50
0.45
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
0.40
0.35
2
0
0.30
0
50
100
200
150
0
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1.8
1000
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1.6
tdoff
tf
100
10
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1.4
E(off)
1.2
1.0
0.8
0.6
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
0.4
0.2
0
1
0
25
50
75
100
125
150
175
10
200
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
80
90
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
2.0
1000
td(off)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1.8
tf
100
10
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
20
30
40
50
60
70
80
1.4
Eoff
1.2
1.0
0.8
0.6
0.4
90
0
10
20
30
40
50
60
IC, COLLECTOR CURRENT (A)
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. Rg
10K
70
1.2
VCE = 400 V
VGE = 15 V
IC = 40 A
TJ = 175°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1.6
0.2
0
1
10
VCE = 400 V
VGE = 15 V
IC = 40 A
TJ = 175°C
td(off)
1K
tf
100
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 175°C
1.0
Eoff
0.8
0.6
0.4
0.2
10
0
0
10
20
30
40
50
60
70
150 200 250
350
400
450
500
550 600
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. Rg
Figure 16. Switching Loss vs. VCE
1000
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
300
td(off)
tf
100
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 175°C
10
100 ms
100
1 ms
50 ms
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
200
300
400
500
600
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
1000
NGTB40N65IHRWG
TYPICAL CHARACTERISTICS
2.75
VF, FORWARD VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1K
100
10
VGE = 15 V
TC = 175°C
1
1
10
100
2.25
IC = 60 A
2.00
1.75
IC = 40 A
1.50
IC = 20 A
1.25
1.00
−75
10K
1K
2.50
−25
25
75
125
175
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. Forward Voltage vs. Junction
Temperature
1
R(t) (°C/W)
50% Duty Cycle
RqJC = 0.37
0.1 20%
10%
5%
0.01
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
2%
Junction R1
0.001
R2
Rn Case
C2
Cn
Ci = ti/Ri
Single Pulse
C1
0.0001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
Figure 22. Test Circuit for Switching Characteristics
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6
0.1
Ri (°C/W)
ti (sec)
0.0414
0.0388
0.0323
0.1006
0.1364
0.0233
0.0024
0.0082
0.0310
0.0314
0.0733
1.3573
1
NGTB40N65IHRWG
Figure 23. Definition of Turn Off Waveform
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7
NGTB40N65IHRWG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGBT40N65IHR/D