NGTB40N65IHRWG

NGTB40N65IHRWG IGBT with Monolithic Reverse Conducting Diode This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications. www.onsemi.com 40 A, 650 V VCEsat = 1.55 V Eoff = 0.42 mJ Features • • • • • Extremely Efficient Trench with Fieldstop Technology Low Conduction Design for Soft Switching Application Reduced Power Dissipation in Inducting Heating Application Reliable and Cost Effective Single Die Solution This is a Pb−Free Device C Typical Applications • Inductive Heating • Air Conditioning PFC • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 650 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, tpulse limited by TJmax, 10 ms pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C A 80 40 ICM G C 160 TO−247 CASE 340AL E A IF A MARKING DIAGRAM 80 40 Diode pulsed current, tpulse limited by TJmax, 10 ms pulse, VGE = 0 V IFM 160 A Gate−emitter voltage Transient Gate−emitter voltage (tpulse = 5 ms, D < 0.10) VGE ±20 ±25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 40N65IHR AYWWG W 405 202 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2016 June, 2017 − Rev. 1 1 Device Package Shipping NGTB40N65IHRWG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB40N65IHR/D NGTB40N65IHRWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case Rating RqJC 0.37 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 1.55 1.95 1.7 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 1.0 0.3 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 4628 − pF Coes − 148 − Cres − 126 − Gate charge total Qg − 190 − Gate to emitter charge Qge − 38 − Qgc − 90 − TJ = 25°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(off) − 197 − tf − 74 − Eoff − 0.42 − mJ TJ = 175°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(off) − 210 − ns tf − 106 − Eoff − 0.7 − mJ VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 175°C VF − − 1.50 1.70 1.80 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 400 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N65IHRWG TYPICAL CHARACTERISTICS 120 140 TJ = 25°C VGE = 13 V to 20 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 11 V 100 80 10 V 60 9V 40 20 8V 7V 0 0 1 2 3 4 6 5 7 60 9V 40 8V 20 7V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) 11 V 80 10 V 60 40 9V 20 7V 1 2 3 4 5 6 8V 7 TJ = 175°C VGE = 13 V to 20 V 120 11 V 100 10 V 80 60 9V 40 8V 20 7V 0 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 140 120 100 80 60 40 TJ = 175°C 20 TJ = 25°C 0 2 4 6 8 10 12 8 140 TJ = −55°C VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 10 V 80 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0 IC, COLLECTOR CURRENT (A) 100 8 100 0 11 V VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 13 V to 20 V 0 TJ = 150°C 0 140 120 VGE = 13 V to 20 V 120 14 2.6 2.4 IC = 60 A 2.2 2.0 IC = 40 A 1.8 1.6 IC = 20 A 1.4 1.2 1.0 −75 −25 25 75 125 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 175 8 NGTB40N65IHRWG TYPICAL CHARACTERISTICS 10K 100 90 IF, FORWARD CURRENT (A) CAPACITANCE (pF) Cies TJ = 25°C 1K Coes Cres 100 TJ = 25°C 80 TJ = 175°C 70 60 50 40 30 20 10 0 10 0 10 20 30 40 50 60 70 80 90 100 0 1.0 1.5 2.0 2.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 20 3.0 0.75 VCE = 400 V VGE = 15 V IC = 40 A 18 16 0.70 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0.5 14 12 10 8 6 4 E(off) 0.65 0.60 0.55 0.50 0.45 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 0.40 0.35 2 0 0.30 0 50 100 200 150 0 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 1.8 1000 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1.6 tdoff tf 100 10 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 1.4 E(off) 1.2 1.0 0.8 0.6 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W 0.4 0.2 0 1 0 25 50 75 100 125 150 175 10 200 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 80 90 NGTB40N65IHRWG TYPICAL CHARACTERISTICS 2.0 1000 td(off) SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1.8 tf 100 10 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W 20 30 40 50 60 70 80 1.4 Eoff 1.2 1.0 0.8 0.6 0.4 90 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. Rg 10K 70 1.2 VCE = 400 V VGE = 15 V IC = 40 A TJ = 175°C SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1.6 0.2 0 1 10 VCE = 400 V VGE = 15 V IC = 40 A TJ = 175°C td(off) 1K tf 100 VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C 1.0 Eoff 0.8 0.6 0.4 0.2 10 0 0 10 20 30 40 50 60 70 150 200 250 350 400 450 500 550 600 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. Rg Figure 16. Switching Loss vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 300 td(off) tf 100 VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C 10 100 ms 100 1 ms 50 ms dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 200 300 400 500 600 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 1000 NGTB40N65IHRWG TYPICAL CHARACTERISTICS 2.75 VF, FORWARD VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1K 100 10 VGE = 15 V TC = 175°C 1 1 10 100 2.25 IC = 60 A 2.00 1.75 IC = 40 A 1.50 IC = 20 A 1.25 1.00 −75 10K 1K 2.50 −25 25 75 125 175 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Reverse Bias Safe Operating Area Figure 20. Forward Voltage vs. Junction Temperature 1 R(t) (°C/W) 50% Duty Cycle RqJC = 0.37 0.1 20% 10% 5% 0.01 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 2% Junction R1 0.001 R2 Rn Case C2 Cn Ci = ti/Ri Single Pulse C1 0.0001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 21. IGBT Transient Thermal Impedance Figure 22. Test Circuit for Switching Characteristics www.onsemi.com 6 0.1 Ri (°C/W) ti (sec) 0.0414 0.0388 0.0323 0.1006 0.1364 0.0233 0.0024 0.0082 0.0310 0.0314 0.0733 1.3573 1 NGTB40N65IHRWG Figure 23. Definition of Turn Off Waveform www.onsemi.com 7 NGTB40N65IHRWG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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