NGTB45N60S1WG

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 45 A, 600 V VCEsat = 2.00 V EOFF = 0.53 mJ Features • • • • • TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices C Typical Applications • Welding G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF E A 90 45 A 90 45 G C Diode Pulsed Current TPULSE Limited by TJ Max IFM 180 A Pulsed collector current, Tpulse limited by TJmax ICM 180 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V TO−247 CASE 340AL E MARKING DIAGRAM $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 45N60S1 AYWWG W 300 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB45N60S1WG © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 1 1 Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB45N60S1W/D NGTB45N60S1WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.50 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.00 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 45 A VGE = 15 V, IC = 45 A, TJ = 175°C VCEsat 1.50 − 2.00 2.60 2.40 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − − 0.5 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 3115 − pF Coes − 149 − Cres − 88 − Qg − 125 − Qge − 32 − Qgc − 65 − td(on) − 72 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 45 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 33 − td(off) − 132 − tf − 68 − Eon − 1.25 − Eoff − 0.53 − Total switching loss Ets − 1.78 − Turn−on delay time td(on) − 70 − tr − 38 − td(off) − 135 − tf − 88 − Eon − 1.59 − Turn−off switching loss Eoff − 0.88 − Total switching loss Ets − 2.47 − VF 1.50 − 2.45 2.62 2.90 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 45 A Rg = 10 W VGE = 0 V/ 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 45 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 45 A VGE = 0 V, IF = 45 A, TJ = 175°C TJ = 25°C IF = 45 A, VR = 200 V diF/dt = 200 A/ms V trr − 70 − ns Qrr − 272 − nC Irrm − 7 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB45N60S1WG TYPICAL CHARACTERISTICS 140 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C 120 VGE = 20 to 15 V 13 V 100 80 60 11 V 40 10 V 7V 20 0 0 1 2 3 4 9V 8V 6 5 7 100 13 V 80 60 11 V 40 10 V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 110 100 IF, FORWARD CURRENT (A) 1000 Coes 100 Cres 0 10 90 80 70 TJ = 25°C 60 TJ = 150°C 50 40 30 20 10 TJ = 25°C 10 20 30 40 50 60 70 80 0 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF, FORWARD VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Typical Capacitance Figure 4. Diode Forward Characteristics 20 3.5 18 3 16 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 9V 8V 7V 20 0 Cies 14 12 10 8 6 4 VCE = 480 V VGE = 15 V IC = 35 A 2 0 15 V VGE = 20 to 17 V 8 10,000 C, CAPACITANCE (pF) TJ = 150°C 120 0 20 40 60 80 100 120 2.5 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W Eon 2 1.5 Eoff 1 0.5 0 15 140 20 25 30 35 40 45 50 55 60 QG, GATE CHARGE (nC) IC, COLLECTOR CURRENT (A) Figure 5. Typical Gate Charge Figure 6. Switching Loss vs. IC www.onsemi.com 3 65 70 75 NGTB45N60S1WG TYPICAL CHARACTERISTICS 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 1000 td(off) tf 100 td(on) tr 10 15 1 ms 100 ms 100 50 ms dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 20 25 30 35 40 45 50 55 60 1 65 70 75 IC, COLLECTOR CURRENT (A) 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 8. Safe Operating Area Figure 7. Switching Time vs. IC 1 50% Duty Cycle R(t) (°C/W) 0.1 RqJC = 0.50 20% 10% 5% 0.01 Junction R1 2% R2 Rn C2 Cn Case Ci = ti/Ri 0.001 C1 Single Pulse Ri (°C/W) 0.0642 0.0608 0.0507 0.1706 0.1422 0.0094 ti (sec) 0.0016 0.0052 0.0197 0.0185 0.0703 3.3481 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 9. IGBT Transient Thermal Impedance 1 RqJC = 1.0 50% Duty Cycle R(t) (°C/W) 0.1 20% Junction R1 10% 5% 0.01 R2 Rn C2 Cn Ci = ti/Ri 2% C1 Single Pulse 0.001 0.000001 0.00001 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 PULSE TIME (sec) Figure 10. Diode Transient Thermal Impedance www.onsemi.com 4 Case Ri (°C/W) ti (sec) 0.015509 0.020310 0.022591 0.050667 0.93366 0.195285 0.133203 0.173839 0.251384 0.039982 0.000064 0.000492 0.001400 0.001974 0.003387 0.005121 0.023740 0.047425 0.125795 2.501137 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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