NGTB50N120FL2WG

DATA SHEET www.onsemi.com IGBT - Field Stop II NGTB50N120FL2WG 50 A, 1200 V VCEsat = 2.20 V Eoff = 1.40 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. G Features • • • • • • C Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices E G Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding MARKING DIAGRAM Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C E TO−247 CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating C ICM IF A 100 50 200 50N120FL2 AYWWG A A 100 50 Diode Pulsed Current, Tpulse Limited by TJmax IFM 200 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TSC 10 ms Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 50N120FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package W 535 267 ORDERING INFORMATION Device Package Shipping NGTB50N120FL2WG TO−247 (Pb−Free) 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 October, 2021 − Rev. 6 1 Publication Order Number: NGTB50N120FL2W/D NGTB50N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat − − 2.20 2.60 2.40 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 0.1 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7383 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 233 − Cres − 139 − DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 50 A, VGE = 15 V Gate to collector charge Qg − 311 − Qge − 64 − Qgc − 155 − td(on) − 118 − tr − 48 − td(off) − 282 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15V tf − 113 − Eon − 4.40 − Eoff − 1.40 − Total switching loss Ets − 5.80 − Turn−on delay time td(on) − 114 − tr − 49 − td(off) − 298 − tf − 243 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 600 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15V ns mJ ns Eon − 5.65 − Turn−off switching loss Eoff − 3.26 − Total switching loss Ets − 8.91 − VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C VF − − 2.00 2.55 2.60 − V TJ = 25°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms trr − 256 − ns mc mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 175°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms Qrr − 2.7 − Irrm − 19 − A trr − 400 − ns Qrr − 5.75 − mc Irrm − 27 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB50N120FL2WG TYPICAL CHARACTERISTICS 200 TJ = 25°C 180 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 VGE = 20 V to 13 V 140 120 100 11 V 80 10 V 60 40 20 0 9V 8V 7V 0 1 2 3 4 5 7 6 11 V 80 10 V 60 9V 40 8V 20 7V 1 2 3 4 5 7 6 Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) 11 V 100 80 60 10 V 40 7V 20 1 2 3 4 9V 8V 5 6 7 8 200 TJ = −55°C 180 160 140 120 100 80 60 40 TJ = 150°C 20 0 0 8 TJ = 25°C 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 4.50 100000 4.00 IC = 100 A 3.50 3.00 IC = 50 A 2.50 IC = 25 A 2.00 1.50 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 100 Figure 1. Output Characteristics 120 0 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) 140 0 140 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 13 V 160 VGE = 20 V to 13 V 160 0 8 200 180 TJ = 150°C 180 Cies 10000 1000 Coes 100 Cres 10 0.50 0.00 −75 −50 −25 0 25 50 1 75 100 125 150 175 200 TJ = 25°C 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs TJ Figure 6. Typical Capacitance www.onsemi.com 3 90 100 NGTB50N120FL2WG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 TJ = 25°C 50 TJ = 150°C 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 8 6 4 VCE = 600 V VGE = 15 V IC = 50 A 2 0 0 50 100 250 200 150 QG, GATE CHARGE (nC) Figure 8. Typical Gate Charge 350 SWITCHING TIME (ns) Eon 4 3 Eoff 2 VCE = 600 V VGE = 15 V IC = 50 A Rg = 10 W 1 0 12 20 40 60 80 100 8 120 140 td(off) tf 100 tr 10 160 td(on) VCE = 600 V VGE = 15 V IC = 50 A Rg = 10 W 0 20 40 60 80 100 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature Eon Eoff 4 td(off) tf td(on) 100 tr VCE = 600 V VGE = 15 V IC = 50 A Rg = 10 W 2 15 25 160 1000 6 5 120 TJ, JUNCTION TEMPERATURE (°C) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 10 0 300 1000 SWITCHING TIME (ns) SWITCHING LOSS (mJ) VCE = 600 V VF, FORWARD VOLTAGE (V) 5 SWITCHING LOSS (mJ) 12 Figure 7. Diode Forward Characteristics 6 0 14 35 45 55 65 75 10 85 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 75 85 NGTB50N120FL2WG TYPICAL CHARACTERISTICS 10000 VCE = 600 V VGE = 15 V TJ = 150°C IC = 50 A SWITCHING LOSS (mJ) 16 14 12 SWITCHING TIME (ns) 18 Eon 10 8 6 Eoff 4 VCE = 600 V VGE = 15 V TJ = 150°C IC = 50 A 1000 td(off) td(on) tf 100 tr 2 0 5 15 25 35 55 45 65 75 10 5 85 15 25 35 45 55 65 75 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 85 1000 9 7 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 8 Eon 6 5 4 Eoff 3 VGE = 15 V TJ = 150°C IC = 50 A Rg = 10 W 2 1 0 350 400 450 500 550 600 650 700 750 td(on) 100 tr VGE = 15 V TJ = 150°C IC = 50 A Rg = 10 W 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) tf 10 350 800 1000 100 dc operation 10 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 td(off) 1 10 1 ms 100 1000 100 10 1 10000 VGE = 15 V, TC = 125°C 1 10 100 1000 10000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB50N120FL2WG TYPICAL CHARACTERISTICS 400 350 TJ = 175°C, IF = 50 A 300 250 200 150 TJ = 25°C, IF = 50 A 100 300 500 700 900 1100 1300 5 4 TJ = 25°C, IF = 50 A 3 2 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/m) diF/dt, DIODE CURRENT SLOPE (A/m) Figure 20. Qrr vs. diF/dt (VR = 400 V) 70 1300 3.5 VF, FORWARD VOLTAGE (V) 60 TJ = 175°C, IF = 50 A 50 40 30 TJ = 25°C, IF = 50 A 20 10 TJ = 175°C, IF = 50 A 6 Figure 19. trr vs. diF/dt (VR = 400 V) 100 300 500 700 900 1100 IF = 75 A 3.0 IF = 50 A 2.5 2.0 IF = 25 A 1.5 1.0 −75 −50 −25 1300 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/m) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ 250 VCE = 600 V, RG = 10 W, VGE = 0/15 V 200 Ipk (A) Irm, REVERSE RECOVERY CURRENT (A) 100 50 7 Qrr, REVERSE RECOVERY CHARGE (mC) trr, REVERSE RECOVERY TIME (ns) 450 TC = 80°C 150 100 TC = 110°C 50 0 0.01 0.1 1 10 100 FREQUENCY (kHz) Figure 23. Collector Current vs. Switching Frequency www.onsemi.com 6 1000 NGTB50N120FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.28 50% Duty Cycle 0.1 0.01 20% 10% 5% R1 Junction R2 Rn Case 2% C1 0.001 1E−05 Ci (J/°C) 0.006487 0.023120 0.061163 0.092651 1.252250 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 1E−06 Cn C2 Ri (°C/W) 0.048747 0.043252 0.051703 0.107932 0.025253 0.0001 0.001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 24. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.50 50% Duty Cycle 0.1 20% 10% 5% 2% 0.01 0.001 1E−06 Junction R1 R2 Rn C1 C2 Cn Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1E−05 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 25. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (°C/W) Ci (J/°C) 0.007703 0.010613 0.010097 0.032329 0.046791 0.044179 0.083870 0.000130 0.000942 0.003132 0.003093 0.006758 0.022635 0.119232 0.044938 0.703706 0.217376 0.460033 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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