NGTB50N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
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Features
•
•
•
•
•
•
50 A, 600 V
VCEsat = 1.80 V
EOFF = 0.46 mJ
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
This is a Pb−Free Device
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
C
MARKING DIAGRAM
Diode Pulsed Current
TPULSE Limited by TJ Max
IFM
200
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
200
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
$20
$30
PD
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
W
417
208
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
December, 2016 − Rev. 5
50N60FL2
AYWWG
V
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
© Semiconductor Components Industries, LLC, 2016
E
A
100
50
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
TO−247
CASE 340AL
G
100
50
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB50N60FL2WG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB50N60FL2W/D
NGTB50N60FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.36
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.60
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 175°C
VCEsat
1.50
−
1.80
2.19
2.00
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.5
4.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
5328
−
pF
Coes
−
252
−
Cres
−
148
−
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
Qg
−
220
−
Qge
−
52
−
Qgc
−
116
−
td(on)
−
100
−
tr
−
47
−
td(off)
−
237
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
tf
−
67
−
Eon
−
1.50
−
Eoff
−
0.46
−
Total switching loss
Ets
−
1.96
−
Turn−on delay time
td(on)
−
90
−
tr
−
49
−
td(off)
−
245
−
tf
−
96
−
Eon
−
1.90
−
Turn−off switching loss
Eoff
−
0.83
−
Total switching loss
Ets
−
2.73
−
VF
−
−
2.10
2.20
2.90
−
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 175°C
TJ = 25°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
V
trr
−
94
−
ns
Qrr
−
0.45
−
mC
Irrm
−
8
−
A
trr
−
170
−
ns
Qrr
−
1.40
−
mC
Irrm
−
13
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N60FL2WG
TYPICAL CHARACTERISTICS
160
TJ = 25°C
VGE = 15 V
to 20 V
140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
13 V
120
100
80
11 V
60
10 V
40
7V
20
9V
8V
0
0
1
2
3
4
7
6
80
11 V
60
10 V
40
9V
20
8V
7V
0
8
1
2
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (A)
TJ = −55°C
120
100
80
11 V
60
10 V
40
7V
20
9V
8V
1
2
3
4
5
8
160
13 V
140
TJ = 25°C
120
TJ = 150°C
100
80
60
40
20
0
6
7
8
0
2
4
6
14
12
10
8
16
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.00
10,000
18
Cies
IC = 75 A
2.50
IC = 50 A
2.00
IC = 25 A
1.50
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
13 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 17 V
to 20 V
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 V
to 15 V
0
120
15 V
0
5
160
140
TJ = 150°C
140
1000
Coes
100
Cres
0.50
0
−75 −50 −25
0
25
50
10
75 100 125 150 175 200
TJ = 25°C
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB50N60FL2WG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
50
40
30
20
TJ = 150°C
10
TJ = 25°C
0
0
0.5
1.0
1.5
2.5
3.0
3.5
10
8
6
4
VCE = 480 V
VGE = 15 V
IC = 50 A
2
0
4.0
50
100
200
150
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1000
VCE = 400 V
VGE = 15 V
2.5
IC = 50 A
Rg = 10 W
2.0
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
12
0
2.0
3.0
Eon
1.5
Eoff
1.0
td(off)
td(on)
100
tf
tr
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0.5
0
10
0
20
40
60
80
100
120
140
0
160
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
160
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
5
SWITCHING TIME (ns)
6
SWITCHING LOSS (mJ)
14
Eon
4
3
Eoff
2
td(off)
tf
100 td(on)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tr
1
0
15
25
35
45
55
65
75
85
95
10
105
15
25
35
45
55
65
75
85
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
95
105
NGTB50N60FL2WG
TYPICAL CHARACTERISTICS
10,000
14
SWITCHING LOSS (mJ)
12
10
SWITCHING TIME (ns)
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 50 A
Eon
8
6
Eoff
4
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 50 A
1000
td(off)
100
tf
td(on)
2
0
10
5
15
25
35
45
55
65
75
5
85
25
35
45
55
65
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
75
85
SWITCHING TIME (ns)
1000
VGE = 15 V
TJ = 150°C
IC = 75 A
Rg = 10 W
5
SWITCHING LOSS (mJ)
15
Figure 13. Switching Loss vs. Rg
6
Eon
4
3
Eoff
2
td(off)
td(on)
100
tf
tr
VGE = 15 V
TJ = 150°C
IC = 75 A
Rg = 10 W
1
0
150 200 250 300
10
350 400
450 500 550 600 650
150 200 250 300 350 400 450 500 550 600 650
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
tr
100
50 ms
dc operation
10
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
1 ms
100
10
VGE = 15 V, TC = 125°C
100
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB50N60FL2WG
Qrr, REVERSE RECOVERY CHARGE (mC)
TYPICAL CHARACTERISTICS
140
TJ = 175°C, IF = 50 A
120
100
80
TJ = 25°C, IF = 50 A
60
40
Irm, REVERSE RECOVERY CURRENT (A)
100
300
500
700
900
1100
3.0
2.5
TJ = 175°C, IF = 50 A
2.0
1.5
1.0
TJ = 25°C, IF = 50 A
0.5
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
40
1100
2.75
TJ = 175°C, IF = 50 A
VF, FORWARD VOLTAGE (V)
trr, REVERSE RECOVERY TIME (ns)
160
30
20
TJ = 25°C, IF = 50 A
10
0
100
300
500
700
900
1100
2.50
IF = 60 A
2.25
2.00
IF = 50 A
1.75
IF = 25 A
1.50
1.25
1.00
−75 −50 −25
0
25
50
75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/ms)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
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6
NGTB50N60FL2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.36
50% Duty Cycle
0.1 20%
10%
5%
R1
Junction
R2
Rn
Case
2%
0.01
C1
0.001
Cn
C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
Ri (°C/W)
Ci (J/°C)
0.020315
0.034265
0.021803
0.054410
0.113326
0.040172
0.004922
0.009229
0.045865
0.058120
0.088241
0.787180
0.0001
0.000001
0.00001
0.001
0.0001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 23. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.60
50% Duty Cycle
20%
0.1 10%
5%
Junction R1
R2
Rn
C1
C2
Cn
2%
0.01
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance
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7
Case
Ri (°C/W)
Ci (J/°C)
0.007969
0.010774
0.010678
0.028006
0.045699
0.104967
0.059973
0.066388
0.134301
0.000125
0.000928
0.002961
0.003571
0.006920
0.009527
0.052729
0.150629
0.235463
0.152890
0.654064
0.1
1
NGTB50N60FL2WG
Figure 25. Collector Current vs. Switching Frequency
Figure 26. Test Circuit for Switching Characteristics
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8
NGTB50N60FL2WG
Figure 27. Definition of Turn On Waveform
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9
NGTB50N60FL2WG
Figure 28. Definition of Turn Off Waveform
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
SCALE 1:1
E
E2/2
D
SEATING
PLANE
Q
2X
2
M
B A
M
NOTE 6
S
NOTE 3
1
0.635
P
A
E2
NOTE 4
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
F
L
L1
P
Q
S
3
L1
F
NOTE 5
L
2X
B
A
NOTE 4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.07
1.33
1.65
2.35
2.60
3.40
0.45
0.68
20.80
21.34
15.50
16.25
4.32
5.49
5.45 BSC
2.655
--19.80
20.80
3.81
4.32
3.55
3.65
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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