NGTB50N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
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Features
•
•
•
•
•
•
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
50 A, 600 V
VCEsat = 1.65 V
EOFF = 0.6 mJ
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
G
ABSOLUTE MAXIMUM RATINGS
Rating
E
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
100
50
A
100
50
Diode Pulsed Current
TPULSE Limited by TJ Max
IFM
200
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
200
A
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
$20
V
V
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
$30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
January, 2013 − Rev. 1
C
TO−247
CASE 340L
STYLE 4
E
MARKING DIAGRAM
50N60FL
AYWWG
W
223
89
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
G
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB50N60FLWG
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB50N60FLW/D
NGTB50N60FLWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.56
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.74
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 150°C
VCEsat
1.40
−
1.65
1.85
1.90
−
V
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.5
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7500
−
pF
Coes
−
300
−
Cres
−
190
−
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
Qg
−
310
−
Qge
−
60
−
Qgc
−
150
−
td(on)
−
116
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
tr
−
43
−
td(off)
−
292
−
ns
tf
−
78
−
Eon
−
1.1
−
Eoff
−
0.6
−
Total switching loss
Ets
−
1.7
−
Turn−on delay time
td(on)
−
110
−
tr
−
45
−
td(off)
−
300
−
tf
−
105
−
Eon
−
1.4
−
Turn−off switching loss
Eoff
−
1.1
−
Total switching loss
Ets
−
2.5
−
VF
1.55
−
1.85
1.85
2.1
−
V
trr
−
85
−
ns
Qrr
−
0.40
−
mC
Irrm
−
8
−
A
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 150°C
TJ = 25°C
IF = 50 A, VR = 200 V
diF/dt = 200 A/ms
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2
NGTB50N60FLWG
TYPICAL CHARACTERISTICS
300
TJ = 25°C
VGE = 17 V to 13 V
200
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
11 V
150
10 V
100
9V
50
7V
0
0
8V
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
250
11 V
150
10 V
100
9V
50
8V
7V
0
Figure 1. Output Characteristics
VGE = 17 V to 13 V
11 V
150
10 V
100
7V
50
0
9V
8V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
180
160
100
80
60
40
20
0
16
100000
IC = 100 A
2.00
IC = 50 A
1.50
IC = 25 A
1.00
IC = 5 A
CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
4
8
12
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.00
10000
Cies
1000
Coes
100
Cres
0.50
0.00
−75
TJ = 150°C
120
0
8
TJ = 25°C
140
Figure 3. Output Characteristics
2.50
8
200
TJ = −55°C
200
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
VGE = 17 V to 13 V
200
0
8
TJ = 150°C
−25
25
75
125
TJ, JUNCTION TEMPERATURE (°C)
175
10
0
Figure 5. VCE(sat) vs. TJ
30 40
50 60 70
80 90 100
10 20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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3
NGTB50N60FLWG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
120
IF, FORWARD CURRENT (A)
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0
0.5
1
1.5
2
2.5
VF, FORWARD VOLTAGE (V)
3
15
10
5
0
3.5
VCE = 480 V
50
0
Figure 7. Diode Forward Characteristics
td(off)
Eon
1.2
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
350
1000
1.4
1
Eoff
0.8
0.6
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0.4
0.2
0
0
20
40
60
100
120 140
80
TJ, JUNCTION TEMPERATURE (°C)
tf
tr
10
1
160
td(on)
100
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0
Figure 9. Switching Loss vs. Temperature
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
3.5
3
2.5
Eon
1
tf
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.5
20
160
td(off)
1.5
8
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
1000
Eoff
2
20
Figure 10. Switching Time vs. Temperature
SWITCHING TIME (ns)
4.5
SWITCHING LOSS (mJ)
300
Figure 8. Typical Gate Charge
1.6
0
100
150
200
250
QG, GATE CHARGE (nC)
32
44
56
68
80
IC, COLLECTOR CURRENT (A)
92
1
104
8
Figure 11. Switching Loss vs. IC
20
32
44
56
68
80
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
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4
92
104
NGTB50N60FLWG
TYPICAL CHARACTERISTICS
SWITCHING LOSS (mJ)
6
5
10000
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
td(off)
Eon
SWITCHING TIME (ns)
7
4
Eoff
3
2
1000
td(on)
100
tf
tr
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
10
1
0
5
15
25
35
45
55
65
75
1
5
85
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
Eon
225
275
325
375
425 475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
85
225
275
325
375
425 475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
575
tf
tr
10
1
175
575
VGE = 15 V
IC = 50 A
Rg = 10 W
TJ = 150°C
Figure 16. Switching Time vs. VCE
1000
1000
50 ms
100
dc operation
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
75
td(on)
100
Figure 15. Switching Loss vs. VCE
0.01
1
65
td(off)
0.6
0.1
55
1000
VGE = 15 V
IC = 50 A
Rg = 10 W
TJ = 150°C
1.2
1
45
Figure 14. Switching Time vs. RG
Eoff
10
35
Figure 13. Switching Loss vs. RG
1.8
0
175
25
RG, GATE RESISTOR (W)
3
2.4
15
RG, GATE RESISTOR (W)
100 ms
1 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
100
10
1
1000
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB50N60FLWG
TYPICAL CHARACTERISTICS
250
Ipk (A)
200
80°C
150
100
50
0
110°C
80°C
110°C
VCE = 400 V, TJ ≤ 150°C
Rgate = 10 W, VGE = 0/15 V,
Tcase = 80 or 110°C
(as noted), D = 0.5
0.01
0.1
1
10
FREQUENCY (kHz)
100
1000
Figure 19. Collector Current vs. Switching Frequency
1
50% Duty Cycle
RqJC = 0.56
20%
R(t) (°C/W)
0.1
10%
Junction R1
5%
1%
C1
C2
Cn
Ri (°C/W)
Case
0.00001
ti (sec)
0.02087
0.05041
0.07919
0.11425
0.19393
1.0E−4
5.48E−5
0.002
0.03
0.1
0.09951
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R2
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 20. IGBT Transient Thermal Impedance
1
50% Duty Cycle
RqJC = 0.74
R(t) (°C/W)
20%
0.1 10%
R2
1%
C1
Case
0.00001
Ri (°C/W)
0.07958
0.13798
0.18744
0.23523
0.09951
Cn
C2
ti (sec)
4.89E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R1
Junction
5%
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 21. Diode Transient Thermal Impedance
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6
10
100
1000
NGTB50N60FLWG
Figure 22. Test Circuit for Switching Characteristics
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7
NGTB50N60FLWG
Figure 23. Definition of Turn On Waveform
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8
NGTB50N60FLWG
Figure 24. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
STYLE 1:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
STYLE 5:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 6:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1.
2.
3.
4.
98ASB15080C
TO−247
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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