NGTB50N60FWG

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • • • • • Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode 5 ms Short−Circuit Capability These are Pb−Free Devices 50 A, 600 V VCEsat = 1.45 V EOFF = 1.20 mJ C Typical Applications • Solar Inverters • Uninterruptible Power Supples (UPS) • Motor Drives G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM A 100 50 200 A Diode Forward Current @ TC = 25°C @ TC = 100°C IF Diode Pulsed Current Tpulse limited by TJmax IFM 200 A Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage Transient Gate−Emitter Voltage VGE $20 $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C G C TO−247 CASE 340L STYLE 4 E A 100 50 MARKING DIAGRAM 50N60F AYWWG W 223 89 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G ORDERING INFORMATION Device NGTB50N60FWG © Semiconductor Components Industries, LLC, 2012 December, 2012 − Rev. 1 1 = Assembly Location = Year = Work Week = Pb−Free Package Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB50N60FW/D NGTB50N60FWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.56 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.74 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 150°C VCEsat 1.25 − 1.45 1.7 1.7 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.5 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7300 − pF Coes − 275 − Cres − 170 − Qg − 310 − Qge − 60 − Qgc − 150 − td(on) − 117 − tr − 43 − td(off) − 285 − tf − 105 − Eon − 1.1 − Turn−off switching loss Eoff − 1.2 − Total switching loss Ets − 2.3 − Turn−on delay time td(on) − 112 − Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V Rise time tr − 45 − td(off) − 300 − tf − 214 − Eon − 1.4 − Turn−off switching loss Eoff − 2.0 − Total switching loss Ets − 3.4 − Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V http://onsemi.com 2 ns mJ ns mJ NGTB50N60FWG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 150°C VF 1.4 − 1.95 2.1 2.5 − V trr − 77 − ns Qrr − 0.4 − mC Irrm − 8 − A DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 25°C IF = 50 A, VR = 200 V diF/dt = 200 A/ms http://onsemi.com 3 NGTB50N60FWG TYPICAL CHARACTERISTICS 250 TJ = 25°C 200 11 V 150 10 V 100 9V 50 7V 0 1 2 3 4 8V 5 6 10 V 100 9V 50 8V 7V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 11 V 150 10 V 100 50 9V 7 V to 8 V 1 2 3 4 5 6 7 8 200 TJ = −40°C VGE = 17 V to 13 V 0 11 V 150 VCE, COLLECTOR−EMITTER VOLTAGE (V) 200 0 200 0 8 VGE = 17 V to 13 V TJ = 150°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 250 IC, COLLECTOR CURRENT (A) 7 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE = 17 V to 13 V 180 160 TJ = 25°C 140 TJ = 150°C 120 100 80 60 40 20 0 8 0 4 8 16 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10,000 Cies IC = 100 A 2.5 2.0 IC = 50 A 1.5 IC = 10 A 1.0 IC = 5 A CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 250 1000 Coes 100 Cres 0.5 0 −75 −25 25 75 125 175 10 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 4 100 NGTB50N60FWG TYPICAL CHARACTERISTICS 20 TJ = 25°C 80 TJ = 150°C 60 40 20 0 SWITCHING LOSS (mJ) 2.5 0.5 1.0 1.5 2.0 3.0 3.5 3 Eoff 20 40 60 80 100 120 140 200 250 300 tf tr 10 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 tf Eon 2 1.5 1 td(off) 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.5 20 32 350 td(on) 100 1 160 Eoff 8 150 TJ, JUNCTION TEMPERATURE (°C) 2.5 0 100 td(off) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 3.5 50 0 1000 0.5 4 0 Figure 8. Typical Gate Charge 1.0 4.5 5 Figure 7. Diode Forward Characteristics Eon 0 10 QG, GATE CHARGE (nC) 1.5 0 VCE = 480 V 15 VF, FORWARD VOLTAGE (V) VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 2 2.5 SWITCHING TIME (ns) 0 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 100 SWITCHING TIME (ns) IF, FORWARD CURRENT (A) 120 44 56 68 80 92 1 104 8 20 32 44 56 68 80 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 5 92 104 NGTB50N60FWG TYPICAL CHARACTERISTICS 6 SWITCHING LOSS (mJ) 10,000 VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 5 Eon SWITCHING TIME (ns) 7 4 3 Eoff 2 1000 td(off) 100 td(on) tf tr VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 10 1 5 3 25 35 45 55 65 75 1 85 45 55 65 75 275 85 1000 td(off) Eoff 0.6 325 375 425 475 525 tf td(on) 100 tr 10 VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C 1 175 575 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 575 1000 100 ms 100 1 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 35 Figure 14. Switching Time vs. Rg 1.2 50 ms dc operation 10 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 25 Figure 13. Switching Loss vs. Rg Eon 225 15 Rg, GATE RESISTOR (W) 1.8 0 175 5 Rg, GATE RESISTOR (W) VGE = 15 V IC = 50 A Rg = 10 W TJ = 150°C 2.4 SWITCHING LOSS (mJ) 15 SWITCHING TIME (ns) 0 1 10 100 1000 100 10 VGE = 15 V, TC = 125°C 1 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 6 NGTB50N60FWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle RqJC = 0.56 20% R(t) (°C/W) 0.1 10% Junction R1 5% 1% C1 C2 Cn Ri (°C/W) Case 0.00001 ti (sec) 0.02087 0.05041 0.07919 0.11425 0.19393 1.0E−4 6.84E−5 0.002 0.03 0.1 0.09951 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 1 50% Duty Cycle RqJC = 0.74 R(t) (°C/W) 20% 0.1 10% R2 1% C1 Case 0.00001 Ri (°C/W) 0.07958 0.13798 0.18744 0.23523 0.09951 Cn C2 ti (sec) 4.89E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R1 Junction 5% 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 7 10 100 1000 NGTB50N60FWG Figure 22. Definition of Turn On Waveform http://onsemi.com 8 NGTB50N60FWG Figure 23. Definition of Turn Off Waveform http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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