DATA SHEET
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IGBT
NGTB50N60L2WG
50 A, 600 V
VCEsat = 1.50 V
Eoff = 0.6 mJ
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
C
Features
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
G
E
Typical Applications
• Motor Drive Inverters
• Industrial Switching
• Welding
G
C
E
TO−247
CASE 340AM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter Voltage
Rating
VCES
600
V
Collector Current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
100
50
50N60L2
AYWWG
A
100
50
Diode Pulsed Current
TPULSE Limited by TJ Max
IFM
200
A
Pulsed Collector Current, Tpulse
Limited by TJmax
ICM
200
A
Short−circuit Withstand Time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter Voltage
VGE
±20
V
V
Transient Gate−emitter Voltage
(TPULSE = 5 ms, D < 0.10)
MARKING DIAGRAM
±30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
W
Operating Junction Temperature
Range
TJ
−55 to +175
°C
Storage Temperature Range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
500
250
50N60L2 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB50N60L2WG
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
October, 2021 − Rev. 5
1
Publication Order Number:
NGTB50N60L2W/D
NGTB50N60L2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.28
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.62
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 175°C
VCEsat
1.30
−
1.50
1.85
1.80
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 175°C
ICES
−
−
−
1.0
0.1
4.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
7500
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
300
−
Cres
−
190
−
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
Qg
−
310
−
Qge
−
60
−
Qgc
−
150
−
td(on)
−
110
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
tr
−
48
−
td(off)
−
270
−
tf
−
70
−
Eon
−
1.25
−
Turn−off switching loss
Eoff
−
0.6
−
Total switching loss
Ets
−
1.85
−
Turn−on delay time
td(on)
−
115
−
tr
−
50
−
td(off)
−
280
−
Rise time
Turn−off delay time
Fall time
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
tf
−
100
−
Eon
−
1.6
−
Turn−off switching loss
Eoff
−
1.0
−
Total switching loss
Ets
−
2.6
−
VF
1.40
−
1.70
2.40
2.50
−
Turn−on switching loss
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 175°C
TJ = 25°C
IF = 50 A, VR = 200 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
V
trr
−
67
−
ns
Qrr
−
0.30
−
mC
Irrm
−
7.4
−
A
trr
−
143
−
ns
Qrr
−
1.40
−
mC
Irrm
−
15
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
140
11 V
120
100
10 V
80
60
40
9V
20
8V
7V
7
1
2
3
4
5
140
TJ = 150°C
120
11 V
100
10 V
80
60
9V
40
8V
7V
20
0
1
2
3
4
5
7
6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
TJ = −55°C
11 V
140
120
100
10 V
80
60
7V
40
9V
20
0
8V
1
2
3
4
5
6
7
140
120
100
80
60
40
TJ = 150°C
20
TJ = 25°C
0
8
0
1
2
3
4
5
6
7
8
9
10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
2.50
100,000
TJ = 25°C
IC = 75 A
2.00
IC = 50 A
1.50
IC = 25 A
1.00
0.50
0
−75 −50 −25
8
160
160
0
13 V
160
0
8
VGE = 20 V
to 15 V
180
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 V
to 13 V
180
6
IC, COLLECTOR CURRENT (A)
0
200
IC, COLLECTOR CURRENT (A)
TJ = 25°C
160
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
200
VGE = 20 V
to 13 V
180
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
200
0
25
50
1000
Coes
100
Cres
10
1
75 100 125 150 175 200
Cies
10,000
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
50
40
30
20
TJ = 150°C
10
0
TJ = 25°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
8
6
4
VCE = 400 V
VGE = 15 V
IC = 50 A
2
0
0
50
100
250
200
150
QG, GATE CHARGE (nC)
350
1000
Eon
1.4
1.2
1.0
Eoff
0.8
0.6
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0.4
0.2
0
20
40
60
80
100
120
140
td(off)
td(on)
100
tf
tr
10
160
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
160
1000
3.5
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2.5
Eon
SWITCHING TIME (ns)
3.0
2.0
Eoff
1.5
1.0
td(off)
tf
100
td(on)
tr
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.5
0
300
Figure 8. Typical Gate Charge
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
10
VF, FORWARD VOLTAGE (V)
1.6
SWITCHING LOSS (mJ)
12
Figure 7. Diode Forward Characteristics
1.8
0
VCE = 400 V
14
5
15
25
35
45
55
65
75
85
10
95
5
15
25
35
45
55
65
75
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
85
95
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 50 A
SWITCHING LOSS (mJ)
7
6
SWITCHING TIME (ns)
10,000
8
Eon
5
4
3
Eoff
2
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 50 A
1000
td(on)
100
tf
tr
1
0
5
15
25
35
45
55
65
75
10
85
25
35
45
55
65
75
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
VGE = 15 V
TJ = 150°C
IC = 50 A
Rg = 10 W
2.5
2.0
Eon
1.5
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
15
85
1000
Eoff
1.0
td(off)
td(on)
tf
100
tr
VGE = 15 V
TJ = 150°C
IC = 50 A
Rg = 10 W
0.5
0
150 200
250
300
350
400
450
500
550
10
600
150 200 250
300
350
400
450
500
550 600
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
5
Figure 13. Switching Loss vs. Rg
3.0
50 ms
100
100 ms
dc operation
10
1 ms
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
td(off)
1
10
100
100
10
VGE = 15 V, TC = 125°C
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
Qrr, REVERSE RECOVERY CHARGE (mC)
trr, REVERSE RECOVERY TIME (ns)
160
140
TJ = 175°C, IF = 50 A
120
TJ = 25°C, IF = 50 A
80
60
40
100
300
500
700
900
1100
1300
1.5
1.0
TJ = 25°C, IF = 50 A
0.5
0
100
300
500
700
900
1100
diF/dt, DIODE CURRENT SLOPE (A/m)
diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 20. Qrr vs. diF/dt (VR = 400 V)
50
1300
3.5
40
TJ = 175°C, IF = 50 A
30
20
TJ = 25°C, IF = 50 A
10
0
TJ = 175°C, IF = 50 A
2.0
Figure 19. trr vs. diF/dt (VR = 400 V)
VF, FORWARD VOLTAGE (V)
Irm, REVERSE RECOVERY CURRENT (A)
100
2.5
100
300
500
700
900
1100
3.0
IF = 75 A
2.5
IF = 50 A
2.0
IF = 25 A
1.5
1.0
−75 −50 −25
1300
0
25
50
75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/m)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt (VR = 400 V)
Figure 22. VF vs. TJ
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6
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.282
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
R1
Junction
C1
0.001
0.0001
R2
Case
Cn
C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Rn
0.00001
0.001
0.0001
0.01
Ri (°C/W)
Ci (J/°C)
0.026955
0.024252
0.022476
0.055395
0.112157
0.040934
0.003710
0.013039
0.044492
0.057085
0.089161
0.772537
0.1
1
ON−PULSE WIDTH (s)
Figure 23. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.622
50% Duty Cycle
20%
0.1 10%
5%
Junction R1
R2
Rn
C1
C2
Cn
2%
0.01
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance
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7
Case
Ri (°C/W)
Ci (J/°C)
0.007983
0.010584
0.011330
0.026752
0.047379
0.103276
0.061288
0.065591
0.134666
0.152791
0.000125
0.000945
0.002791
0.003738
0.006674
0.009683
0.051597
0.152460
0.234823
0.654488
0.1
1
NGTB50N60L2WG
Figure 25. Test Circuit for Switching Characteristics
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8
NGTB50N60L2WG
Figure 26. Definition of Turn On Waveform
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NGTB50N60L2WG
Figure 27. Definition of Turn Off Waveform
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AM
ISSUE C
DATE 07 SEP 2021
GENERIC
MARKING DIAGRAMS*
XXXXXXXXX
AYWWG
XXXXXXXXX
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON77284F
TO−247
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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