DATA SHEET
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IGBT - Field Stop II
NGTB50N65FL2WG
50 A, 650 V
VCEsat = 1.80 V
Eoff = 0.46 mJ
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
G
Features
•
•
•
•
•
•
C
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
This is a Pb−Free Device
E
G
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
E
TO−247
CASE 340AM
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Rating
C
Symbol
Value
Unit
Collector−emitter Voltage
VCES
650
V
Collector Current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
100
50
A
100
50
Diode Pulsed Current
TPULSE Limited by TJ Max
IFM
200
A
Pulsed Collector Current, Tpulse
Limited by TJmax
ICM
200
A
Short−circuit Withstand Time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter Voltage
VGE
±20
V
V
Transient Gate−emitter Voltage
(TPULSE = 5 ms, D < 0.10)
50N65FL2
AYWWG
±30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
W
Operating Junction Temperature
Range
TJ
−55 to +175
°C
Storage Temperature Range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
417
208
50N65FL2 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB50N65FL2WG
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
October, 2021 − Rev. 6
1
Publication Order Number:
NGTB50N65FL2W/D
NGTB50N65FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.36
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.60
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 175°C
VCEsat
1.50
−
1.80
2.19
2.00
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 150°C
ICES
−
−
−
−
0.5
4.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
5328
−
pF
Coes
−
252
−
Cres
−
148
−
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
Qg
−
220
−
Qge
−
52
−
Qgc
−
116
−
td(on)
−
100
−
tr
−
47
−
td(off)
−
237
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
tf
−
67
−
Eon
−
1.50
−
Eoff
−
0.46
−
Total switching loss
Ets
−
1.96
−
Turn−on delay time
td(on)
−
90
−
tr
−
49
−
td(off)
−
245
−
tf
−
96
−
Eon
−
1.90
−
Turn−off switching loss
Eoff
−
0.83
−
Total switching loss
Ets
−
2.73
−
VF
−
−
2.10
2.20
2.90
−
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 175°C
TJ = 25°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
V
trr
−
94
−
ns
Qrr
−
0.45
−
mC
Irrm
−
8
−
A
trr
−
170
−
ns
Qrr
−
1.40
−
mC
Irrm
−
13
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N65FL2WG
TYPICAL CHARACTERISTICS
13 V
120
100
80
11 V
60
10 V
40
7V
20
9V
8V
0
1
2
3
4
5
IC, COLLECTOR CURRENT (A)
VGE = 17 V
to 20 V
100
13 V
80
11 V
60
10 V
40
9V
20
8V
7V
0
1
2
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
TJ = −55°C
100
80
11 V
60
10 V
40
7V
20
9V
8V
1
2
3
4
5
8
160
13 V
VGE = 20 V
to 15 V
0
15 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
120
0
8
TJ = 150°C
140
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
140
7
6
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
140
160
TJ = 25°C
VGE = 15 V
to 20 V
140
TJ = 25°C
120
TJ = 150°C
100
80
60
40
20
0
6
7
8
0
2
4
6
14
12
10
8
16
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.00
10,000
18
Cies
IC = 75 A
2.50
IC = 50 A
2.00
IC = 25 A
1.50
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
160
1000
Coes
100
Cres
0.50
0
−75 −50 −25
0
25
50
10
75 100 125 150 175 200
TJ = 25°C
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB50N65FL2WG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
50
40
30
20
TJ = 150°C
10
0
TJ = 25°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
8
6
4
VCE = 480 V
VGE = 15 V
IC = 50 A
2
0
0
50
100
200
150
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
SWITCHING TIME (ns)
1000
VCE = 400 V
VGE = 15 V
2.5
IC = 50 A
Rg = 10 W
2.0
Eon
1.5
Eoff
1.0
td(off)
td(on)
100
tf
tr
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0.5
0
0
6
20
40
60
80
100
120
4
10
160
0
20
40
60
80
100
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
Eon
2
td(off)
tf
100 td(on)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tr
1
25
35
160
1000
Eoff
15
140
TJ, JUNCTION TEMPERATURE (°C)
3
0
120
TJ, JUNCTION TEMPERATURE (°C)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
5
140
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
12
Figure 7. Diode Forward Characteristics
3.0
SWITCHING LOSS (mJ)
14
45
55
65
75
85
95
10
105
15
25
35
45
55
65
75
85
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
95
105
NGTB50N65FL2WG
TYPICAL CHARACTERISTICS
14
10
SWITCHING TIME (ns)
12
SWITCHING LOSS (mJ)
10,000
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 50 A
Eon
8
6
Eoff
4
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 50 A
1000
td(off)
100
tf
td(on)
2
0
5
15
25
35
45
55
65
75
10
85
45
55
65
75
85
1000
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
35
Rg, GATE RESISTOR (W)
Eon
Eoff
2
td(off)
td(on)
100
tf
350 400
10
450 500 550 600 650
tr
VGE = 15 V
TJ = 150°C
IC = 75 A
Rg = 10 W
1
0
150 200 250 300
150 200 250 300 350 400 450 500 550 600 650
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
100
dc operation
50 ms
10
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
1
10
1 ms
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
25
Figure 14. Switching Time vs. Rg
3
0.1
15
Rg, GATE RESISTOR (W)
VGE = 15 V
TJ = 150°C
IC = 75 A
Rg = 10 W
4
5
Figure 13. Switching Loss vs. Rg
6
5
tr
100
10
1
1000
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB50N65FL2WG
Qrr, REVERSE RECOVERY CHARGE (mC)
TYPICAL CHARACTERISTICS
140
TJ = 175°C, IF = 50 A
120
100
80
TJ = 25°C, IF = 50 A
60
40
100
300
500
700
900
1100
2.5
TJ = 175°C, IF = 50 A
2.0
1.5
1.0
TJ = 25°C, IF = 50 A
0.5
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
40
1100
2.75
TJ = 175°C, IF = 50 A
30
20
TJ = 25°C, IF = 50 A
10
0
3.0
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Irm, REVERSE RECOVERY CURRENT (A)
trr, REVERSE RECOVERY TIME (ns)
160
100
300
500
700
900
1100
2.50
IF = 60 A
2.25
2.00
IF = 50 A
1.75
IF = 25 A
1.50
1.25
1.00
−75 −50 −25
0
25
50
75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/ms)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
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NGTB50N65FL2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.36
50% Duty Cycle
0.1 20%
10%
5%
R1
Junction
R2
Case
2%
0.01
C1
0.001
0.000001
Cn
C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
Rn
0.00001
0.001
0.0001
0.01
Ri (°C/W)
Ci (J/°C)
0.020315
0.034265
0.021803
0.054410
0.113326
0.040172
0.004922
0.009229
0.045865
0.058120
0.088241
0.787180
0.1
1
ON−PULSE WIDTH (s)
Figure 23. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.60
50% Duty Cycle
20%
0.1 10%
5%
Junction R1
R2
Rn
C1
C2
Cn
2%
0.01
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance
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7
Case
Ri (°C/W)
Ci (J/°C)
0.007969
0.010774
0.010678
0.028006
0.045699
0.104967
0.059973
0.066388
0.134301
0.000125
0.000928
0.002961
0.003571
0.006920
0.009527
0.052729
0.150629
0.235463
0.654064
0.152890
0.1
1
NGTB50N65FL2WG
Figure 25. Collector Current vs. Switching Frequency
Figure 26. Test Circuit for Switching Characteristics
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8
NGTB50N65FL2WG
Figure 27. Definition of Turn On Waveform
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NGTB50N65FL2WG
Figure 28. Definition of Turn Off Waveform
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AM
ISSUE C
DATE 07 SEP 2021
GENERIC
MARKING DIAGRAMS*
XXXXXXXXX
AYWWG
XXXXXXXXX
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON77284F
TO−247
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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