NGTB60N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
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60 A, 600 V
VCEsat = 2.0 V
Eoff = 0.60 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are Pb−Free Devices
C
Typical Applications
• Inverter Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
E
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Pulsed collector current, Tpulse
limited by TJmax
ICM
240
A
Diode pulsed current, Tpulse limited
by TJmax
IFM
240
A
Gate−emitter voltage
VGE
$20
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
A
120
60
A
120
60
G
C
TO−247
CASE 340L
STYLE 4
E
MARKING DIAGRAM
V
W
298
119
Operating junction temperature range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
60N60S
AYWWG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB60N60SWG
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB60N60SW/D
NGTB60N60SWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.42
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.00
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 60 A
VGE = 15 V, IC = 60 A, TJ = 150°C
VCEsat
−
−
2.0
2.6
2.5
−
V
VGE = VCE, IC = 150 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
4112
−
pF
Coes
−
169
−
Cres
−
107
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
nC
Qg
173
Qge
38
Qgc
87
td(on)
87
tr
48
td(off)
180
tf
70
Turn−off switching loss
Eoff
0.60
Turn−on switching loss
Eon
1.41
td(on)
85
tr
50
td(off)
186
tf
91
Eoff
1.11
Eon
1.77
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
VF
1.98
2.10
TJ = 25°C
IF = 30 A, VR = 200 V
diF/dt = 200 A/ms
trr
76
ns
Qrr
291
nc
Irrm
7
A
Gate to emitter charge
VCE = 480 V, IC = 60 A, VGE = 15 V
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 60 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−off switching loss
TJ = 150°C
VCC = 400 V, IC = 60 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn−on switching loss
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
2.30
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB60N60SWG
VGE = 20 − 15 V
13 V
TJ = 25°C
180
160
140
120
11 V
100
80
10 V
60
40
9V
7V
20
0
240
220
200
1
2
3
4
8V
5
6
VGE = 20 − 17 V
200
180
15 V
TJ = 150°C
13 V
160
140
120
100
11 V
80
60
10 V
9V
8V
7V
40
20
0
0
1
2
3
4
5
6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
TJ = −55°C
180
160
140
120
11 V
100
80
60
10 V
40
20
0
9V
7V
1
2
3
4
5
7
240
220
200
TJ = 25°C
180
160
140
TJ = 150°C
120
100
80
60
40
20
0
8V
6
8
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 − 13 V
0
240
220
8
7
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
240
220
200
8
0
2
4
6
8
10
12
16
14
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.5
10,000
Cies
IC = 80 A
3.0
IC = 60 A
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
TYPICAL CHARACTERISTICS
2.5
IC = 40 A
2.0
IC = 20 A
1.5
1000
TJ = 25°C
Coes
100
Cres
1.0
0.5
−75 −50 −25
10
0
25
50
0
75 100 125 150 175 200
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB60N60SWG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
110
IF, FORWARD CURRENT (A)
100
90
TJ = 25°C
80
70
TJ = 150°C
60
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
14
12
10
8
VCE = 480 V
VGE = 15 V
IC = 60 A
6
4
2
0
0
20
40
60
80
100 120 140 160 180 200
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1000
VCE = 400 V
VGE = 15 V
IC = 60 A
Rg = 10 W
2.0
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
16
4.0
3.5
2.5
Eon
1.5
Eoff
1.0
0.5
VCE = 400 V
VGE = 15 V
IC = 60 A
Rg = 10 W
td(off)
td(on)
100
tf
tr
10
0
20
40
60
80
100
120
40
60
80
100
120
140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1000
Eon
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2.0
20
TJ, JUNCTION TEMPERATURE (°C)
3.0
2.5
0
160
140
SWITCHING TIME (ns)
0
SWITCHING LOSS (mJ)
18
Eoff
1.5
1.0
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.5
0
10
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
80
NGTB60N60SWG
TYPICAL CHARACTERISTICS
1000
7
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 60 A
5
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
6
Eon
4
3
Eoff
2
td(off)
td(on)
tf
100
tr
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 60 A
1
0
10
5
15
25
35
45
55
65
75
5
25
35
45
55
65
75
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
85
1000
3.5
VGE = 15 V
TJ = 150°C
IC = 60 A
Rg = 10 W
2.5
Eon
SWITCHING TIME (ns)
3.0
SWITCHING LOSS (mJ)
15
2.0
Eoff
1.5
1.0
VGE = 15 V
TJ = 150°C
IC = 60 A
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.5
10
0
175
225
275
325
375
425
475
525
175 225
575
325
375
425
475
525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
50 ms
100 ms
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase in
temperature
1
1 ms
dc operation
0.1
IC, COLLECTOR CURRENT (A)
1000
IC, COLLECTOR CURRENT (A)
275
100
10
VGE = 15 V
TC = 150°C
1
1
10
100
1000
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. IC vs. VCE
Figure 18. IC vs. VCE
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5
1000
NGTB60N60SWG
TYPICAL CHARACTERISTICS
SQUARE WAVE PEAK R(t) (°C/W)
1
50% Duty Cycle
0.1
0.01
20%
10%
5%
RqJC = 0.42
Junction
2%
R1
C1
0.001
R2
Rn
Case
Cn
C2
Ri (°C/W)
Ci (J/°C)
0.034317
0.069684
0.027029
0.128158
0.002914
0.004538
0.036997
0.024675
0.140642
0.071103
1.610308
0.019638
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 19. IGBT Transient Thermal Impedance
SQUARE WAVE PEAK R(t) (°C/W)
1
50% Duty Cycle
RqJC = 1.00
20%
10%
0.1
Junction R1
R2
Rn
C1
C2
Cn
5%
2%
0.01
Case
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 20. Diode Transient Thermal Impedance
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6
0.1
Ri (°C/W)
Ci (J/°C)
0.015509
0.020310
0.022591
0.050667
0.093366
0.195285
0.133203
0.173839
0.000064
0.000492
0.001400
0.001974
0.003387
0.005121
0.023740
0.057525
0.251384
0.039982
0.125795
2.501137
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
STYLE 1:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
STYLE 5:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 6:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1.
2.
3.
4.
98ASB15080C
TO−247
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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