NGTB75N60SWG

NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 75 A, 600 V VCEsat = 1.70 V EOFF = 1.0 mJ Features • • • • • TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices C Typical Applications • Welding G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF E A 100 75 A 100 75 C Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) G Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C TO−247 CASE 340AL E MARKING DIAGRAM 75N60S AYWWG W 595 265 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G ORDERING INFORMATION Device NGTB75N60SWG © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 1 1 = Assembly Location = Year = Work Week = Pb−Free Package Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB75N60SW/D NGTB75N60SWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.62 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCEsat 1.50 − 1.70 1.85 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − − 0.1 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7500 − pF Coes − 300 − Cres − 190 − Qg − 310 − Qge − 60 − Qgc − 150 − td(on) − 110 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 75 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 48 − td(off) − 270 − tf − 70 − Eon − 1.5 − Eoff − 1.0 − Total switching loss Ets − 2.5 − Turn−on delay time td(on) − 100 − tr − 50 − td(off) − 280 − tf − 100 − Eon − 1.9 − Turn−off switching loss Eoff − 1.8 − Total switching loss Ets − 3.7 − VF 1.70 − 2.20 2.40 2.90 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 75 A Rg = 10 W VGE = 0 V/ 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 75 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 75 A VGE = 0 V, IF = 50 A, TJ = 175°C TJ = 25°C IF = 75 A, VR = 200 V diF/dt = 200 A/ms V trr − 80 − ns Qrr − 0.40 − mC Irrm − 8 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB75N60SWG TYPICAL CHARACTERISTICS 200 VGE = 20 V to 13 V 180 TJ = 25°C 160 140 11 V 120 100 10 V 80 60 40 9V 20 8V 7V 7 0 0 1 2 3 4 5 6 VGE = 20 V to 15 V 180 140 TJ = 150°C 120 11 V 100 10 V 80 60 9V 40 8V 7V 20 0 0 8 1 4 5 6 7 Figure 2. Output Characteristics IF, FORWARD CURRENT (A) Cies 1000 Coes 100 Cres 10 60 50 40 30 20 TJ = 150°C 10 TJ = 25°C 0 10 20 30 40 50 60 70 80 90 100 0 0.5 Figure 3. Typical Capacitance SWITCHING LOSS (mJ) 10 8 6 VCE = 400 V VGE = 15 V IC = 75 A 50 100 150 200 250 2.5 3.5 3.0 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 5 12 0 2.0 4.0 6 14 2 1.5 Figure 4. Diode Forward Characteristics VCE = 400 V 4 1.0 VF, FORWARD VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 16 8 70 1 VGE, GATE−EMITTER VOLTAGE (V) 3 Figure 1. Output Characteristics 10,000 0 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 25°C 0 13 V 160 VCE, COLLECTOR−EMITTER VOLTAGE (V) 100,000 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 300 Eon 4 3 Eoff 2 1 0 350 15 25 35 45 55 65 75 85 QG, GATE CHARGE (nC) IC, COLLECTOR CURRENT (A) Figure 5. Typical Gate Charge Figure 6. Switching Loss vs. IC www.onsemi.com 3 95 105 NGTB75N60SWG TYPICAL CHARACTERISTICS 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 1000 td(off) tf 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 50 ms 100 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 15 25 35 45 55 65 75 85 95 100 ms dc operation 10 105 1 IC, COLLECTOR CURRENT (A) 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Switching Time vs. IC Figure 8. Safe Operating Area SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.282 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% R1 Junction R2 C1 0.001 0.000001 Case Cn C2 Ri (°C/W) Ci (J/°C) 0.026955 0.024252 0.022476 0.055395 0.112157 0.040934 0.003710 0.013039 0.044492 0.057085 0.089161 0.772537 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Rn 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 9. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.622 50% Duty Cycle 20% 0.1 10% 5% Junction R1 R2 Rn C1 C2 Cn 2% 0.01 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 10. Diode Transient Thermal Impedance www.onsemi.com 4 Case Ri (°C/W) Ci (J/°C) 0.007983 0.010584 0.011330 0.026752 0.047379 0.103276 0.061288 0.065591 0.134666 0.152791 0.000125 0.000945 0.002791 0.003738 0.006674 0.009683 0.051597 0.152460 0.234823 0.654488 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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