NGTG15N120FL2WG

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices 15 A, 1200 V VCEsat = 2.0 V Eoff = 0.37 mJ C Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C Operating junction temperature range A 30 15 60 A G C $20 ±30 V W 294 147 TSC 10 ms TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C TO−247 CASE 340AL E MARKING DIAGRAM G15N120FL2 AYWWG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTG15N120FL2WG © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTG15N120FL2W/D NGTG15N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.51 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 15 A VGE = 15 V, IC = 15 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.65 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 0.4 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 2640 − pF Coes − 88 − Cres − 50 − Qg − 109 − Qge − 23 − Qgc − 51 − td(on) − 64 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 15 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15 V* tr − 104 − td(off) − 128 − tf − 173 − Eon − 1.20 − Eoff − 0.37 − Total switching loss Ets − 1.57 − Turn−on delay time td(on) − 62 − Turn−on switching loss Turn−off switching loss Rise time tr − 126 − td(off) − 134 − tf − 262 − Eon − 1.45 − Turn−off switching loss Eoff − 0.76 − Total switching loss Ets − 2.21 − Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15 V* ns mJ ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB15N120FL2WG. http://onsemi.com 2 NGTG15N120FL2WG TYPICAL CHARACTERISTICS 45 TJ = 25°C VGE = 13 V to 20 V 40 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 45 35 11 V 30 25 10 V 20 15 9V 10 8V 7V 5 0 0 1 2 3 4 5 7 6 25 10 V 20 15 9V 10 8V 5 7V 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 35 11 V 30 25 20 10 V 15 10 9V 5 8 45 TJ = −55°C VGE = 20 V to 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 11 V 30 VCE, COLLECTOR−EMITTER VOLTAGE (V) 8V 0 40 35 TJ = 25°C 30 TJ = 150°C 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 9 8 10 11 12 13 14 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 10,000 3.0 Cies IC = 15 A 2.5 C, CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 13 V to 20 V 35 0 45 40 TJ = 150°C 40 2.0 1.5 1.0 1000 100 Coes Cres 10 0.5 TJ = 25°C 0 −75 −50 −25 0 25 50 1 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTG15N120FL2WG TYPICAL CHARACTERISTICS VGE, GATE−EMITTER VOLTAGE (V) 16 14 12 10 8 6 VCE = 600 V VGE = 15 V IC = 15 A 4 2 0 0 20 40 80 60 100 120 QG, GATE CHARGE (nC) Figure 7. Typical Gate Charge 0.9 1000 VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W Eoff 0.7 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 0.8 0.6 0.5 0.4 0.3 VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W 0.2 0.1 0 0 20 40 60 80 100 120 140 td(off) 100 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 8. Switching Loss vs. Temperature Figure 9. Switching Time vs. Temperature 160 1000 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 2.0 Eoff 1.5 1.0 0.5 0 5 10 15 20 25 30 35 40 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W SWITCHING TIME (ns) 2.5 SWITCHING LOSS (mJ) tf tf td(off) 100 45 5 10 15 20 25 30 35 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Switching Loss vs. IC Figure 11. Switching Time vs. IC http://onsemi.com 4 40 45 NGTG15N120FL2WG TYPICAL CHARACTERISTICS 1000 1.6 SWITCHING LOSS (mJ) 1.4 1.2 VCE = 600 V VGE = 15 V TJ = 150°C IC = 15 A SWITCHING TIME (ns) VCE = 600 V VGE = 15 V TJ = 150°C IC = 15 A 1.0 0.8 0.6 0.4 td(off) tf 0.2 0 100 5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 12. Switching Loss vs. Rg Figure 13. Switching Time vs. Rg 1.0 0.8 85 0.7 0.6 0.5 VGE = 15 V TJ = 150°C IC = 15 A Rg = 10 W 0.4 0.3 0.2 VGE = 15 V TJ = 150°C IC = 15 A Rg = 10 W SWITCHING TIME (ns) SWITCHING LOSS (mJ) 75 1000 0.9 tf td(off) 0.1 0 100 350 400 450 500 550 600 650 700 750 350 400 800 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 65 100 10 1 0.1 1 dc operation 50 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 100 ms 10 100 1 ms 1000 100 10 VGE = 15 V, TC = 125°C 1 10k 1 10 100 1000 10k VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTG15N120FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 0.51 20% 0.1 10% 5% 0.01 R1 Junction 2% C1 0.001 0.0001 R2 Case Cn C2 Ri (°C/W) Ci (J/°C) 0.091186 0.066118 0.083897 0.201027 0.003468 0.015124 0.037692 0.049745 0.072182 0.438100 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn 0.00001 0.001 0.0001 0.01 0.1 ON−PULSE WIDTH (s) Figure 18. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response http://onsemi.com 6 1 NGTG15N120FL2WG Figure 19. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTG15N120FL2WG Figure 20. Definition of Turn On Waveform http://onsemi.com 8 NGTG15N120FL2WG Figure 21. Definition of Turn Off Waveform http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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