NGTG15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications.
www.onsemi.com
15 A, 650 V
VCEsat = 1.5 V
Features
•
•
•
•
•
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
5 ms Short Circuit Capability
Excellent Current versus Package Size Performance Density
This is a Pb−Free Device
C
Typical Applications
G
• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
E
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Symbol
Value
Unit
VCES
650
V
IC
C
A
30
15
Pulsed collector current, Tpulse limited by
TJmax
ICM
120
A
Gate−emitter voltage
VGE
$20
Power dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ v +150°C
tSC
5
ms
Operating junction temperature range
TJ
−55 to
+150
°C
Storage temperature range
Tstg
−55 to
+150
°C
Lead temperature for soldering, 1/8” from
case for 5 seconds
TSLD
260
°C
V
G
C
TO−220
CASE 221A
STYLE 9
E
MARKING DIAGRAM
W
117
47
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G15N60S1G
AYWW
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 5
1
Device
Package
Shipping
NGTG15N60S1EG
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NGTG15N60S1E/D
NGTG15N60S1EG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction to case, for IGBT
Rating
RqJC
1.06
°C/W
Thermal resistance junction to ambient
RqJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VCEsat
1.3
1.55
1.5
1.75
1.7
1.95
V
VGE = VCE , IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
10
−
−
200
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Forward Transconductance
VCE = 20 V, IC = 15 A
gfs
−
10.1
−
S
Cies
−
1950
−
Coes
−
70
−
Cres
−
48
−
Qg
−
88
−
Qge
−
16
−
Qgc
−
42
−
td(on)
−
65
−
tr
−
28
−
td(off)
−
170
−
tf
−
140
−
Eon
−
0.550
−
Turn−off switching loss
Eoff
−
0.350
−
Total switching loss
Ets
−
0.900
−
Turn−on delay time
td(on)
−
65
−
tr
−
28
−
td(off)
−
180
−
tf
−
260
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 15 A, VGE = 15 V
Gate to collector charge
pF
nC
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
Eon
−
0.650
−
Turn−off switching loss
Eoff
−
0.600
−
Total switching loss
Ets
−
1.250
−
ns
mJ
ns
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB15N60S1EG.
www.onsemi.com
2
NGTG15N60S1EG
TYPICAL CHARACTERISTICS
60
60
VGE = 17 V to 13 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
VGE = 11 V
50
40
30
20
VGE = 9 V
10
VGE = 7 V
0
0
1
2
3
5
4
6
7
VGE = 11 V
40
30
VGE = 9 V
20
10
VGE = 7 V
8
0
1
2
3
5
4
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
60
VGE = 17 V to 13 V
60
IC, COLLECTOR CURRENT (A)
TJ = −40°C
VGE = 11 V
50
40
30
20
VGE = 9 V
10
VGE = 7 V
0
0
1
2
3
4
5
TJ = 25°C
50
−40°C
150°C
40
30
20
10
0
7
6
0
8
2
4
6
8
10
12
14
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
10,000
IC = 30 A
2.5
2.0
Cies
CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VGE = 17 V to 13 V
0
70
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
50
IC = 15 A
IC = 10 A
1.5
IC = 5 A
1.0
1000
100
Coes
0.5
Cres
0
−50
10
−20
10
40
70
100
130
160
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
www.onsemi.com
3
NGTG15N60S1EG
20
0.7
15
VCES = 480 V
10
5
0.5
Eoff
0.4
0.3
VCE = 400 V
VGE = 15 V
IC = 15 A
RG = 22 W
0.2
0.1
0
0
0
10
20
30
40
50
60
80
70
0
90 100
20
40
60
80
100
120
140
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Switching Loss vs. Temperature
160
1.4
1000
SWITCHING LOSS (mJ)
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
RG = 22 W
1
0
20
40
VCE = 400 V
VGE = 15 V
TJ = 150°C
RG = 22 W
1.2
tf
SWITCHING TIME (ns)
Eon
0.6
SWITCHING LOSS (mJ)
VGE, GATE−TO−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.0
Eon
Eoff
0.8
0.6
0.4
0.2
0
60
80
100
8
140 160
120
12
16
20
24
28
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 9. Switching Time vs. Temperature
Figure 10. Switching Loss vs. IC
32
1.2
1000
Eon
VCE = 400 V
VGE = 15 V
IC = 15 A
TJ = 150°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
tf
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
RG = 22 W
1
8
12
16
20
24
28
0.9
Eoff
0.6
0.3
0
32
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Switching Time vs. RG
www.onsemi.com
4
75
85
NGTG15N60S1EG
TYPICAL CHARACTERISTICS
1.2
1000
VGE = 15 V
IC = 15 A
RG = 22 W
TJ = 150°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
tf
td(off)
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 15 A
TJ = 150°C
1
5
15
25
35
45
55
65
75
Eoff
0.6
0.3
0
85
175
225
275
325
375
425
475
525
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. RG
Figure 14. Switching Loss vs. VCE
575
1000
IC, COLLECTOR CURRENT (A)
1000
tf
td_off
100
td_on
tr
10
VGE = 15 V
IC = 15 A
RG = 22 W
TJ = 150°C
1 ms
175 225
275
325
375
425
475
525
50 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
1
575
100 ms
100
0.01
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
0.9
Eon
100
10
1
0.1
VGE = 15 V, TC = 125°C
0.01
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
Figure 17. Reverse Bias Safe Operating Area
www.onsemi.com
5
1000
NGTG15N60S1EG
TYPICAL CHARACTERISTICS
THERMAL RESPONSE (ZqJC)
10
1
0.1
RqJC = 1.06
50% Duty Cycle
Ri (°C/W)
20%
10%
5%
Junction R1
C1
1%
Single Pulse
0.001
0.000001
Rn
C2
Cn
Case
Ci = ti/Ri
2%
0.01
R2
0.00001
ti (sec)
0.1
0.5010
0.15051
0.33992
0.10550
7.1E−5
1.0E−4
0.002
0.003
0.00999
0.20020
0.03
0.11423
0.1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
Figure 19. Test Circuit for Switching Characteristics
www.onsemi.com
6
10
100
1000
NGTG15N60S1EG
Figure 20. Definition of Turn On Waveform
www.onsemi.com
7
NGTG15N60S1EG
Figure 21. Definition of Turn Off Waveform
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative