NGTG35N65FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
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Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
35 A, 650 V
VCEsat = 1.70 V
EOFF = 0.28 mJ
C
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
E
Symbol
Value
Unit
Collector−emitter voltage
VCES
650
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
A
70
35
Pulsed collector current, Tpulse
limited by TJmax
ICM
120
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
$20
V
V
C
$30
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
TO−247
CASE 340L
STYLE 4
G
E
MARKING DIAGRAM
W
300
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G35N65FL2
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2015
September, 2016 − Rev. 1
1
Device
Package
Shipping
NGTG35N65FL2WG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTG35N65FL2W/D
NGTG35N65FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.50
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 35 A
VGE = 15 V, IC = 35 A, TJ = 175°C
VCEsat
1.50
−
1.70
2.20
2.00
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 175°C
ICES
−
−
−
−
0.5
4.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
3115
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
149
−
Cres
−
88
−
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 35 A, VGE = 15 V
Gate to collector charge
Qg
−
125
−
Qge
−
30
−
Qgc
−
63
−
td(on)
−
72
−
tr
−
40
−
td(off)
−
132
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 35 A
Rg = 10 W
VGE = 0 V/ 15 V*
tf
−
75
−
Eon
−
0.84
−
Eoff
−
0.28
−
Total switching loss
Ets
−
1.12
−
Turn−on delay time
td(on)
−
70
−
tr
−
38
−
td(off)
−
135
−
tf
−
96
−
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 35 A
Rg = 10 W
VGE = 0 V/ 15 V*
Eon
−
1.05
−
Turn−off switching loss
Eoff
−
0.50
−
Total switching loss
Ets
−
1.55
−
ns
mJ
ns
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTG35N65FL2WG.
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2
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
140
140
VGE = 20 to 15 V
13 V
100
80
60
11 V
40
10 V
7V
20
0
1
2
3
4
9V
8V
6
5
15 V
VGE = 20 to 17 V
100
13 V
80
60
11 V
40
10 V
9V
8V
7V
20
0
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
140
TJ = −55°C
VGE = 20 to
15 V
120
13 V
100
80
60
11 V
40
10 V
20
0
TJ = 150°C
120
VCE, COLLECTOR−EMITTER VOLTAGE (V)
140
IC, COLLECTOR CURRENT (A)
7
IC, COLLECTOR CURRENT (A)
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
120
7V
9V
8V
0
1
2
3
4
5
6
120
TJ = 25°C
100
80
TJ = 150°C
60
40
20
0
7
0
8
2
4
6
8
10
12
14
16
18
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.75
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
−75 −50 −25
10,000
IC = 70 A
Cies
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
IC = 35 A
IC = 15 A
IC = 5 A
1000
Coes
100
Cres
TJ = 25°C
10
0
25
50
75
0
100 125 150 175 200
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
VGE, GATE−EMITTER VOLTAGE (V)
20
18
16
14
12
10
8
6
4
VCE = 480 V
VGE = 15 V
IC = 35 A
2
0
0
40
20
60
80
120
100
140
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
1.75
1000
SWITCHING LOSS (mJ)
1.50
1.25
SWITCHING TIME (ns)
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
Eon
1.00
0.75
Eoff
0.50
VCE = 400 V
VGE = 15 V
IC = 35 A
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.25
0
0
20
40
60
80
100
120
140
10
160
0
20
Figure 8. Switching Loss vs. Temperature
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
100
120
140
160
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eon
2.0
1.5
Eoff
1.0
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
tf
100
td(on)
tr
0.5
0
15
80
Figure 9. Switching Time vs. Temperature
3.5
2.5
60
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
3.0
40
20
25
30 35
40
45 50
55 60
10
15
65 70 75
20
25
30 35
40
45 50
55 60
65 70 75
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Switching Loss vs. IC
Figure 11. Switching Time vs. IC
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4
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
10000
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
SWITCHING LOSS (mJ)
4.0
3.5
SWITCHING TIME (ns)
4.5
Eon
3.0
2.5
2.0
1.5
Eoff
1.0
1000
td(off)
tf
td(on)
100
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
tr
0.5
0
10
5
15
25
35
45
55
75
65
5
45
55
65
75
Figure 13. Switching Time vs. Rg
85
1000
IC = 35 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eon
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
1.4
35
Figure 12. Switching Loss vs. Rg
IC = 35 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
1.6
25
Rg, GATE RESISTOR (W)
2.0
1.8
15
Rg, GATE RESISTOR (W)
1.2
1.0
Eoff
0.8
0.6
0.4
td(off)
100
tf
td(on)
tr
0.2
10
175
0
150
200 250
300
350
400 450
500
550
600
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE
Figure 15. Switching Time vs. VCE
575
1000
1000
1 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
225
100 ms
100
50 ms
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
100
1000
VGE = 15 V, TC = 125°C
100
10
1
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Reverse Bias Safe Operating Area
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5
NGTG35N65FL2WG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R(t) (°C/W)
0.1
RqJC = 0.50
20%
10%
5%
0.01
Junction R1
2%
R2
Rn
C2
Cn
Ci = ti/Ri
0.001
C1
Single Pulse
Case
Ri (°C/W)
0.0642
0.0608
0.0507
0.1706
0.1422
0.0094
ti (sec)
0.0016
0.0052
0.0197
0.0185
0.0703
3.3481
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
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6
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
SCALE 1:1
E
E2/2
D
SEATING
PLANE
Q
2X
2
M
B A
M
NOTE 6
S
NOTE 3
1
0.635
P
A
E2
NOTE 4
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
F
L
L1
P
Q
S
3
L1
F
NOTE 5
L
2X
B
A
NOTE 4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.07
1.33
1.65
2.35
2.60
3.40
0.45
0.68
20.80
21.34
15.50
16.25
4.32
5.49
5.45 BSC
2.655
--19.80
20.80
3.81
4.32
3.55
3.65
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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