NHPJ08S600G

DATA SHEET www.onsemi.com Switch-mode Power Rectifiers PLANAR ULTRAFAST RECTIFIERS 8 A, 600 V 1 NHPV08S600G 4 3 Features • • • • • • 3 Ultrafast 30 Nanosecond Recovery Time 150°C Operating Junction Temperature High Voltage Capability of 600 V Low Forward Drop Low Leakage Specified @ 125°C Case Temperature This Device is Pb−Free and RoHS Compliant 1 4 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • 1 3 TO−220AC CASE 221B Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAMS AY WW HPV8S600G KA A Y WW G KA = = = = = Assembly Location Year Work Week Pb−Free Package Diode Polarity ORDERING INFORMATION Device Package NHPV08S600G TO−220AC (Pb−Free) Shipping 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 September, 2022 − Rev. 4 1 Publication Order Number: NHPV08S600/D NHPV08S600G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR) IF(AV) 8 A @ TC = 130°C A Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 8 A @ TC = 125°C A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 80 A TJ, Tstg −55 to +150 °C Operating Junction Temperature and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value NHPV08S600G: Thermal Resistance Junction−to−Case (Note 1) RqJC 1.5 NHPJ08S600G: Thermal Resistance Junction−to−Case (Note 1) RqJC 4.25 Unit °C/W °C/W 1. Junction−to−Case shown as a typical value using a fixed 25°C cold plate boundary. ELECTRICAL CHARACTERISTICS Characteristic Test Conditions Symbol Typ Max Unit Instantaneous Forward Voltage (Note 2) (IF = 8 A, TC = 125°C) (IF = 8 A, TC = 25°C) VF 1.5 2.7 1.8 3.2 V Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) IR 46 0.1 400 30 mA Reverse Recovery Time (IF = 0.5 A, Irr = 0.25 A, IR = 1 A) (IF = 1 A, dIF/dt = −50 A/ms, VR = 30 V) trr − − 30 50 ns Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 8 A, dIF/dt = −200 A/ms, TC = 25°C) trr IRM Qrr S 30 2.3 37 2 50 3 50 − ns A nC − Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 8 A, dIF/dt = −200 A/ms, TC = 125°C) trr IRM Qrr S 45 5.5 150 0.35 − − − − ns A nC − Forward Recovery Time Peak Forward Recovery Voltage (IF = 8 A, dIF/dt = 120 A/ms, TC = 25°C) tfr VFP − − 200 6 ns V 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NHPV08S600G TYPICAL CHARACTERISTICS IR, INSTANTANEOUS REVERSE CURRENT (mA) 1000 TA = 125°C TA = 150°C 10 TA = 25°C 1 TA = 150°C 10 TA = 125°C 1 0.1 TA = 25°C 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 0.001 4.0 3.5 400 500 600 Figure 2. Typical Reverse Characteristics C, JUNCTION CAPACITANCE (pF) 0.1 1 10 100 1000 15 RqJC = 1.5°C/W DC Square Wave 10 5 0 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating TO−220AC IPK/IAV = 10 IPK/IAV = 5 20 Square Wave 15 DC 10 5 TJ = 150°C 2 4 6 8 Trr, REVERSE RECOVERY TIME (ns) VR, REVERSE VOLTAGE (V) IPK/IAV = 20 0 300 Figure 1. Typical Instantaneous Forward Characteristics 25 0 200 VR, INSTANTANEOUS REVERSE VOLTAGE (V) TJ = 25°C 30 100 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 10 0 10 35 35 30 30 Trr 25 25 20 20 15 15 10 10 Qrr Vr = 30 V di/dt = 50 A/ms 5 0 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Forward Power Dissipation Figure 6. Typical Recovery Characteristics www.onsemi.com 3 5 8 0 Qrr, RECOVERED STORED CHARGE (nC) 0.1 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 100 IF(AV), AVERAGE FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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