NHPV15S600G

NHPV15S600G, NHPJ15S600G SWITCHMODE Power Rectifiers Features • • • • • • • • http://onsemi.com Ultrafast 30 Nanosecond Recovery Time 150°C Operating Junction Temperature High Voltage Capability of 600 V ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3A Low Forward Drop Low Leakage Specified @ 125°C Case Temperature These Devices are Pb−Free and are RoHS Compliant* NHPJ15S600G is Halogen−Free/BFR−Free PLANAR ULTRAFAST RECTIFIERS 15 A, 600 V 1 4 3 3 1 4 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 1 3 TO−220AC CASE 221B 3 TO−220 FULLPAK CASE 221AG MARKING DIAGRAMS AY WW HPV15S600G KA A Y WW G KA *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 0 1 AYWW HPJ15S600G KA = = = = = Assembly Location Year Work Week Pb−Free Package Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NHPV15S600/D NHPV15S600G, NHPJ15S600G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR) TO−220AC TO−220FP IF(AV) 15 A @ TC = 118°C 15 A @ TC = 60°C A Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz) TO−220AC TO−220FP IFRM 15 A @ TC = 110°C 15 A @ TC = 40°C A IFSM 150 A TJ, Tstg −55 to +150 °C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value NHPV15S600G: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 1.5 73 NHPJ15S600G: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 4.25 75 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max 1.5 2.7 1.8 3.2 46 0.1 800 60 trr − − 30 50 ns IRM Qrr S 7.7 220 0.15 9.9 − − A nC − 200 6 ns V Maximum Instantaneous Forward Voltage (Note 1) (iF = 15 A, TC = 125°C) (iF = 15 A, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR Maximum Reverse Recovery Time (IF = 0.5 A, Irr = 0.25 A, IR = 1 A) (IF = 1 A, dIF/dt = −50 A/ms, VR = 30 V) Current Charge Softness (IF = 15 A, dIF/dt = −200 A/ms, TC = 125°C) Maximum Forward Recovery Time Voltage (IF = 15 A, dIF/dt = 120 A/ms, TC = 25°C) tfr VFP Unit V mA 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Package Shipping† NHPV15S600G TO−220AC (Pb−Free) 50 Units / Rail NHPJ15S600G TO−220FP (Pb−Free / Halide−Free) 50 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NHPV15S600G, NHPJ15S600G TYPICAL CHARACTERISTICS 1000 IR, INSTANTANEOUS REVERSE CURRENT (mA) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C TA = 25°C 10 TA = 125°C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 1 0.01 4.0 3.5 200 300 400 500 600 Figure 2. Typical Reverse Characteristics 30 0.1 1 10 100 IF(AV), AVERAGE FORWARD CURRENT (A) 25 Square Wave 15 10 5 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating TO−220AC 25 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 30 RqJC = 4.25°C/W dc 20 Square Wave 10 5 0 10 RqJC = 1.5°C/W dc 20 0 1000 30 0 100 Figure 1. Typical Instantaneous Forward Characteristics 100 15 0 VR, INSTANTANEOUS REVERSE VOLTAGE (V) TJ = 25°C 10 TA = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1000 C, JUNCTION CAPACITANCE (pF) TA = 125°C 10 0.1 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) TA = 150°C 100 30 50 70 90 110 130 25 IPK/IAV = 5 IPK/IAV = 10 dc 20 15 Square Wave 10 5 0 150 IPK/IAV = 20 TJ = 150°C 0 2 4 6 8 10 12 14 16 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating TO−220 FULLPAK Figure 6. Forward Power Dissipation http://onsemi.com 3 18 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPACK, 2−LEAD CASE 221AG ISSUE B A E B P E/2 0.14 SCALE 1:1 M B A A H1 M SEATING PLANE A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e SIDE VIEW e1 TOP VIEW A NOTE 6 NOTE 6 D DATE 27 AUG 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.90 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC e1 5.08 BSC H1 6.40 6.90 L 12.70 14.73 L1 --2.80 P 3.00 3.40 Q 2.80 3.20 GENERIC MARKING DIAGRAM* H1 D XX XXXXXXXXX AWLYWWG SECTION A−A A ALTERNATE CONSTRUCTION SECTION D−D 1 A WL Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON52563E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 2−LEAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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