NIC9N05TS1

NIC9N05TS1, NIC9N05ATS1 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 52−59 V Gate−to−Source Voltage − Continuous VGS ±15 V TJ, Tstg −55 to 150 °C ESD 5000 500 Operating and Storage Temperature Range Electro−Static Discharge Capability (HBM) (MM) V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Drain (Pins 2, 4) Gate (Pin 1) RG MPWR Overvoltage Protection ESD Protection Source (Pin 3) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 1 1 Publication Order Number: NIC9N05TS1/D NIC9N05TS1, NIC9N05ATS1 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Note 1) Symbol Characteristic Min Typ Max Unit 52 55 59 V OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = 1.0 mA, TJ = 25°C) Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) IDSS Gate−Body Leakage Current (VGS = ±8 V, VDS = 0 V) (VGS = ±14 V, VDS = 0 V) IGSS 10 ±22 ±10 mA mA ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 100 mA) VGS(th) Static Drain−to−Source On−Resistance (VGS = 3.5 V, ID = 0.6 A) (VGS = 4.0 V, ID = 1.5 A) (VGS = 10 V, ID = 2.6 A) RDS(on) 1.3 1.75 2.5 190 165 107 380 200 125 0.81 0.66 1.5 V mW SOURCE−DRAIN DIODE CHARACTERISTICS IS = 2.6 A, VGS = 0 V IS = 2.6 A, VGS = 0 V, TJ = 125°C Forward On−Voltage VSD 1. 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