NID5003NT4G

NID5003N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 20 A, Single N−Channel, DPAK HDPlus
devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features • • • • • • Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection http://onsemi.com VDSS (Clamped) RDS(on) TYP ID MAX (Limited) 42 V 42 m @ 10 V 20 A* Drain Gate Input RG Overvoltage Protection MPWR ESD Protection Current Limit Temperature Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc Gate−to−Source Voltage VGS
14 Vdc Drain Current Continuous Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.2 Apk, L = 120 mH, RG = 25 ) Operating and Storage Temperature Range (Note 3) ID Internally Limited PD 1.3 2.3 °C/W RJC RJA RJA 3.0 95 54 EAS 600 mJ August, 2004 − Rev. 2 D5003N A Y W 3 1 D5003N 1 = Gate 2 = Drain 3 = Source ORDERING INFORMATION NID5003NT4 °C −55 to 150 AYW 2 = Device Code = Assembly Location = Year = Work Week Device TJ, Tstg 1 DPAK CASE 369C STYLE 2 W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu. 2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu. 3. Normal pre−fault operating range. See thermal limit range conditions.  Semiconductor Components Industries, LLC, 2004 MARKING DIAGRAM Package Shipping† DPAK 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *Max current may be limited below this value depending on input conditions. Publication Order Number: NID5003N/D NID5003N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 42 40 46 45 51 51 Vdc − − 0.6 2.5 5.0 − − 50 125 Adc 1.0 − 1.7 5.0 2.2 − Vdc −mV/°C − − 42 76 51 104 − − 50 88 58 125 VSD − 0.95 1.1 V s OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) (VGS = 0 Vdc, ID = 250 Adc, TJ = −40°C to 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) IGSSF Adc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) RDS(on) Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) RDS(on) Source−Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) m m SWITCHING CHARACTERISTICS Turn−on Time (Vin to 90% ID) RL = 4.7  Vin = 0 to 10 V, VDD = 12 V T(on) − 16 20 Turn−off Time (Vin to 10% ID) RL = 4.7  Vin = 0 to 10 V, VDD = 12 V T(off) − 80 100 Slew Rate On RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V −dVDS/dton − 1.4 − Vs Slew Rate Off RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V dVDS/dtoff − 0.5 − Vs Adc SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C) ILIM 12 7 18 13 24 18 Current Limit (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150°C) ILIM 18 13 22 18 30 25 Temperature Limit (Turn−off) VGS = 5.0 Vdc TLIM(off) 150 175 200 °C Thermal Hysteresis VGS = 5.0 Vdc TLIM(on) − 15 − °C Temperature Limit (Turn−off) VGS = 10 Vdc TLIM(off) 150 165 185 °C Thermal Hysteresis VGS = 10 Vdc TLIM(on) − 15 − °C Input Current during Thermal Fault VDS = 35 V, (VGS = 5.0 V, Tj = 150°C) Ig(fault) 0.6 − − mA Input Current during Thermal Fault VDS = 35 V, (VGS = 10 V, Tj = 150°C) Ig(fault) 2.0 − − mA 4000 400 − − − − ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. http://onsemi.com 2 V NID5003N TYPICAL PERFORMANCE CURVES 25 30 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 35 25 20 15 10 5 0 1 1.5 2 3 2.5 3.5 4 4.5 15 25°C 10 100°C 5 5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.5 3.5 3 2 2.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () 1 1.0 ID = 5 A TJ = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 4 6 5 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 3 2 10 TJ = 25°C 0.055 VGS = 5 V 0.05 0.045 VGS = 10 V 0.04 0.035 0.03 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 1.8 1.6 4 0.06 Figure 3. On−Resistance vs. Gate−to−Source Voltage ID = 5 A VGS = 10 V VGS = 0 V 1.4 TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 20 0 0.5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () VDS ≥ 10 V 1.2 1.0 0.8 0.6 0.4 1000 TJ = 100°C 100 0.2 0 −50 −30 −10 10 10 30 50 70 90 110 130 150 0 5 10 15 20 25 30 35 40 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 45 NID5003N TYPICAL PERFORMANCE CURVES IS, SOURCE CURRENT (AMPS) 10 VGS = 0 V TJ = 25°C 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NID5003N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING PLANE −T− V E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z C B 3 U K F J L H D G STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− T SOLDERING FOOTPRINT 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 http://onsemi.com 5 mm  inches MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NID5003N HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. NID5003N/D