NIF62514_06

NIF62514 Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features http://onsemi.com 6.0 AMPERES* 40 VOLTS CLAMPED RDS(on) = 90 mW Drain Overvoltage Protection MPWR • • • • • • • • • Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection Low RDS(on) IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Pb−Free Packages are Available Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense Source 4 Unit Vdc Vdc 1 2 3 MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate−to−Source Voltage Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Pulsed (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) Thermal Resistance, Junction−to−Tab Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH, RG = 25 W) Operating and Storage Temperature Range Symbol VDSS VDGR VGS ID ID IDM PD Value 40 40 "16 SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM Vdc 1 GATE AYW 62514 G G 2 DRAIN 3 SOURCE °C/W A = Assembly Location Y = Year W = Work Week 62514 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) 4 DRAIN Internally Limited 1.1 1.73 8.93 14 114 72.3 300 W RqJT RqJA RqJA EAS mJ TJ, Tstg −55 to 150 °C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto min pad board. 2. Mounted onto 1″ pad board. 3. Mounted onto large heatsink. © Semiconductor Components Industries, LLC, 2006 *Limited by the current limit circuit. Publication Order Number: NIF62514/D 1 April, 2006 − Rev. 5 NIF62514 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) (VGS = −5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mAdc) Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 4) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C) Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C) Source−Drain Forward On Voltage (IS = 7 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn−on Delay Time Turn−on Rise Time Turn−off Delay Time Turn−off Fall Time Slew−Rate On Slew−Rate Off 10% Vin to 10% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 10% ID to 90% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 90% Vin to 90% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V 90% ID to 10% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V td(on) trise td(off) tfall −dVDS/dton dVDS/dtoff − − − − − − 4.0 11 32 27 1.5 0.6 8.0 20 50 50 2.5 1.0 ms ms ms ms ms ms VGS(th) 1.0 − RDS(on) − − RDS(on) − − VSD − 105 185 1.05 120 210 − V 90 165 100 190 mW 1.7 4.0 2.0 6.0 Vdc mV/°C mW V(BR)DSS 42 42 IDSS − − IGSS − − 50 550 100 1000 0.5 2.0 2.0 10 mAdc 46 45 50 50 Vdc mAdc Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit Current Limit Temperature Limit (Turn−off) Temperature Limit (Circuit Reset) Temperature Limit (Turn−off) Temperature Limit (Circuit Reset) (VGS = 5.0 Vdc) (VGS = 5.0 Vdc, TJ = 150°C) (VGS = 10 Vdc) (VGS = 10 Vdc, TJ = 150°C) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc ILIM ILIM TLIM(off) TLIM(on) TLIM(off) TLIM(on) 6.0 3.0 7.0 4.0 150 135 150 130 9.0 5.0 10.5 7.5 175 160 155 140 11 8.0 13 10 200 185 185 170 Adc Adc °C °C °C °C ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD ESD 4000 400 − − − − V V 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com 2 NIF62514 TYPICAL ELECTRICAL CHARACTERISTICS 12 ID, DRAIN CURRENT (AMPS) 10 8 5V 6 4 2 0 0 1 2 3 4 3V TJ = 25°C 5 6 4V VGS = 10 V 7V 6V ID, DRAIN CURRENT (AMPS) 8 7 VGS = 10 V 6 5 5V 4 3 2 1 0 0 1 2 3 4 5 6 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4V 3V 7V 6V TJ = 150°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. Output Characteristics 14 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ = −40°C 3V VGS = 10 V 5V 4V 12 Figure 2. Output Characteristics VDS = 5 V 10 8 6 4 TJ = 150°C 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C TJ = −40°C 7V 6V Figure 3. Output Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 4. Transfer Characteristics 250 225 200 175 150 125 100 75 50 25 0 −50 Typical Maximum VGS = 10 V ID = 1.4 A 250 225 200 175 150 125 100 75 50 25 0 −50 Typical VGS = 5 V ID = 1.4 A Maximum −25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Drain−to−Source Resistance versus Junction Temperature Figure 6. Drain−to−Source Resistance versus Junction Temperature http://onsemi.com 3 NIF62514 IDSS, DRAIN−TO−SOURCE LEAKAGE CURRENT (mA) 4 GATE THRESHOLD VOLTAGE (V) VDS = 32 V 3 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 −50 −30 −10 10 30 50 70 90 110 130 150 VTH − 4 Sigma VTH + 4 Sigma VTH ID = 150 mA 2 1 Typical 0 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TEMPERATURE (°C) Figure 7. Drain−to−Source Resistance versus Junction Temperature Figure 8. Gate Threshold Voltage versus Temperature 12 Current Limit DRAIN CURRENT (AMPS) 10 VGS = 10 V 8 6 VGS = 5 V 4 2 0 0 1 2 3 4 5 TIME (ms) Temperature Limit Figure 9. Short−circuit Response R(t), TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 P(pk) t1 t2 Single Pulse 0.1 0.00001 0.0001 0.001 0.01 t,TIME (S) 0.1 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) − TA = P(pk) RqJA(t) RqJC @ R(t) for t ≤ 0.02 s 1 10 Figure 10. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) http://onsemi.com 4 NIF62514 ORDERING INFORMATION Device NIF62514T1 NIF62514T1G NIF62514T3G Package SOT−223 SOT−223 (Pb−Free) SOT−223 (Pb−Free) 1000 / Tape & Reel 4000 / Tape & Reel Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NIF62514 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 1 0° − INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE A 0.08 (0003) A1 q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 1 0° L1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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