NIMD6001ANR2G

NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed approximately 50 V, a logic 1 (> 3 V) will be asserted on the Diagnostic/Feedback pin. Internal isolation diodes permit the Disable and Diagnostic/ Feedback pins of multiple devices to be interconnected in a “wired-OR” configuration without additional components. http://onsemi.com 3.0 AMPERES 60 VOLTS RDS(on) = 110 mW SOIC−8 CASE 751 Features MARKING DIAGRAM RDSON 110 mW Maximum at VGS = 10 V Avalanche Energy Specified Gate Drive Disable Input Drain-Source Voltage Diagnostic Feedback Output Electrically Isolated Drains for Low Crosstalk Internal Resistors Limit Peak Transient gate Current AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Source 1 Gate 1 Source 2 Gate 2 • Automotive Injector Driver • Solenoid / Relay Driver Rating Symbol Value Unit Drain−to−Source Voltage (DC, sustained) VDSS 60 Vdc Gate−to−Source Voltage VGS "20 Vdc Single Pulse Drain-to-Source Avalanche Energy VDD = 60 V; VGS = 10 V; IPK = 2.6 A; L = 76 mH; Start Tj = 25°C Operating Junction Temperature Storage Temperature ID November, 2011 − Rev. 6 3 4 6 5 Drain 1 Disable Drain 2 Diag/Fbk 1 8 2 7 3 6 4 5 A 3.3 3.0 ID 10 A EAS 258 mJ TJ −55 − 150 °C TSTG −55 − 150 °C INTERNAL DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2011 7 (Note: Microdot may be in either location) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Single Pulse Drain Current Pulse duration = 80 ms 8 2 (Top View) D6001x = Specific Device Code x = N or A A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package Applications Continuous Drain Current VGS = 10 V, RqJA = 55°C/W VGS = 5.0 V, RqJA = 55°C/W 1 D6001x AYWWG G • • • • • • • • 1 ORDERING INFORMATION Device Package Shipping NIMD6001NR2G SOIC−8 (Pb−Free) 2500/Tape & Reel NIMD6001ANR2G SOIC−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NIMD6001N/D NIMD6001N, NIMD6001AN PIN DESCRIPTIONS Pin # Symbol Description 1 S1 FET 1 Source and Body 2 G1 FET 1 Gate 3 S2 FET 2 Source and Body 4 G2 FET 2 Gate 5 Diag/Fbk 6 D2 7 Disable 8 D1 Diagnostic Feedback − This pin will be logic high when either FET Drain-Source voltage exceeds the Drain Diagnostic threshold. FET 2 Drain Gate Disable − Pull this pin low to disable both FETs. A logic low will override voltage applied to G1 or G2. FET 1 Drain THERMAL RESISTANCE Parameter Symbol Value Units Junction-to-Ambient − min. pad footprint (Notes 1 and 2) RqJA 96 °C/W Junction-to-Ambient − 1″ Cu pad (Notes 1 and 3) RqJA 75 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Typ V(BR)DSS VGS = 0 V; ID = 5 mA 60 67 Zero Gate Voltage Drain Current (Note 1) IDSS VGS = 0 V; VDS = 15 V VGS = 0 V; VDS = 15 V; TA = 150°C Gate Input Current IGSS VGS = ±20 V; VDS = 0 V Gate Threshold Voltage VGS(TH) VDS = VGS; ID = 250 mA Static Drain-to-Source On-Resistance RDS(ON) VGS = 10 V; ID = 3.3 A Static Drain-to-Source On-Resistance RDS(ON) VGS = 5 V; ID = 3.0 A Parameter Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V 10 80 20 250 mA −100 ±25 +100 nA 1.0 1.7 3.0 60 110 mW 72 130 mW 150 175 pF 150 170 ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (Note 1) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance Total Gate Charge 25 30 RG 8 15 kW Qg(TOT) 8.3 9.0 nC 1.1 1.6 4.2 5 Gate-to-Source Gate Charge Qgs Gate-to-Drain Miller Charge Qgd 1. 2. 3. 4. VGS = 0 V; VDS = 15 V; f = 75 kHz VGS = 0 V to 5 V; VDD = 30 V; ID = 3.3 A; IG = 1.0 mA, These values are established by statistical characterization and may not be tested. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 40 sq. mm; 1 oz.) Surface-mounted on FR4 board using 1 sq. inch heat spreader (Cu area = 625 sq. mm, 2 oz.) Refer to Figure 1 for definition of switching characteristics symbols. http://onsemi.com 2 NIMD6001N, NIMD6001AN ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units 6.0 8.0 ms SWITCHING CHARACTERISTICS (Notes 1 and 4) Turn-On Time T(on) Turn-On Delay Td(on) Rise Time Tr 1.7 VGS = 10 V; VDD = 30 V; ID = 3.3 A, Ext. RGS = 47 W 3.9 Turn-Off Time T(off) 24 Turn-Off Delay Td(off) 15 Tf 9.0 Fall Time 28 BODY DIODE VSD VGS = 0 V, ISD = 3.3 A 1.25 V VFBK VDS = 35 V, RFBK-SOURCE = 51 kW 1.7 V VFBK(HI) VDS = 60 V, RFBK-SOURCE = 51 kW 3.0 5.5 V VDS threshold voltage for logical High VDSFBK(HI) Ramp VDS positive until VFBK = 3.5 V 45 65 V VDS threshold voltage for logical Low VDSFBK(LOW) Ramp VDS negative until VFBK = 0.8 V 25 45 V Gate Drive Disable Input Voltage, Gate Enable VDIS(HI) VDIS ≥ 3.0 V, VGS = 5 V, ID = 3.0 A 3 Gate Drive Disable Input Voltage, Gate Disable VDIS(LOW) VDIS ≤ 0.4 V, VGS = VDS = 10 V, ID ≤ 250 mA; Tj = 150°C (Note 1) Source-Drain Forward On Voltage 0.85 DIAGNOSTIC FEEDBACK (Note 1) Feedback voltage Feedback Logical High voltage DISABLE (Note 1) 1. 2. 3. 4. These values are established by statistical characterization and may not be tested. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 40 sq. mm; 1 oz.) Surface-mounted on FR4 board using 1 sq. inch heat spreader (Cu area = 625 sq. mm, 2 oz.) Refer to Figure 1 for definition of switching characteristics symbols. Figure 1. Switching Characteristics Waveforms and Symbols http://onsemi.com 3 V 0.4 V NIMD6001N, NIMD6001AN TYPICAL ELECTRICAL CHARACTERISTICS 7 10 5 4 3.0 V 3 2 1 RDS(on), DRAIN−SOURCE RESISTANCE (W) 0 8 TJ = 125°C 6 TJ = 25°C 4 2 TJ = −40°C 2.5 V 0 0.5 1.0 1.5 0 2.0 1.5 3.0 3.5 4.0 Figure 2. Drain Current vs. Drain−Source Voltage and Gate−Source Voltage Figure 3. Transfer Function (pulsed). Pulse duration = 80 ms, duty cycle < 0.5%; VDS = 2 V 100 VGS = 5 V, ID = 3 A 80 VGS = 10 V, ID = 3.3 A 60 40 20 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) 1.0 0.9 0.8 IS = 3 A 0.7 0.6 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Drain−Source On Resistance vs. Junction Temperature Figure 5. Body Diode Forward Voltage vs. Junction Temperature 5 2.5 VFBK, DIAGNOSTIC/FEEDBACK VOLTAGE (V) 3.0 ID, DRAIN CURRENT (mA) 2.5 VGS, GATE−SOURCE VOLTAGE (V) 120 TJ = 25°C 2.0 1.5 1.0 0.5 0 2.0 VDS, DRAIN−SOURCE VOLTAGE (V) VSD, SOURCE−DRAIN FORWARD VOLTAGE (V) ID, DRAIN CURRENT (A) 6 ID, DRAIN−CURRENT (A) VGS = 3.5 V 0 10 20 30 40 50 60 4 3 2 1 0 70 TJ = 25°C 0 10 20 30 40 50 60 VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 6. Off−State Drain Current vs. Drain−Source Voltage (includes feedback network current) Figure 7. Diagnostic Feedback Voltage vs. Drain−Source Voltage http://onsemi.com 4 70 NIMD6001N, NIMD6001AN 10 1000 Emax (mJ) ILmax (A) TJstart = 25°C TJstart = 150°C 1 TJstart = 25°C 100 TJstart = 150°C 10 10 100 10 100 LOAD INDUCTANCE (mH) LOAD INDUCTANCE (mH) Figure 8. Single Pulse Maximum Switch−off Current vs. Load Inductance Figure 9. Single Pulse Maximum Switching Energy vs. Load Inductance Figure 10. Single Pulse Peak Drain Current and Avalanche Energy Test Circuit http://onsemi.com 5 NIMD6001N, NIMD6001AN TYPICAL THERMAL RESPONSE CHARACTERISTICS RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (°C/W) 1000 100 D = 0.8 0.5 10 0.2 0.1 1 0.04 0.02 0.01 0.1 SINGLE PULSE 0.00001 0.0001 0.001 0.1 0.01 ON−TIME PULSE WIDTH (s) 1 10 100 1000 100 1000 100 1000 Figure 11. Single Channel Active; Mounted on Minimum−Pad Board RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (°C/W) 1000 100 10 1 0.1 D = 0.8 0.5 0.2 0.1 0.04 0.02 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON−TIME PULSE WIDTH (s) 1 10 Figure 12. Single Channel Active; Mounted on 1 Sq. Inch Copper Spreader RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (°C/W) 1000 100 D = 0.8 0.5 0.2 0.1 10 0.04 0.02 0.01 1 0.1 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON−TIME PULSE WIDTH (s) 1 10 Figure 13. Both Channels Active; Mounted on Minimum−Pad Board http://onsemi.com 6 NIMD6001N, NIMD6001AN TYPICAL THERMAL RESPONSE CHARACTERISTICS RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (°C/W) 1000 100 10 1 0.1 D = 0.8 0.5 0.2 0.1 0.04 0.02 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON−TIME PULSE WIDTH (s) 1 10 100 1000 100 1000 100 1000 Figure 14. Both Channels Active; Mounted on 1 Sq. Inch Copper Spreader RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (°C/W) 1000 100 D = 0.8 0.5 0.2 0.1 10 0.04 0.02 0.01 1 0.1 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON−TIME PULSE WIDTH (s) 1 10 Figure 15. Channels Alternatively Active; Mounted on Minimum−Pad Board RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (°C/W) 1000 100 10 1 0.1 D = 0.8 0.5 0.2 0.1 0.04 0.02 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON−TIME PULSE WIDTH (s) 1 10 Figure 16. Channels Alternatively Active; Mounted on 1 Sq. Inch Copper Spreader http://onsemi.com 7 NIMD6001N, NIMD6001AN TYPICAL APPLICATION CIRCUIT C1 C2 C3 C4 +VDD FBK D1 S1 Injector 1 Disable G1 D2 S2 Injector 4 U1 G2 C1 Diag NIMD6001/A S1 D1 Injector 2 C4 C2 C3 Disable G1 CONTROLLER FBK D2 S2 Injector 3 U2 G2 Diag NIMD6001/A Master Disable Figure 17. 4 Cylinder Engine Fuel Injection • 4-Cycle engine; 1 injector pulse during intake stroke • To optimize transient thermal resistance of the • Cylinder firing order is 1-3-4-2 • The coincident FBK pulse will be missing if any NIMD6001/A devices, the injector drive pulses are alternated between U1 and U2. injector is open or shorted. http://onsemi.com 8 NIMD6001N, NIMD6001AN PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) Y M M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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