NIS6111

NIS6111 BERStIC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode The NIS6111 ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems, such as those required for today’s digital circuits. It couples a high speed integrated circuit with a power MOSFET to create a diode with the same forward drop characteristics as a MOSFET. It offers increased efficiency for switching power supplies as well as in ORing diode applications. It offers a low on resistance that can be further reduced by the addition of external MOSFETs. It features the highest reverse recovery speed of any device in the industry. Features http://onsemi.com MARKING DIAGRAM 1 PLLP32 CASE 488AC 1 32 NIS6111 AWLYYWWG • • • • • Applications Redundant Power Supplies for High−Availability Systems Static ORing Diodes Low Voltage, Isolated Outputs Flyback, Forward Converter, Half Bridge Converters 5 PIN ASSIGNMENT Pin 1 2 3 4 5 Symbol Anode Bias Gate Cathode Reg In Function Power Input Connected to System Output of Internal Voltage Regulator provides power for internal only. No external components required at this pin. Gate Driver Output for Internal and External N−Channel MOSFET Power Output Connected to System Input of Internal Voltage Regulator Reg In Anode 1 Device NIS6111QPT1 NIS6111QPT1G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NIS6111/D © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 5 1 ÇÇÇÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇ ÇÇ ÇÇ ÇÇÇ ÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ Ç ÇÇÇ ÇÇÇÇÇÇÇÇ Ç ÇÇÇÇÇÇ Ç ÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇ Ç ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇÇÇ 1 4 3 2 (Bottom View) 4 Cathode 5 Gate NTD110N02R 3 • • • • • Low Forward Drop Improves System Efficiency Ultra High Speed Can be used in High Side and Low Side Configurations 24 V Rating Allows use of External MOSFETs for Extended Current Handling Capacity Pb−Free Package is Available* NIS6111= Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb−Free Package PIN CONNECTIONS Equivalent Circuit ORDERING INFORMATION Package PLLP32 PLLP32 (Pb−Free) Shipping† 1500 Tape & Reel 1500 Tape & Reel NIS6111 MAXIMUM RATINGS (TJ = 25°C, unless otherwise noted.) Rating Peak Repetitive Reverse Voltage (VK to VA) Peak Regulator Input (Reg In) Voltage Average Rectified Forward Current Non−repetitive Peak Surge Current Analog Die Thermal Resistance (Min Copper Area) MOSFET Die Thermal Resistance (Min Copper Area) Analog Die Thermal Resistance (Junction−to−Top of Board) MOSFET Die Thermal Resistance (Junction−to−Top of Board) Analog Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4) MOSFET Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4) Storage Temperature Range Operating Temperature Range Symbol VRRM Vregmax IFAV IFSM qA j−a qM j−a qA j−t qM j−t qA j−b qM j−b Tstg TJ Value 24 28 30 90 83 78 4.9 0.6 30 7.0 −55 to 150 −40 to 125 Unit V V A A °C/W °C/W °C/W °C/W °C/W °C/W °C °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. http://onsemi.com 2 NIS6111 ELECTRICAL CHARACTERISTICS (TJ = 25°C, Reg In = 8.0 V, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit SYNCHRONOUS RECTIFIER ON STATE Conduction Mode ON Resistance OFF STATE Reverse Leakage Current (VR = 24 VDC) Reverse Leakage Current (VR = 24 VDC, TJ = 125°C) SWITCHING (See Figures 1 and 3) (Note 2) FET Turn−on Time (Imax = 3.0 A, I rev = 1.0 A, Vrev = 5.0 V) Turnoff Propagation Delay Time (Vds = Voffset to ID = 0) BODY DIODE Forward On−Voltage (Notes 1 and 3) POWER SUPPLY (VR = 20 V, TJ = 255C) Supply Voltage (Pin 2 to Pin 1), Internal Bias Voltage Cap Charge Time (0.5 V Initial Charge, 5.0 V @ Reg In, to 4.5 V, C = 0.22 mF) TJ = −40°C to 125°C Headroom (for Vcap = 4.7 V) Minimum Duty Cycle for Operation (Freq = 100 kHz) (Note 5) Delay Time (Tamb = 20°C) Reg In Voltage (Pin 5 to Pin 1) Minimum Voltage Required for Operation (VUVLO + Vhd) Minimum Voltage Required for Full Gate Drive (VCC + Vhd) CONTROL CIRCUIT Bias Supply Current (VBIAS = 5.0 V) Input Offset Voltage Shutdown Voltage (UVLO) Turn−on Voltage (UVLO) 1. 2. 3. 4. 5. Pulse width v 300 ms, duty cycle v 2%. Pulse width 2.0 ms, duty cycle t5%. Switching characteristics are independent of operating junction temperature. Based on 0.062″ FR4 board, double−sided 1 oz copper. Minimum time required to recharge internal capacitor. IBIAS IOS VUVLO VTO 0.8 − 3.35 3.65 1.3 2.0 3.55 3.81 1.8 5.0 3.65 3.95 mA mV V V 4.8 6.3 V V VCC tchg tchg Vhd dmin Td 4.8 2.0 − 1.0 − 5.0 3.7 4.7 1.27 2.0 51 5.2 5.0 − 1.5 − V ms ms V % ns I = 10 Adc, VGS = 0 V I = 20 Adc, VGS = 0 V VSD − − 0.75 0.8 − 1.2 Vdc tsat tpd − − 45 35 − − ns ns IDSS IDSS − − − − 10 100 mA mA (I = 10 Adc, VGS = 5.0 V) (I = 20 Adc, VGS = 5.0 V) RON − − 3.7 4.7 4.5 − mW http://onsemi.com 3 NIS6111 Vrev Reg In Vfwd Vsat tsat Imax Bias trev − + Voltage Regulator Cathode Irev Gate Anode Figure 1. Switching Waveform Figure 2. Functional Block Diagram RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 ID = 55 A VGS = 4.5 V IDSS, LEAKAGE (nA) −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 0 −40 −20 0 20 40 60 80 100 120 TEMPERATURE (°C) Figure 3. Synchronous Buck Turn Off Delay Figure 4. On−Resistance Variation with Temperature 80 HEADROOM VOLTAGE (V) −20 0 20 40 60 80 100 120 TEMPERATURE (°C) 70 60 DELAY TIME (nS) 50 40 30 20 10 0 −40 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Figure 5. Delay Time versus Temperature Figure 6. Headroom versus Temperature http://onsemi.com 4 NIS6111 85 80 75 qJA (C/W) 70 65 60 55 50 45 40 0 500 1000 1500 2000 2500 3000 3500 (mm2) 4000 4500 5000 5500 6000 JA (M) − (M) Heated JA (A) − (A) Heated COPPER AREA Figure 7. Thermal Resistance vs. Copper Area for MOSFET (M) and Analog Die (A) 5.15 V Source 1 Load I2 15 V 5.2 V Source 2 Figure 8. Test Circuit for Short Circuit ORing Test Figure 9. Waveforms from Short Circuit ORing Test 18 V Reg In Cathode Gate Load Load 12 V NTD110N02R Reg In Cathode Anode Anode 5.0 V Figure 10. Positive ORing Diode Connection with Additional External FETs Figure 11. Negative ORing Diode Connection http://onsemi.com 5 NIS6111 OPERATING DESCRIPTION Introduction The BERS rectifier offers a new concept in rectification for low voltage, high current outputs. This product combines a high speed integrated circuit with a power MOSFET, to create a device with speeds better than an ultrafast silicon rectifier, and a forward drop that is less than that of a Schottky diode. This device is specifically designed for the low voltage outputs required by today’s digital circuits. Current digital products operate on voltages of less than 5.0 V and currents in the tens to hundreds of amperes. BERS can greatly increase the efficiency of low voltage, high current converters, by reducing the rectifier drop to several hundred millivolts. This device consists of four major circuits as well as a capacitor. BERS contains a power supply to regulate the voltage on the bias supply cap, a high speed comparator to sense the conduction state of the device, a high speed driver, a power FET and a capacitor. Bias Supply maximum charge voltage is reached, the switch is turned off. If there is not sufficient reverse voltage to maintain a 5.0 V charge on the capacitor, the bias supply will charge it to within 1.0 V of the reverse voltage. The Regulator Input pin can be connected to the cathode and will recharge the internal capacitor when the BERS is reversed biased. This input requires a minimum voltage of 4.7 V to operate. In some cases this amount of reverse voltage may not be available. When this is the case, the Reg In pin can be connected to a higher voltage source. It is not necessary that this source be synchronous with the cathode voltage. The Reg In voltage should not be allowed to go more negative than the anode of the device. If this scenario can occur, a small switching diode should be placed in series with the Reg In pin. Comparator/Driver The internal bias supply is a high current, switching regulator. It will maintain a regulated voltage on the internal capacitor as long as sufficient voltage is available at the Reg In pin. When this pin is high, a current limited switch allows current to charge the capacitor. When the Reg In The polarity comparator is a medium gain, ultra high speed design. It is integrated with the driver circuit, to optimize the switching speed of the device. The comparator input has a low offset voltage which biases the inverting input several millivolts above ground. This is to assure that at zero (or very low) current levels, the device is off. Cathode Bias UVLO + − − + Cap Power Supply Comparator and Driver FET Figure 12. Detailed Block Diagram http://onsemi.com 6 NIS6111 PACKAGE DIMENSIONS PLLP32 CASE 488AC−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO METALLIZED TERMINAL AND IS MEASURED BETWEEN 0.25 MM AND 40 MM FROM TERMINAL TIP 4. UNILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THEIR TERMINALS. DIM A A1 A3 b D D1 D2 D3 D4 D5 E E1 E2 e F1 F2 G H J K L L1 L2 L3 MILLIMETERS MIN NOM MAX 1.750 1.850 1.950 0.000 −−−− 0.050 0.254 REF 0.350 0.400 0.450 9.000 BSC 5.987 6.087 6.187 1.924 2.024 2.124 2.713 2.813 2.913 1.584 1.684 1.784 3.547 3.647 3.747 9.000 BSC 4.472 4.572 4.672 0.638 0.738 0.838 0.800 BSC 1.500 REF 1.324 1.424 1.524 2.700 2.800 2.900 2.000 REF 1.016 BSC 0.381 REF 0.500 0.600 0.700 0.062 0.162 0.262 0.760 0.770 0.870 0.281 0.381 0.481 D THERMAL #1 INDEX AREA A 2X 0.15 C TOP VIEW 2X 0.15 C A3 A A1 0.08 C SIDE VIEW D2 F1 F2 9 10 11 12 13 14 15 16 0.10 C 0.10 0.05 M M 32X b CAB F1 8 7 6 C e 5 4 3 2 #1 L3 L2 L1 L Ç Ç ÇÇÇ Ç ÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇ Ç ÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇ Ç ÇÇÇÇÇ Ç ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇ Ç ÇÇÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ D1 F1 K 17 18 19 20 21 22 23 24 32 31 30 29 28 27 26 25 E B C E2 E1 2X H D3 D4 J G L D5 BOTTOM VIEW http://onsemi.com 7 NIS6111 BERS is a trademark of Semiconductor Components Industries, LLC (SCILLC). The product described herein (NIS6111), may be covered by U.S. patents including 6,271,712. There may be other patents pending. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NIS6111/D