NJD1718T4G

NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • High Switching Speed: tSTG = 320 ns (typ) • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B u 8000 V • VCE(sat) = 0.5 Vdc (Max) @ IC = −1 A Machine Model, C u 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS MARKING DIAGRAM 4 DPAK CASE 369C STYLE 1 AYWW J 1718G MAXIMUM RATINGS Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TA = 25°C* Derate above 25°C Operating and Storage Junction Temperature Range Continuous Peak Symbol VCB VCEO VEB IC IB PD PD TJ, Tstg Value −50 −50 −5 −2 −3 −0.4 15 0.1 1.68 0.011 − 65 to +150 Unit Vdc Vdc Vdc Adc Adc W W/°C W W/°C °C 12 3 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Device ORDERING INFORMATION Device NJD1718T4G Package DPAK (Pb−Free) Shipping† 2500 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Case Junction−to−Ambient* Symbol RqJC RqJA Max 10 89.3 Unit °C/W *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 2 1 Publication Order Number: NJD1718/D NJD1718T4G ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎ Î ÎÎ Î ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) Collector Cutoff Current (VCB = −50 Vdc, IE = 0) BVCEO ICBO IEBO −50 − Vdc − − −100 −100 nAdc Emitter Cutoff Current (VBE = −5 Vdc, IC = 0) nAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = −0.5 A, VCE = 2 V) (IC = −1.5 Adc, VCE = 2 Vdc) hFE 70 40 240 − − Collector−Emitter Saturation Voltage (Note 1) (IC = −1 A, IB = −0.05 A) Base−Emitter Saturation Voltage (Note 1) (IC = −1 A, IB = −0.05 Adc) Base−Emitter On Voltage (Note 1) (IC = −1 Adc, VCE = −2 Vdc) VCE(sat) VBE(sat) VBE(on) − −0.2 −0.5 Vdc − − −1.2 Vdc − − −1.2 Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = −500 mAdc, VCE = −2 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT − 80 − MHz Cob tON − 33 − pF Switching Timers VCC = −30 V, IC = −1 A IB = −50 mA, RB = 200 W − − − 55 − − − ns tSTG tf 320 40 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 2. fT = ⎪hfe⎪• ftest. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) http://onsemi.com 2 NJD1718T4G TYPICAL CHARACTERISTICS 300 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V hFE, DC CURRENT GAIN 150°C 200 25°C 100 − 55°C 1.2 1 0.8 0.6 0.4 0.2 0 0.001 25°C 150°C IC/IB = 20 − 55°C 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 1. DC Current Gain VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) Figure 2. Collector−Emitter Saturation Voltage VBE(on), BASE−EMITTER VOLTAGE (V) 1.40 1.20 1.00 IC/IB = 20 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 VCE = 2.0 V − 55°C 25°C 150°C − 55°C 0.80 0.60 0.40 0.20 0.001 25°C 150°C 0.01 0.1 1 10 0.20 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage fT, CURRENT−GAIN − BANDWIDTH PRODUCT 1000 C, CAPACITANCE (pF) Cib 100 Cob TA = 25°C 100 VCE = 2.0 V TA = 25°C 10 1 0.1 1 10 100 10 0.001 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 5. Capacitance Figure 6. Current−Gain−Bandwidth Product http://onsemi.com 3 NJD1718T4G TYPICAL CHARACTERISTICS 10 IC, COLLECTOR CURRENT (A) 100 ms 1.0 ms 1 1.0 s PD, POWER DISSIPATION (W) 100 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 10 ms 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C) Figure 7. State Operating Area 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.05 0.02 0.01 0 (SINGLE PULSE) Figure 8. Power Derating D = 0.5 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t1 t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 9. Thermal Response http://onsemi.com 4 NJD1718T4G PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D C A B c2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− E b3 L3 1 4 A D 2 3 Z DETAIL A H L4 b2 e b 0.005 (0.13) M c C L2 GAUGE PLANE H C L L1 DETAIL A SEATING PLANE A1 ROTATED 90 CW 5 SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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