NJD2873

NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features http://onsemi.com • Pb−Free Package is Available • High DC Current Gain − • • • • hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 12 Symbol VCB VCEO VEB Continuous Peak IC IB PD PD TJ, Tstg Value 50 50 5 2 3 0.4 15 0.1 1.68 0.011 −65 to +175 Unit Vdc Vdc Vdc Adc Adc W W/°C W W/°C °C SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS MARKING DIAGRAM 4 MAXIMUM RATINGS Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TA = 25°C* Derate above 25°C Operating and Storage Junction Temperature Range DPAK CASE 369C STYLE 1 YWW J 2873G 3 Y WW G = Year = Work Week = Pb−Free Device ORDERING INFORMATION Device NJD2873 NJD2873G NJD2873RL NJD2873RLG NJD2873T4 NJD2873T4G Package DPAK DPAK (Pb−Free) DPAK DPAK (Pb−Free) DPAK DPAK (Pb−Free) Shipping † 75 Units / Rail 75 Units / Rail 1800 Units / Reel 1800 Units / Reel 2500 Units / Reel 2500 Units / Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Case Junction−to−Ambient* Symbol RqJC RqJA Max 10 89.3 Unit °C/W †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2006 1 November, 2006 − Rev. 8 Publication Order Number: NJD2873T4/D NJD2873T4 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 0.5 A, VCE = 2 V) (IC = 2 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) Collector−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 A) Base−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 Adc) Base−Emitter On Voltage (Note 1) (IC = 1 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 2. fT = ⎪hfe⎪• ftest. fT 65 − MHz hFE 120 40 80 VCE(sat) − VBE(sat) VBE(on) − − 1.2 0.95 − 0.3 1.2 Vdc Vdc 360 − 360 Vdc − VCEO(sus) 50 − Vdc Symbol Min Max Unit ICBO − IEBO − 100 100 nAdc nAdc Cob − 80 pF http://onsemi.com 2 NJD2873T4 TYPICAL CHARACTERISTICS 25 PD , POWER DISSIPATION (WATTS) 20 15 10 5 0 0 25 50 75 100 125 150 175 200 T, TEMPERATURE (°C) Figure 1. Power Derating 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 175°C hFE, DC CURRENT GAIN 150°C VCE = 2.0 V 0.4 175°C 150°C 0.3 100°C 25°C −40°C 0.2 100 100°C 25°C −40°C 0.1 Ic/Ib = 20 0 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain Figure 3. Collector−Emitter Saturation Voltage VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 175°C 0.1 1 Ic/Ib = 20 10 −40°C 25°C 100°C 150°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.01 0.1 1 10 VCE = 2.0 V −40°C 25°C 100°C 150°C 175°C 0.2 0.01 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage http://onsemi.com 3 NJD2873T4 1 0.7 0.5 0.3 0.2 0.05 0.02 0.01 0 (SINGLE PULSE) D = 0.5 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 0.07 0.05 0.03 0.02 0.01 0.02 t1 t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 6. Thermal Response http://onsemi.com 4 NJD2873T4 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− −T− B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D 2 PL G 0.13 (0.005) M J H T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L R S U V Z SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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