NJL21194DG

NJL21193DG (PNP), NJL21194DG (NPN) Complementary ThermalTrak™ Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices. Features • • • • • Thermally Matched Bias Diode Instant Thermal Bias Tracking Absolute Thermal Integrity Medium Frequency Device with Extended Safe Operating Area These are Pb−Free Devices http://onsemi.com BIPOLAR POWER TRANSISTORS 16 A, 250 V, 200 W Benefits • Eliminates Thermal Equilibrium Lag Time and Bias Trimming • Superior Sound Quality Through Improved Dynamic Temperature • • • Response Significantly Improved Bias Stability Simplified Assembly ♦ Reduced Labor Costs ♦ Reduced Component Count High Reliability TO−264, 5 LEAD CASE 340AA STYLE 1 MARKING DIAGRAM SCHEMATIC Applications • High−End Consumer Audio Products NJLxxxxDG AYYWW ThermalTrak ♦ • Home Amplifiers ♦ Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) xxxx G A YY WW = Specific Device Code = Pb−Free Device = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 0 1 Publication Order Number: NJL21193/D NJL21193DG (PNP), NJL21194DG (NPN) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc VCEX 400 Vdc IC 16 30 Adc Base Current − Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg − 65 to +150 °C VR 200 V IF(AV) 1.0 A Collector−Emitter Voltage − 1.5 V Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 0.625 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ATTRIBUTES Characteristic ESD Protection Value Human Body Model Machine Model Flammability Rating >8000 V > 400 V UL 94 V−0 @ 0.125 in ORDERING INFORMATION Package Shipping NJL21193DG Device TO−264 (Pb−Free) 25 Units / Rail NJL21194DG TO−264 (Pb−Free) 25 Units / Rail http://onsemi.com 2 NJL21193DG (PNP), NJL21194DG (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 250 − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − 100 mAdc 4.0 2.25 − − 25 8 75 − − 2.2 − − 1.4 4 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD % hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) − − − − fT 4 − MHz Cob − 500 pF Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) trr V 1.1 0.93 mA 10 100 100 ns 2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. 6.0 5.5 NPN NJL21194 f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP NJL21193 6.5 VCE = 10 V 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 IC COLLECTOR CURRENT (AMPS) TJ = 25°C ftest = 1 MHz 1.0 10 IC COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product Figure 1. Typical Current Gain Bandwidth Product http://onsemi.com 3 NJL21193DG (PNP), NJL21194DG (NPN) TYPICAL CHARACTERISTICS PNP NJL21193 NPN NJL21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 −25 °C TJ = 100°C 25°C 100 −25 °C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP NJL21193 NPN NJL21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 −25 °C TJ = 100°C 25°C 100 −25 °C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP NJL21193 NPN NJL21194 30 35 1.5 A 25 20 IB = 2 A I C, COLLECTOR CURRENT (A) I C, COLLECTOR CURRENT (A) 100 Figure 3. DC Current Gain, VCE = 20 V 1000 1A 15 0.5 A 10 5.0 IB = 2 A 30 1.5 A 25 1A 20 0.5 A 15 10 5.0 TJ = 25°C 0 1.0 10 IC COLLECTOR CURRENT (AMPS) 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 25°C 0 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 4 25 NJL21193DG (PNP), NJL21194DG (NPN) TYPICAL CHARACTERISTICS PNP NJL21193 NPN NJL21194 TJ = 25°C IC/IB = 10 2.0 1.5 1.0 VBE(sat) 0.5 VCE(sat) 0 0.1 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 1.4 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 1.0 VBE(sat) 0.8 0.6 0.4 0.2 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages PNP NJL21193 NPN NJL21194 TJ = 25°C 0.1 0.1 TJ = 25°C IC/IB = 10 Figure 9. Typical Saturation Voltages 10 1.0 1.2 0 0.1 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 VCE = 20 V (SOLID) 1.0 VCE = 5 V (DASHED) 10 100 10 TJ = 25°C VCE = 20 V (SOLID) 1.0 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage http://onsemi.com 5 100 100 NJL21193DG (PNP), NJL21194DG (NPN) 10 TJ = 100°C 1 IF, FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) 10 0.1 TJ = 25°C 0.01 TJ = −25°C 0.001 0.0001 0 20 40 60 80 1 0.1 100°C 0.001 0.3 100 120 140 160 180 200 25°C −25°C 0.01 VR, REVERSE VOLTAGE (VOLTS) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VF, VOLTAGE (VOLTS) Figure 13. Typical Reverse Current Figure 14. Typical Forward Voltage IC, COLLECTOR CURRENT (AMPS) 100 1 SEC 10 1.0 0.1 1.0 10 100 1000 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. Active Region Safe Operating Area http://onsemi.com 6 NJL21193DG (PNP), NJL21194DG (NPN) 10000 10000 TC = 25°C Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) TC = 25°C 1000 Cob 1000 f(test) = 1 MHz) 100 0.1 1.0 10 100 0.1 100 Cib Cob f(test) = 1 MHz) 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 16. NJL21193 Typical Capacitance Figure 17. NJL21194 Typical Capacitance 1.2 T , TOTAL HARMONIC HD DISTORTION (%) 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 18. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT −50 V Figure 19. Total Harmonic Distortion Test Circuit ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC). http://onsemi.com 7 8.0 W 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−264, 5 LEAD CASE 340AA−01 ISSUE O DATE 03 FEB 2005 SCALE 1:2 −T− Q −B− Y C 0.25 (0.010) M T B M E U N A R W L 1 3 4 2 5 P K M J H G D 5 PL F 5 PL 0.25 (0.010) M T B S STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. ANODE 5. CATHODE W S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 25.857 25.984 26.111 1.018 1.023 1.028 B 19.761 19.888 20.015 0.778 0.783 0.788 C 4.699 4.890 5.182 0.185 0.199 0.204 0.0480 BSC D 1.219 BSC E 1.890 2.042 2.184 0.0748 0.0804 0.0860 1.981 BSC 0.0780 BSC F 0.150 BSC G 3.81 BSC H 2.667 2.718 2.769 0.1050 0.1070 0.1090 0.0230 BSC J 0.584 BSC K 20.422 20.549 20.676 0.804 0.809 0.814 0.444 REF L 11.28 REF −−− 7_ 0_ 7_ 0 _ −−− M 0.180 REF N 4.57 REF P 2.259 2.386 2.513 0.0889 0.0939 0.0989 0.1370 BSC Q 3.480 BSC 0.100 REF R 2.54 REF −−− S 0 _ −−− 8_ 0_ 8_ 0.243 REF U 6.17 REF −−− W 0 _ −−− 6_ 0_ 6_ 0.0940 BSC Y 2.388 BSC GENERIC MARKING DIAGRAM* XXXXXX AYYWW XXXXXX A YY WW G or G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON19871D TO−264, 5 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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