NJVMJD253T4G-VF01
Complementary Silicon
Plastic Power Transistors
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
• High DC Current Gain
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakage
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
COMPLEMENTARY
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
1 2
Symbol
Value
Unit
VCB
100
Vdc
VCEO
100
Vdc
VEB
7.0
Vdc
IC
4.0
Adc
ICM
8.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
12.5
0.1
W
W/°C
Total Device Dissipation
@ TA = 25°C (Note 2)
Derate above 25°C
PD
1.4
0.011
W
W/°C
TJ, Tstg
−65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Operating and Storage Junction
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted on minimum pad sizes recommended.
3
DPAK−3
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J253G
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NJVMJD253T4G−VF01*
DPAK
(Pb−Free)
2,500
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 0
1
Publication Order Number:
NJVMJD253T4G−VF01/D
NJVMJD253T4G−VF01
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 2)
Symbol
Value
RqJC
RqJA
10
89.3
Min
Max
100
−
−
−
100
100
−
100
40
15
180
−
−
−
0.3
0.6
−
1.8
−
1.5
40
−
−
50
Unit
°C/W
2. When surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TJ = 125°C)
ICBO
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
DC Current Gain (Note 3)
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
Vdc
nAdc
mAdc
nAdc
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
MHz
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. fT = ⎪hFE⎪• ftest.
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2
NJVMJD253T4G−VF01
10
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
1.5 15
TA (SURFACE MOUNT)
1 10
TC
0.5
100ms
2
1ms
1
5ms
0.5
0.2
0.02
0
25
50
75
100
125
150
0.3
0.2
0.1
0.03
0.02
0.01
0.02
2
5
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
100
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
D = 0.5
0.2
0.1
0.07
0.05
1
T, TEMPERATURE (°C)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1
0.7
0.5
0.01
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.1
0.05
5
0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
500ms
5
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.02
0.01
0 (SINGLE PULSE)
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
Figure 3. Thermal Response
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3
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
200
NJVMJD253T4G−VF01
1.4
100
70
50
VCE = 1.0 V
VCE = 2.0 V
TJ = 150°C
TJ = 25°C
1.2
25°C
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
200
-55°C
30
20
10
7.0
5.0
1.0
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1.0 V
0.6
IC/IB = 10
0.4
5.0
0.2
3.0
2.0
0.04 0.06
VCE(sat)
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
0
0.04 0.06
4.0
0.1
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
Figure 4. DC Current Gain
0.4
0.6
1.0
+2.0
2.0
VCC
+30 V
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
4.0
Figure 5. “On” Voltages
+2.5
*qVC FOR VCE(sat)
RC
25 ms
25°C to
150°C
+11 V
SCOPE
RB
0
0
-55°C to 25°C
-0.5
-1.0
-1.5
-9.0 V
qVB FOR VBE
-55°C to 25°C
0.1
0.2
0.4
0.6
1.0
2.0
4.0
Figure 6. Temperature Coefficients
Figure 7. Switching Time Test Circuit
1K
10K
500
300
200
5K
3K
2K
tr
100
ts
t, TIME (ns)
1K
50
30
20
td
10
1
0.01
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
IC, COLLECTOR CURRENT (AMP)
5
3
2
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25°C to
150°C
-2.0
-2.5
0.04 0.06
t, TIME (ns)
0.2
IC, COLLECTOR CURRENT (AMP)
NPN MJD243
PNP MJD253
VCC = 30 V
IC/IB = 10
TJ = 25°C
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
IC, COLLECTOR CURRENT (AMPS)
3
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
500
300
200
100
50
30
20
5
tf
NPN MJD243
PNP MJD253
10
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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4
3
5
10
NJVMJD253T4G−VF01
200
200
TJ = 25°C
TJ = 25°C
100
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
100
Cib
70
50
30
Cob
20
Cib
70
50
30
20
Cob
MJD243 (NPN)
MJD253 (PNP)
10
1.0
10
2.0
3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
50 70 100
1
Figure 10. Capacitance
2
3
5
7 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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5
50
70
100
NJVMJD253T4G−VF01
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
A
E
b3
c2
4
L3
Z
D
1
L4
C
A
B
2
NOTE 7
c
SIDE VIEW
b
TOP VIEW
H
DETAIL A
3
b2
e
0.005 (0.13)
M
GAUGE
PLANE
C
Z
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
H
L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NJVMJD253T4G−VF01/D