Complementary Power
Transistors
DPAK For Surface Mount Applications
MJD31 (NPN), MJD32 (PNP)
Designed for general purpose amplifier and low speed switching
applications.
Features
•
•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
Symbol
VCEO
Max
Unit
Vdc
40
100
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
3.0
Adc
Collector Current − Peak
5.0
Adc
IB
1.0
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
W
W/°C
15
0.12
W
W/°C
1.56
0.012
TJ, Tstg
−65 to
+ 150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.3
°C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
80
°C/W
TL
260
°C
Lead Temperature for Soldering Purposes
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
© Semiconductor Components Industries, LLC, 2016
May, 2020 − Rev. 17
COLLECTOR
2,4
1
BASE
COLLECTOR
2,4
1
BASE
3
EMITTER
4
ICM
Characteristic
COMPLEMENTARY
Vdc
40
100
Base Current
Operating and Storage Junction Temperature
Range
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
3
EMITTER
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
Collector Current − Continuous
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1
4
1 2
3
1
DPAK
CASE 369C
STYLE 1
2
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J3xxG
DPAK
A
Y
WW
xx
G
YWW
J3xxG
IPAK
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Publication Order Number:
MJD31/D
MJD31 (NPN), MJD32 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
MJD31, MJD32
MJD31C, MJD32C
VCEO(sus)
Vdc
40
100
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, MJD32
(VCE = 60 Vdc, IB = 0)
MJD31C, MJD32C
ICEO
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−
−
mAdc
−
50
−
50
−
20
−
1
25
10
−
50
−
1.2
−
1.8
3
−
20
−
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = ⎪hfe⎪• ftest.
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2
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS
VCC
+30 V
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
+11 V
RB
SCOPE
0
1.5 15
TA (SURFACE MOUNT)
TC
1 10
0.5
5
0
0
25
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
50
75
100
T, TEMPERATURE (°C)
125
150
Figure 2. Switching Time Test Circuit
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
ts′
1
t, TIME (s)
μ
0.3
3
2
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
0.7
0.5
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
2
1
D1
51
-9 V
Figure 1. Power Derating
t, TIME (s)
μ
RC
25 ms
tr @ VCC = 10 V
tf @ VCC = 30 V
0.7
0.5
0.3
0.2
tf @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
100
td @ VBE(off) = 2 V
0.05 0.07 0.1
0.3
0.5 0.7
0.1
0.07
0.05
0.03
0.03
1
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
Figure 4. Turn−Off Time
2
Duty Cycle = 0.5
0.2
RqJA (°C/W)
10
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (sec)
Figure 5. Thermal Response
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3
1
10
100
1000
3
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
10
1
0.01
0.6
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
−55°C
0.1
1
10
25°C
100
10
1
0.01
150°C
0.2
25°C
0.1
−55°C
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
1.2
1.1
0.9
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.01
0.1
1
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
10
Figure 9. Base−Emitter Saturation Voltage
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE = 5 V
IC/IB = 10
1.0
Figure 8. Collector−Emitter Saturation Voltage
VBE(on), BASE−EMITTER ON VOLTAGE (V)
10
Figure 7. DC Current Gain at VCE = 2 V
0.3
0.2
0.001
1
Figure 6. DC Current Gain at VCE = 4 V
0.4
1.1
0.1
IC, COLLECTOR CURRENT (A)
0.5
1.2
−55°C
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0
0.001
VCE = 2 V
150°C
hFE, DC CURRENT GAIN
25°C
100
1000
VCE = 4 V
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
10
2
TA =
25°C
1.6
1.2
100 mA
500 mA
0.8
IC = 3 A
1A
0.4
10 mA
0
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 10. Base-Emitter “On” Voltage
Figure 11. Collector Saturation Region
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4
1000
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
Cib
100
Cob
10
100
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
TA = 25°C
VCE = 5 V
TA = 25°C
10
1
0.001
1
0.1
1
10
VR, REVERSE VOLTAGE (V)
100
Figure 12. Capacitance
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
10
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
1000
1s
100 ms
10 ms
1 ms
500 ms
1
0.1
0.01
Single Pulse Test @ TA = 25°C
0.001
0.1
1
0.01
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
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5
10
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1000
hFE, DC CURRENT GAIN
100
−55°C
10
1
0.01
0.9
1.4
150°C
0.5
0.4
0.3
0.2
25°C
0.1
0
0.001
0.01
0.1
1
10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation
Voltage
Figure 18. Base−Emitter Saturation Voltage
1.0
0.9
150°C
25°C
0.6
−55°C
0.3
0.2
0.001
1
IC/IB = 10
0.2
0.001
10
VCE = 5 V
0.4
0.1
Figure 16. DC Current Gain at VCE = 2 V
0.6
0.5
0.01
Figure 15. DC Current Gain at VCE = 4 V
−55°C
0.7
10
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.8
−55°C
1
10
0.7
1.1
100
IC, COLLECTOR CURRENT (A)
0.8
1.2
VBE(on), BASE−EMITTER ON
VOLTAGE (V)
1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
1
0.1
VCE = 2 V
25°C
150°C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1000
VCE = 4 V
25°C
150°C
2
TA =
25°C
500 mA
1.6
100 mA
1.2
1A
IC = 3 A
0.8
0.4
10 mA
0
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 20. Collector Saturation Region
Figure 19. Base−Emitter “On” Voltage
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6
1000
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS
Cib
100
Cob
10
1
0.1
1
10
100
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
TA = 25°C
VCE = 5 V
TA = 25°C
10
1
0.001
100
VR, REVERSE VOLTAGE (V)
0.01
1
Figure 22. Current−Gain−Bandwidth Product
10
1s
100 ms
10 ms
1 ms
500 ms
1
0.1
0.01
Single Pulse Test @ TA = 25°C
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 21. Capacitance
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
1000
0.1
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 23. Safe Operating Area
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7
10
MJD31 (NPN), MJD32 (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD31CG
DPAK
(Pb−Free)
369C
75 Units / Rail
NJVMJD31CG*
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD31C1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MJD31CRLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
NJVMJD31CRLG*
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD31CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD31CT4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD31T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD31T4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD32CG
DPAK
(Pb−Free)
369C
75 Units / Rail
NJVMJD32CG*
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD32CRLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD32CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD32CT4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD32RLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD32T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD32T4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
SCALE 1:1
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
DATE 15 DEC 2010
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
T
MARKING
DIAGRAMS
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
Discrete
YWW
xxxxxxxx
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
xxxxxxxxx
A
lL
Y
WW
DOCUMENT NUMBER:
DESCRIPTION:
98AON10528D
Integrated
Circuits
xxxxx
ALYWW
x
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
IPAK (DPAK INSERTION MOUNT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
B
c2
4
L3
Z
D
1
L4
C
A
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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