MJD6039, NJVMJD6039T4G
Darlington Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, convertors,
and power amplifiers.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Package is Available*
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SILICON
POWER TRANSISTORS
4 AMPERES,
80 VOLTS, 20 WATTS
DPAK
CASE 369C
STYLE 1
COLLECTOR 2, 4
BASE
1
MAXIMUM RATINGS
Rating
EMITTER 3
Symbol
Max
Unit
VCEO
80
Vdc
Collector−Base Voltage
VCB
80
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector−Emitter Voltage
Collector Current
Continuous
Peak
IC
Base Current
IB
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD
Total Power Dissipation (Note 1)
@ TA = 25C
Derate above 25C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
MARKING DIAGRAM
AYWW
J
6039G
Adc
4
8
100
mAdc
20
0.16
W
W/C
1.75
0.014
W
W/C
−65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
A
= Assembly Location
Y
= Year
WW = Work Week
J6039 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
DPAK
2,500/Tape & Reel
MJD6039T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
NJVMJD6039T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
Device
MJD6039T4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 9
1
Publication Order Number:
MJD6039/D
MJD6039, NJVMJD6039T4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
71.4
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
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ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
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ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
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2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
−
−
10
1000
500
−
−
−
2.5
−
2.8
25
−
−
100
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
Vdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 2 Adc, VCE = 4 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 2 Adc, VCE = 4 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
−
pF
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
VCC = 30 V
IC/IB = 250
t, TIME (s)
RB
51
25 ms
tr, tf 10 ns
DUTY CYCLE = 1%
D1
8 k 120
IB1 = IB2
TJ = 25C
ts
2
RC SCOPE
TUT
V2
APPROX
+8 V
0
V1
APPROX
-12 V
4
VCC
-30 V
tf
1
0.8
tr
0.6
0.4
+4V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
0.2
0.04 0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 1. Switching Times Test Circuit
PNP
NPN
0.1
td @ VBE(off) = 0
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
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2
2
4
MJD6039, NJVMJD6039T4G
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.01
0.03
0.02
SINGLE
PULSE
0.01
0.01
0.02 0.03
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
1000
500
TA TC
2.5 25
10
7
5
0.1ms
0.5ms
3
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Thermal Response
5ms
2
1ms
1
0.7
0.5
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIM
IT
TJ = 150C
CURVES APPLY BELOW RATED VCEO
0.3
0.2
dc
0.1
1
2
3
5
7
10
20
30
50 70
100
2 20
TC
1.5 15
1 10
0.5
5
0
0
TA
SURFACE
MOUNT
25
50
75
100
T, TEMPERATURE (C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
125
150
Figure 5. Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 6 and 7 is based on TJ(pk) = 150C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
TC = 25C
C, CAPACITANCE (pF)
100
70
50
30
20
10
0.04 0.06 0.1
Cob
Cib
PNP
NPN
0.2
0.4 0.6
1
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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3
10
20
40
MJD6039, NJVMJD6039T4G
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
6k
4k
hFE , DC CURRENT GAIN
VCE = 3 V
TJ = 125C
3k
25C
2k
-55C
1k
800
600
400
300
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
TJ = 125C
3
2.6
2.2
IC =
0.5 A
1A
2A
0.5
1
4A
1.8
1.4
1
0.6
0.1
0.2
2
5
10
20
IB, BASE CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
V, TEMPERATURE COEFFICIENTS (mV/C)
VBE(sat) @ IC/IB = 250
1.8
1.4
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
*APPLIED FOR IC/IB < hFE/3
0
25C to 150C
- 0.8
- 1.6
- 2.4
qVC for VCE(sat)
- 55C to 25C
- 3.2
-4
25C to 150C
qVC for VBE
- 4.8
0.04 0.06
0.1
25C to 150C
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (A)
REVERSE
2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
105
FORWARD
104
VCE = 30 V
NPN
MJD6039
TJ = 150C
BASE
COLLECTOR
102
101
100
100
+ 0.8
TJ = 25C
103
50
IC, COLLECTOR CURRENT (AMP)
2.2
V, VOLTAGE (VOLTS)
3.4
8k
100C
25C
10-1
-0.6 -0.4 -0.2
0 +0.2 +0.4 +0.6 +0.8 +1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+1.2 +1.4
60
EMITTER
Figure 11. Collector Cut−Off Region
Figure 12. Darlington Schematic
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4
3
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
C
A
B
c2
4
L3
Z
D
1
L4
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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