DATA SHEET
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Power Transistor, NPN, Dual
General Purpose
NPN TRANSISTOR
100 V, 3 A
100 V, 3 A
C5
MJK31C
These Bipolar Junction Transistors are designed for general purpose
power and switching applications such as regulators, converters
and power amplifiers. Housed in advanced LFPAK package
(5 x 6 mm) with excellent thermal conduction. Automotive
end applications include air bag deployment, power train control
units, and instrument clusters.
B4
E 123
Features
• Complementary PNP: MJK32C
• NJV Prefix for Automotive and Other Applications Requiring
•
LFPAK4 5x6
CASE 760AB
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
J31CG
XX
ALLYW
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
100
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
IC
3
A
ICM
5
A
TJ, Tstg
−65 to +150
_C
Rating
Collector Current − Continuous
Collector Current − Peak
Junction and Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
3
4
(Top View)
J31CG
A
LL
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristics
1
Device
Package
Shipping†
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
per Device (Note 1)
RqJC
2.4
_C/W
MJK31CTWG
LFPAK4 5x6
(Pb−Free)
3000 / Tape &
Reel
Thermal Resistance, Junction−to−Ambient
per Device (Note 1)
RqJA
45
_C/W
NJVMJK31CTWG
LFPAK4 5x6
(Pb−Free)
3000 / Tape &
Reel
PD
2.7
W
Total Power Dissipation
@ TA = 25_C (Note 1)
1. Surface−mounted on FR4 board using a 6 cm2, 2 oz. Cu collector pad.
© Semiconductor Components Industries, LLC, 2021
April, 2022 − Rev. 0
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MJK31C/D
MJK31C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
100
−
−
−
−
20
−
−
50
−
−
1.0
−
−
1.2
−
−
1.8
25
10
−
−
−
60
−
3
−
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
Vdc
mA
mA
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 0.375 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
DC Current Gain
(VCE = 4 Vdc, IC = 1 Adc)
(VCE = 4 Vdc, IC = 3 Adc)
hFE
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MJK31C
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. DC Current Gain
Figure 3. Saturation Voltage VCE(sat)
Figure 4. Saturation Voltage VBE(sat)
Figure 5. Collector Saturation Region
Figure 6. Capacitance
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3
MJK31C
TYPICAL CHARACTERISTICS (continued)
PD, POWER DISSIPATION (W)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 8. Power Derating
Figure 7. Current−Gain−Bandwidth Product
100
50% Duty Cycle
RqJA (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response, Junction−to−Case
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4
10
100
1000
MJK31C
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
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5
MJK31C
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6
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