NJVNJD2873T4G-VF01

NJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. www.onsemi.com Features • • • • • • High DC Current Gain Low Collector−Emitter Saturation Voltage High Current−Gain − Bandwidth Product Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit VCB 50 Vdc VCEO 50 Vdc VEB 5 Vdc IC 2 Adc ICM 3 Adc Base Current IB 0.4 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 15 0.1 W W/°C Total Device Dissipation @ TA = 25°C* Derate above 25°C PD 1.68 0.011 W W/°C TJ, Tstg −65 to +175 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS COLLECTOR 2,4 1 BASE 3 EMITTER 4 1 2 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AYWW J 2873G A Y WW G = Assembly Location = Year = Work Week = Pb−Free Device ORDERING INFORMATION Package Shipping† NJD2873T4G DPAK (Pb−Free) 2,500 Units / Reel NJVNJD2873T4G DPAK (Pb−Free) 2,500 Units / Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 January, 2017 − Rev. 18 1 Publication Order Number: NJD2873T4/D NJD2873 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit °C/W Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) RqJC RqJA 10 89.3 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 50 − − 100 − 100 120 40 80 360 − 360 − 0.3 − 1.2 − − 1.2 0.95 65 − − 80 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 10 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 0.5 A, VCE = 2 V) (IC = 2 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) hFE Collector−Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 A) VCE(sat) Base−Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 Adc) VBE(sat) Base−Emitter On Voltage (Note 2) (IC = 1 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MHz Cob pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 3. fT = ⎪hfe⎪• ftest. www.onsemi.com 2 NJD2873 TYPICAL CHARACTERISTICS PD , POWER DISSIPATION (WATTS) 25 20 15 10 5 0 25 0 50 75 100 125 150 175 200 T, TEMPERATURE (°C) Figure 1. Power Derating 1000 0.4 10 0.01 25°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 100°C 100 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V −40°C 0.6 0.5 100°C 150°C 0.4 0.3 Ic/Ib = 20 175°C 0.2 0.01 0.2 0.1 Ic/Ib = 20 Figure 3. Collector−Emitter Saturation Voltage 0.9 25°C 25°C −40°C Figure 2. DC Current Gain 1.0 0.7 100°C 0 0.01 10 1.1 −40°C 150°C 0.3 IC, COLLECTOR CURRENT (AMPS) 1 1.2 0.8 175°C 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 VBE(on), BASE−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 175°C 150°C 0.1 1 10 10 1.2 1.1 VCE = 2.0 V −40°C 1.0 25°C 0.9 100°C 150°C 175°C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage www.onsemi.com 3 10 NJD2873 1000 500 mA TA = 25°C TA = 25°C Cibo 0.8 C, CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1.0 10 mA 0.6 1A IC = 2 A 100 mA 0.4 0.2 0.01 10 0.1 1 100 10 1000 0.1 1 10 IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 6. Saturation Region Figure 7. Capacitance 100 10000 100 VCE = 10 V TA = 25°C IC, COLLECTOR CURRENT ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) Cobo 1 0 1 mS 1000 100 10 mS 100 mS 1S 100 10 1 0 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 10 10 100 Figure 9. Capacitance 0.2 0.2 0.1 0.01 0.02 1 Figure 8. Saturation Region 0.3 0.02 10000 VCE, COLLECTOR EMITTER VOLTAGE (V) D = 0.5 0.03 1000 IC, COLLECTOR CURRENT (mA) 1 0.7 0.5 0.1 0.07 0.05 100 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 10. Thermal Response www.onsemi.com 4 10 20 50 100 200 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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