NL17SG07EDFT2G

NL17SG07E Buffer with Open Drain Output The NL17SG07E MiniGatet is an advanced high−speed CMOS Buffer with Open Drain Output in ultra−small footprint. The NL17SG07E input and output structures provide protection when voltages up to 3.6 V are applied regardless of the supply voltage. www.onsemi.com Features Wide Operating VCC Range: 0.9 V to 3.6 V MARKING DIAGRAM High Speed: tPD = 2.5 ns (Typ) at VCC = 3.0 V, CL = 15 pF Low Power Dissipation: ICC = 0.5 mA (Max) at TA = 25°C SC−88A DF SUFFIX CASE 419A 3.6 V Overvoltage Tolerant (OVT) Input and Output Pins Ultra−Small Packages M • • • • • • A6 M G G These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant M G = Date Code* = Pb−Free Package (Note: Microdot may be in either location) NC 1 A 2 GND 3 5 VCC 4 Y *Date Code orientation and/or position may vary depending upon manufacturing location. PIN ASSIGNMENT PIN NAME NC 1 Figure 1. SC−88A (Top View) 1 A Y 2 A 3 GND 4 Y 5 VCC Figure 2. Logic Symbol FUNCTION TABLE Input A Output Y L H L Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2017 August, 2018 − Rev. 2 1 Publication Order Number: NL17SG07E/D NL17SG07E MAXIMUM RATINGS Symbol Parameter VCC DC Supply Voltage VIN DC Input Voltage VOUT DC Output Voltage Value Unit −0.5 to +4.6 V −0.5 to +4.6 V −0.5 to VCC + 0.5 −0.5 to +4.6 −0.5 to +4.6 V VIN < GND −20 mA VOUT < GND −20 mA Active Mode, LOW State Tri−State Mode, Output at Hi−Z State Power−Down Mode (VCC = 0 V) IIK DC Input Diode Current IOK DC Output Diode Current IOUT DC Output Source/Sink Current ±20 mA ICC DC Supply Current per Supply Pin ±20 mA IGND DC Ground Current per Ground Pin TSTG Storage Temperature Range ±20 mA −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C MSL Moisture Sensitivity FR Flammability Rating VESD ILATCHUP Level 1 Oxygen Index: 28 to 34 ESD Withstand Voltage UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Latch−up Performance above VCC and below GND at 125°C (Note 3) >2000 V ±75 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Min Max Unit VCC Positive DC Supply Voltage 0.9 3.6 V VIN Digital Input Voltage 0.0 3.6 V 0.0 0.0 0.0 VCC 3.6 3.6 V −55 +125 °C 0 10 ns/V VOUT TA Dt / DV Characteristics Output Voltage Output at Low State Tri−State Mode, Output at Hi−Z State Power−Down Mode (VCC = 0 V) Operating Temperature Range VCC = 3.3 V ± 0.3 V Input Transition Rise or Fail Rate Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NL17SG07E DC ELECTRICAL CHARACTERISTICS Symbol VIH VIL VOL Parameter Condition High−Level Input Voltage Low−Level Input Voltage Low−Level Output Voltage VIN = VIH or VIL −555C 3 TA 3 1255C TA = 255C VCC (V) Min 0.9 VCC VCC 1.1 to 1.3 0.70 x VCC 0.70 x VCC 1.4 to 1.6 0.65 x VCC 0.65 x VCC 1.65 to 1.95 0.65 x VCC 0.65 x VCC 2.3 to 2.7 1.7 1.7 3.0 to 3.6 2.0 Typ Max Min Max Unit V 2.0 0.9 GND GND 1.1 to 1.3 0.30 x VCC 0.30 x VCC 1.4 to 1.6 0.35 x VCC 0.35 x VCC 1.65 to 1.95 0.35 x VCC 0.35 x VCC 2.3 to 2.7 0.7 0.7 3.0 to 3.6 0.8 0.8 IOL = 20 mA 0.9 0.1 0.1 IOL = 0.3 mA 1.1 to 1.3 0.25 x VCC 0.25 x VCC IOL = 1.7 mA 1.4 to 1.6 0.25 x VCC 0.25 x VCC IOL = 3.0 mA 1.65 to 1.95 0.45 0.45 IOL = 4.0 mA 2.3 to 2.7 0.4 0.4 IOL = 8.0 mA 3.0 to 3.6 0.4 0.4 V V IIN Input Leakage Current VIN = 0 to 3.6 V 0.9 to 3.6 ±0.1 ±1.0 mA ICC Quiescent Supply Current VIN = VCC or GND 3.6 0.5 10 mA IOZ Output Tri− State Leakage Current VIN = VIH or VIL, VOUT = 0 to 3.6 V 0.9 to 3.6 1.0 10 mA IOFF Power Off Leakage Current VIN = 0 to 3.6 V VOUT = 0 to 3.6 V 0 1.0 10 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NL17SG07E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = −555C to +1255C TA = 255C Symbol Parameter Test Condition VCC (V) Min Typ Max Min Max Unit tPZL Propagation Delay, Enable Time, A to Y CL = 10 pF, R1 = RL = 5 kW 0.9 − 12 − − − ns 1.1 to 1.3 − 5.5 7.9 − 9.0 CL = 15 pF, R1 = RL = 5 kW CL = 30 pF, R1 = RL = 5 kW tPLZ Propagation Delay, Disable Time, A to Y CL = 10 pF, R1 = RL = 5 kW CL = 15 pF, R1 = RL = 5 kW CL = 30 pF, R1 = RL = 5 kW 1.4 to 1.6 − 4.0 5.7 − 7.3 1.65 to 1.95 − 3.3 3.9 − 5.9 2.3 to 2.7 − 2.7 3.3 − 4.5 3.0 to 3.6 − 2.4 2.9 − 3.7 0.9 − 12.5 − − − 1.1 to 1.3 − 5.8 8.1 − 9.2 1.4 to 1.6 − 4.1 6.0 − 7.4 1.65 to 1.95 − 3.4 4.0 − 6.2 2.3 to 2.7 − 2.8 3.4 − 4.6 3.0 to 3.6 − 2.5 3.0 − 3.7 0.9 − 13.2 − − − 1.1 to 1.3 − 6.2 8.7 − 9.8 1.4 to 1.6 − 4.5 6.2 − 7.6 1.65 to 1.95 − 3.5 4.2 − 6.4 2.3 to 2.7 − 3.0 3.6 − 4.7 3.0 to 3.6 − 2.6 3.1 − 3.9 0.9 − 8.0 − − − 1.1 to 1.3 − 6.5 10.9 − 11.5 1.4 to 1.6 − 5.2 8.9 − 9.5 1.65 to 1.95 − 4.9 8.8 − 9.4 2.3 to 2.7 − 3.8 8.4 − 9.3 3.0 to 3.6 − 3.5 8.1 − 8.5 0.9 − 11.1 − − − 1.1 to 1.3 − 9.0 13.4 − 14 1.4 to 1.6 − 7.9 11.4 − 12.0 1.65 to 1.95 − 7.6 11.3 − 11.9 2.3 to 2.7 − 6.3 10.9 − 11.8 3.0 to 3.6 − 6.0 10.6 − 11.0 0.9 − 16.2 − − − 1.1 to 1.3 − 14 20.2 − 20 1.4 to 1.6 − 13 18.9 − 19.5 1.65 to 1.95 − 12.5 18.8 − 19.4 2.3 to 2.7 − 11.2 18.4 − 19.3 3.0 to 3.6 − 11 18.1 − 18.3 ns ns ns ns ns CIN Input Capacitance 0 to 3.6 − 3 − − − pF CPD Power Dissipation Capacitance (Note 4) 0.9 to 3.6 − 4 − − − pF 4. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. www.onsemi.com 4 NL17SG07E VCC A 50% GND tPZL Y tPLZ HIGH IMPEDANCE 50% VCC 10% VCC Figure 3. Switching Waveform VCC R1 PULSE GENERATOR DUT RT CL Test Switch tPZL tPLZ VCC x 2 VCC x 2 VCC 2 GND RL Figure 4. Test Circuit ORDERING INFORMATION Device NL17SG07EDFT2G Package Shipping† SC−88A (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MiniGate is a trademark of Semiconductor Components Industries, LLC. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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