NL27WZ07DTT1

NL27WZ07 Dual Buffer with Open Drain Outputs The NL27WZ07 is a high performance dual buffer with open drain outputs operating from a 1.65 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level. This allows the NL27WZ07 to be used to interface 5 V circuits to circuits of any voltage between VCC and 7 V using an external resistor and power supply. Features http://onsemi.com MARKING DIAGRAMS 6 1 SC−88 DF SUFFIX CASE 419B 1 M7 M G G M • • • • • • • • • Extremely High Speed: tPD 2.3 ns (typical) at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation, CMOS compatible Over Voltage Tolerant Inputs LVTTL Compatible − Interface Capability with 5 V TTL Logic with VCC = 3 V LVCMOS Compatible 24 mA Output Sink Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 Pb−Free Packages are Available TSOP−6 DT SUFFIX CASE 318G 1 M7 M G = Device Code = Date Code* = Pb−Free Package M7 M G G (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. IN A1 1 6 OUT Y1 PIN ASSIGNMENT 1 2 GND 2 5 VCC 3 4 5 IN A2 3 4 OUT Y2 6 IN A1 GND IN A2 OUT Y2 VCC OUT Y1 Figure 1. Pinout (Top View) FUNCTION TABLE A Input L H Y Output L Z IN A1 IN A2 1 1 OUT Y1 OUT Y2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Figure 2. Logic Symbol © Semiconductor Components Industries, LLC, 2007 1 February, 2007 − Rev. 9 Publication Order Number: NL27WZ07/D NL27WZ07 MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC IGND TSTG PD qJA TL TJ ILatchup MSL FR VESD DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Power Dissipation in Still Air Thermal Resistance Lead Temperature, 1 mm from case for 10 s Junction Temperature under Bias Latchup Performance Moisture Sensitivity Flammability Rating ESD Classification Oxygen Index: 28 to 34 Human Body Model (Note 3) Machine Model (Note 4) Charged Device Model (Note 5) Above VCC and Below GND at 85°C (Note 5) SC−88, TSOP−6 SC−88, TSOP−6 Output in Z or LOW State (Note 1) VI < GND VO < GND Characteristics Value *0.5 to )7.0 *0.5 ≤ VI ≤ )7.0 *0.5 ≤ VO ≤ 7.0 *50 *50 $50 $100 $100 *65 to )150 200 333 260 )150 $500 Level 1 UL 94 V−0 @ 0.125 in > 2000 > 200 N/A Unit V V V mA mA mA mA mA °C mW °C/W °C °C mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B. 3. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO TA Dt/DV Supply Voltage Input Voltage Output Voltage Operating Free−Air Temperature Input Transition Rise or Fall Rate VCC = 2.5 V $0.2 V VCC =3.0 V $0.3 V VCC =5.0 V $0.5 V (Z or LOW State) Parameter Operating Data Retention Only Min 1.65 1.5 0 0 *40 0 0 0 Max 5.5 5.5 5.5 5.5 )85 20 10 5 Unit V V V °C ns/V http://onsemi.com 2 NL27WZ07 DC ELECTRICAL CHARACTERISTICS VCC (V) 1.65 to 1.95 2.3 to 5.5 1.65 to 1.95 2.3 to 5.5 VIN = VIL VOUT = VCC or GND IOL = 100 mA IOL = 4 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA IIN IOFF ICC Input Leakage Current Power Off−Output Leakage Current Quiescent Supply Current VIN or VOUT = VCC or GND VOUT = 5.5 V VIN = VCC or GND 2.3 to 5.5 1.65 to 5.5 1.65 2.3 2.7 3.0 3.0 4.5 0 to 5.5 0 5.5 0.0 0.08 0.20 0.22 0.28 0.38 0.42 TA = 25°C Min 0.75 VCC 0.75 VCC 0.3 VCC 0.3 VCC $5.0 0.1 0.24 0.3 0.4 0.4 0.55 0.55 $0.1 1 1 Typ Max *40°C ≤TA ≤ 85°C Min 0.75 VCC 0.75 VCC 0.3 VCC 0.3 VCC $10.0 0.1 0.24 0.3 0.4 0.4 0.55 0.55 $1.0 10 10 mA mA mA Max Unit V V mA V Symbol VIH VIL ILKG VOL Parameter High−Level Input Voltage Low−Level Input Voltage Z−State Output Leakage Current Low−Level Output Voltage VIN = VIL Condition Î ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎ Î ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎ Î ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎ Î ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎ Î ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎ Î ÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W TA = 25°C Typ 5.3 3.7 2.9 2.3 5.3 2.8 2.1 1.4 *40°C ≤TA ≤ 85°C Min 1.8 1.2 0.8 0.5 1.8 1.2 0.8 0.5 Max Symbol tPZL Parameter Condition VCC (V) Min 1.8 1.2 0.8 0.5 1.8 1.2 0.8 0.5 Max 11.5 5.8 4.4 3.5 Unit ns Propagation Delay (Figure 3 and 4) RL = R1= 5000 W, CL = 15 pF 1.8 $ 0.15 2.5 $ 0.2 3.3 $ 0.3 5.0 $ 0.5 12.0 6.4 4.8 3.9 RL = R1= 500 W, CL = 50 pF tPLZ Propagation Delay (Figure 3 and 4) RL = R1= 5000 W, CL = 15 pF 1.8 $ 0.15 2.5 $ 0.2 3.3 $ 0.3 5.0 $ 0.5 11.5 5.8 4.4 3.5 12.0 6.4 4.8 3.9 ns RL = R1= 500 W, CL = 50 pF CAPACITIVE CHARACTERISTICS Symbol CIN COUT CPD Parameter Condition Typical 2.5 4.0 4.0 Unit pF pF pF Input Capacitance Output Capacitance Power Dissipation Capacitance (Note 6) VCC = 5.5 V, VI = 0 V or VCC VCC = 5.5 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin ) ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin ) ICC  VCC. http://onsemi.com 3 NL27WZ07 VCC A 50% GND tPZL Y 50% VCC tPLZ HIGH IMPEDANCE VOL )0.3 V Figure 3. Switching Waveforms VCC R1 DUT RT CL RL PULSE GENERATOR VCC 2 RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Device NL27WZ07DFT2 NL27WZ07DFT2G NL27WZ07DTT1 NL27WZ07DTT1G Package SC−88 / SOT−363 / SC−70 SC−88 / SOT−363 / SC−70 (Pb−Free) 3000/Tape & Reel TSOP−6 / SOT−23 / SC−59 TSOP−6 / SOT−23 / SC−59 (Pb−Free) Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZ07 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M DIM A A1 A3 b C D E e L HE A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NL27WZ07 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D 6 5 1 2 4 3 HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 1 0° − INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 1 0° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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