NL27WZU04

NL27WZU04 Dual Unbuffered Inverter The NL27WZU04 is a high performance dual unbuffered inverter operating from a 1.65 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high−input impedance amplifier. For digital applications, the NL27WZ04 is recommended. Features http://onsemi.com MARKING DIAGRAMS 6 SC−88 / SOT−363/SC−70 DF SUFFIX CASE 419B M6 M G G M • • • • • • • Designed for 1.65 V to 5.5 V VCC Operation Unbuffered for Crystal Oscillator and Analog Applications LVCMOS Compatible Source/Sink $16 mA @ 4.5 V VCC Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 Pb−Free Packages are Available 1 6 TSOP−6/SOT−23/SC−59 DT SUFFIX CASE 318G 1 IN A1 1 6 OUT Y1 M6 M G = Device Code = Date Code* = Pb−Free Package M6 M G G GND 2 5 VCC IN A2 3 4 OUT Y2 (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Figure 1. Pinout (Top View) 1 2 3 IN A1 IN A2 1 1 OUT Y1 OUT Y2 4 5 6 PIN ASSIGNMENT IN A1 GND IN A2 OUT Y2 VCC OUT Y1 Figure 2. Logic Symbol ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. FUNCTION TABLE A Input L H Y Output H L © Semiconductor Components Industries, LLC, 2007 1 February, 2007 − Rev. 5 Publication Order Number: NL27WZU04/D NL27WZU04 MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC IGND TSTG PD qJA TL TJ VESD DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Power Dissipation in Still Air Thermal Resistance Lead Temperature, 1 mm from case for 10 s Junction Temperature under Bias ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Above VCC and Below GND at 85°C (Note 4) SC−88, TSOP−6 SC−88, TSOP−6 VI < GND VO < GND VO > VCC Characteristics Value *0.5 to )7.0 *0.5 ≤ VI ≤ VCC *0.5 to 7.0 *50 *50 +50 ±50 ±100 ±100 *65 to )150 200 333 260 )150 > 2000 > 200 N/A ±500 Unit V V V mA mA mA mA mA °C mW °C/W °C °C V ILatchup Latchup Performance mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A. 2. Tested to EIA/JESD22−A115−A. 3. Tested to JESD22−C101−A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO TA Dt/DV Supply Voltage Input Voltage Output Voltage Operating Free−Air Temperature Input Transition Rise or Fall Rate VCC = 2.5 V ± 0.2 V VCC = 3.0 V ± 0.3 V VCC = 5.0 V ± 0.5 V (High or LOW State) Parameter Operating Data Retention Only Min 1.65 1.5 0 0 *40 0 0 0 Max 5.5 5.5 5.5 VCC )85 20 10 5 Unit V V V °C ns/V http://onsemi.com 2 NL27WZU04 DC ELECTRICAL CHARACTERISTICS VCC (V) 1.65 to 1.85 2.3 to 5.5 VIL VOH Low−Level Input Voltage High−Level Output Voltage VIN = VIL VIN = GND IOH = −100 mA IOH = −3 mA IOH = −4 mA IOH = −6 mA IOH = −8 mA IOH = −12 mA IOH = −16 mA VOL Low−Level Output Voltage VIN = VIH VIN = VCC IOL = 100 mA IOL = 3 mA IOL = 4 mA IOL = 6 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IIN ICC Input Leakage Current Maximum Quiescent Supply Current VIN = VCC or GND VIN = VCC or GND 1.65 to 1.85 2.3 to 5.5 1.65 to 5.5 1.65 2.3 2.7 3.0 3.0 4.5 1.65 to 5.5 1.65 2.3 2.7 3.0 3.0 4.5 5.5 1.65 to 5.5 0.08 0.12 0.20 0.24 0.26 0.31 VCC−0.1 1.29 1.9 2.2 2.4 2.3 3.8 1.52 2.1 2.3 2.6 2.5 4.2 0.1 0.24 0.3 0.4 0.4 0.55 0.55 $0.1 1.0 TA = 25°C Min 0.85 VCC 0.8 VCC 0.15 VCC 0.2 VCC VCC−0.1 1.29 1.9 2.2 2.4 2.3 3.8 0.1 0.24 0.3 0.4 0.4 0.55 0.55 $1.0 10 mA mA V Typ Max *40°C ≤ TA ≤ 85°C Min 0.85 VCC 0.8 VCC 0.15 VCC 0.2 VCC V V Max Unit V Symbol VIH Parameter High−Level Input Voltage Condition Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎ ÎÎ Î Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î Î Î ÎÎ Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î Î Î ÎÎ Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î Î Î ÎÎ Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W Symbol tPLH tPHL Parameter Condition VCC (V) Min 1.5 1.2 0.8 1.2 0.5 0.8 TA = 25°C Typ 5.5 3.3 2.7 4.0 2.2 3.4 *40°C ≤ TA ≤ 85°C Min 1.5 1.2 0.8 1.2 0.5 0.8 Max 11.0 6.3 4.5 7.0 3.6 6.2 Max 1.8 5.7 4.1 6.4 3.3 5.6 Unit ns Propagation Delay Input A to Y (Figure 3 and 4) RL = 1 MW, CL = 50 pF 1.8$0.15 2.5$0.2 3.3$0.3 RL = 1 MW, CL = 15 pF RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF RL = 1 MW, CL = 15 pF 5.0$0.5 RL = 500 W, CL = 50 pF CAPACITIVE CHARACTERISTICS Symbol CIN COUT CPD Input Capacitance Output Capacitance Parameter Condition Typical 7 8 25 Unit pF pF pF VCC = 5.5 V, VI = 0 V or VCC VCC = 5.5 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC Power Dissipation Capacitance (Note 5) 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. http://onsemi.com 3 NL27WZU04 A or B 50% VCC GND tPLH tPHL Y 50% VCC PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. Switching Waveforms VCC PULSE GENERATOR RT DUT CL RL CL = 50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 500 W or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Device NL27WZU04DFT2 NL27WZU04DFT2G NL27WZU04DTT1 NL27WZU04DTT1G Package SC−88 / SOT−363 / SC−70 SC−88 / SOT−363 / SC−70 (Pb−Free) 3000 / Tape & Reel TSOP−6 / SOT−23 / SC−59 TSOP−6 / SOT−23 / SC−59 (Pb−Free) Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZU04 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M DIM A A1 A3 b C D E e L HE A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NL27WZU04 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D 6 5 1 2 4 3 HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 1 0° − INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 1 0° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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