NLAS3257CMX2TCG

NLAS3157, NLAS3257 Low Voltage SPDT Mux / Demux Analog Switch The NLAS3157 Mux / Demux Analog Switch is an advanced high− speed single−pole double−throw (SPDT) CMOS switch. It can be used as an analog switch or as a low−delay bus switch. Break−before−make switching prevents both switches being enabled simultaneously. This eliminates signal disruption during switching. The control input, S, is independent of supply voltage line switch in an ultra−small footprint. www.onsemi.com MARKING DIAGRAMS Features High Speed: tPD = 0.25 ns (Max) @ VCC = 4.5 V RON: 8.5 W Typ @ VCC = 4.2 V CON: 7.5 pF Typ @ VCC = 3.3 V VCC Range: 1.65 V to 4.5 V Ultra−Small 1 x 1 mm Package This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Typical Applications 1 6 S B1 2 5 GND A 3 4 B0 Y M B1 1 6 S GND 2 5 VCC B0 3 4 A Figure 1. ULLGA6 (NLAS3157) (Top View) XLLGA6 1.0 x 1.0 CASE 713AD LM = Specific Device Code = Date Code FUNCTION TABLE Figure 2. XLLGA6 (NLAS3257) (Top View) A M = Specific Device Code = Date Code L M • Mobile Phones, PDAs, Camera VCC ULLGA6 1.0 x 1.0 CASE 613AD Y • • • • • • Input S Function L H A = B0 A = B1 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. B0 B1 S Figure 3. Logic Diagram © Semiconductor Components Industries, LLC, 2016 May, 2018 − Rev. 3 1 Publication Order Number: NLAS3157/D NLAS3157, NLAS3257 Table 1. MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage −0.5 to +5.5 V VIN Control Input Voltage (S Pin) −0.5 to +5.5 V VIS Switch Input / Output Voltage (A, BO, B1 Pins) −0.5 to VCC + 0.5 V VIN < GND −50 mA VI/O < GND or VI/O > VCC ±50 mA IIK Control DC Input Diode Current (S Pin) IOK Switch I/O Port DC Diode Current (A, BO, B1 Pins) IO On−State Switch Current ±128 mA Continuous Current Through VCC or GND ±150 mA ICC DC Supply Current per Supply Pin ±150 mA IGND DC Ground Current per Ground Pin ±150 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias 150 °C qJA Thermal Resistance (Note 1) 407 °C/W PD Power Dissipation in Still Air at 85°C (Note 1) 1.5 mW MSL Moisture Sensitivity FR Flammability Rating VESD ILATCHUP Level 1 Oxygen Index: 28 to 34 ESD Withstand Voltage UL 94 V−0 @ 0.125 in Human Body Mode (Note 2) Machine Mode (Note 3) Charged Device Mode (Note 4) Latchup Performance Above VCC and Below GND at 85°C (Note 5) >8000 >300 >2000 V ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA/ JESD22−A114−A 3. Tested to EIA/ JESD22−A115−A 4. Tested to JESD22−C101−A 5. Tested to EIA / JESD78 Table 2. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage 1.65 4.5 V VI Control Input Voltage (S Pin) 0 4.5 V VIS Switch Input / Output Voltage (A, BO, B1 Pins) 0 VCC V TA Operating Free−Air Temperature −40 +85 °C Dt / DV Input Transition Rise or Fall Rate 0 0 5 DC ns/V Control Input Switch I/O Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NLAS3157, NLAS3257 Table 3. DC ELECTRICAL CHARACTERISTICS (Typical: T = 25°C, VCC = 3.3 V) −40°C to +85°C Symbol Parameter Test Conditions VCC (V) Min 0.75 1.25 1.52 1.94 Typ Max Unit VIH Control Input, HIGH Voltage 1.65 2.7 3.3 4.2 V VIL Control Input, LOW Voltage 1.65 2.7 3.3 4.2 0.25 0.4 0.4 0.5 V IIN Control Input, Leakage Current 0 ≤ VIS ≤ VCC 1.65 − 4.5 ±1.0 mA ICC Quiescent Supply Current VIS = VCC or GND; ID = 0 A 1.65 − 4.5 1.0 mA INC (OFF) INO (OFF) NC or NO Leakage Current VIS = 1.65 V to 4.5 V 4.5 ±10 ±100 nA ICOM (ON) COM ON Leakage Current VIS = 1.65 V to 4.5 V 4.5 ±10 ±100 nA Peak On−Resistance ION = 8 mA VIS = 0 V to VCC 1.65 2.7 3.3 4.2 15.4 10.8 9.5 8.5 23.2 12.4 11.0 9.9 W RFLAT On−Resistance Flatness ION = 8 mA VIS = 0 V to VCC 1.65 2.7 3.3 4.2 5.5 2.9 2.7 2.8 10.2 3.3 3.3 3.3 W DRON Delta On−Resistance ION = 8 mA VIS = 0 V to VCC 1.65 2.7 3.3 4.2 0.3 0.3 0.3 0.3 0.35 0.35 0.35 0.35 W ON RESISTANCE (Typical: T = 255C) RON Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. AC ELECTRICAL CHARACTERISTICS −405C to +855C Symbol Parameter Test Conditions VCC (V) Min Typ Max Unit 0.25 ns TIMING/FREQUENCY (Typical: T = 255C, VCC = 3.3 V, RL = 50 W, CL = 35 pF, f = 1 MHz) tPD Propagation Delay, A to Bn or Bn to A (See Figures 4 and 5) 1.65 − 4.5 tON Turn−ON Time (See Figures 7 and 8) 1.65 − 4.5 3.1 13.0 30.0 ns tOFF Turn−OFF Time (See Figures 7 and 8) 1.65 − 4.5 3.4 12.0 25.0 ns TBBM Break−Before−Make Time (See Figure 6) 1.65 − 4.5 2.0 −3 dB Bandwidth CL = 5 pF 1.65 − 4.5 1000 MHz BW ns ISOLATION (Typical: T = 255C, VCC = 3.3 V, RL = 50 W, CL = 5 pF) OIRR OFF−Isolation f = 240 MHz (See Figure 9) 1.65 − 4.5 -21 dB XTALK Non−Adjacent Channel Crosstalk f = 240 MHz 1.65 − 4.5 -21 dB www.onsemi.com 3 NLAS3157, NLAS3257 Table 4. AC ELECTRICAL CHARACTERISTICS CAPACITANCE (Typical: T = 255C) CIN Control Pin Input Capacitance VCC = 0 V, f = 1 MHz 1.5 VCC = 0 V, f = 10 MHz 1.0 CON ON Capacitance VCC = 3.3 V; OE = 0 V, S = 0 V or 3.3 V, f = 1 MHz 7.5 VCC = 3.3 V; OE = 0 V, S = 0 V or 3.3 V, f = 10 MHz 6.5 COFF OFF Capacitance VCC = VIS = 3.3 V; OE = 0 V, S = 3.3 V or 0 V, f = 1 MHz 3.8 VCC = VIS = 3.3 V; OE = 0 V, S = 3.3 V or 0 V, f = 10 MHz 2.0 VCC Input A 50% 50% GND tPLH tPHL VOH Output Y 50% VCC VOL Figure 4. Propagation Delay Waveforms VCC PULSE GENERATOR DUT RT CL RT = ZOUT of pulse generator (typically 50 W) Figure 5. Propagation Delay Test Circuit Figure 6. tBBM (Time Break−Before−Make) www.onsemi.com 4 RL pF NLAS3157, NLAS3257 Figure 7. tON / tOFF Figure 8. tON / tOFF Figure 9. Off Channel Isolation / On Channel Loss (BW)/Crosstalk (On Channel to Off Channel) / VONL ORDERING INFORMATION Package Shipping† NLAS3157MX3TCG ULLGA6 − 1.0 x 1.0, 0.35P (Pb−Free) 3000 / Tape & Reel NLAS3257CMX2TCG XLLGA6 − 1.0 x 1.0, 0.35P (Pb−Free) 3000 / Tape & Reel Device NLAS3257CMX3TCG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NLAS3157, NLAS3257 PACKAGE DIMENSIONS ULLGA6 1.0x1.0, 0.35P CASE 613AD ISSUE A PIN ONE REFERENCE 0.10 C ÉÉ ÉÉ ÉÉ 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. A MAXIMUM OF 0.05 PULL BACK OF THE PLATED TERMINAL FROM THE EDGE OF THE PACKAGE IS ALLOWED. A B D E DIM A A1 b D E e L L1 TOP VIEW 0.05 C A 6X 0.05 C SEATING PLANE SIDE VIEW MOUNTING FOOTPRINT SOLDERMASK DEFINED* C A1 MILLIMETERS MIN MAX −−− 0.40 0.00 0.05 0.12 0.22 1.00 BSC 1.00 BSC 0.35 BSC 0.25 0.35 0.30 0.40 5X 0.48 e 5X L 6X 0.22 NOTE 4 3 1 L1 1.18 6 4 0.53 6X b 0.10 C A B BOTTOM VIEW 1 PKG OUTLINE 0.05 C 0.35 PITCH DIMENSIONS: MILLIMETERS NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 NLAS3157, NLAS3257 PACKAGE DIMENSIONS XLLGA6 1.0x1.0, 0.35P CASE 713AD ISSUE O ÇÇ ÇÇ PIN ONE REFERENCE 0.05 C 2X 0.05 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO THE PLATED TERMINALS AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO ALL OF THE TERMINALS. A B D E DIM A A1 b D E e e2 L L1 TOP VIEW 0.05 C A 0.05 C A1 SIDE VIEW NOTE 4 SEATING PLANE C RECOMMENDED SOLDERING FOOTPRINT* 0.35 PITCH L1 e 6X 1 2 MILLIMETERS MIN MAX −−− 0.40 0.00 0.05 0.17 0.23 1.00 BSC 1.00 BSC 0.35 BSC 0.60 BSC 0.27 0.33 0.05 REF L 5X 0.50 3 PACKAGE OUTLINE e2 6 5 4 6X BOTTOM VIEW 1.25 1 0.55 b 0.07 M C A B 0.05 M C 6X 0.22 DIMENSIONS: MILLIMETERS NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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