NLAS325US

NLAS325 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS325 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent selection of 2 analog/digital signals. Available in the Ultra−Small 8 package. The use of advanced 0.6  CMOS process, improves the RON resistance considerably compared to older higher voltage technologies. www.onsemi.com MARKING DIAGRAM 8 Features • • • • • • • • • • On Resistance is 20  Typical at 5.0 V Matching is < 1.0  Between Sections 2.0−6.0 V Operating Range Ultra Low < 5.0 pC Charge Injection Ultra Low Leakage < 1.0 nA at 5.0 V, 25°C Wide Bandwidth > 200 MHz, −3.0 dB 2000 V ESD (HBM) RON Flatness "6.0  at 5.0 V Independent Enables; One Positive, One Negative These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant NO1 COM1 IN2 GND 1 8 2 7 3 6 4 5 VCC IN1 8 1 A9 M G G 1 A9 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 NO1 2 COM1 3 IN2 4 GND 5 NC2 6 COM2 7 IN1 8 VCC FUNCTION TABLE COM2 NC2 US8 US SUFFIX CASE 493 On/Off Enable Input Analog Switch 1 Analog Switch 2 L H Off On On Off Figure 1. Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 7 1 Publication Order Number: NLAS325/D NLAS325 MAXIMUM RATINGS Value Unit VCC Symbol DC Supply Voltage Parameter *0.5 to )7.0 V VI DC Input Voltage *0.5 to )7.0 V VO DC Output Voltage *0.5 to )7.0 V IIK DC Input Diode Current VI < GND *50 mA IOK DC Output Diode Current VO < GND *50 mA IO DC Output Sink Current $50 mA ICC DC Supply Current per Supply Pin $100 mA IGND DC Ground Current per Ground Pin $100 mA TSTG Storage Temperature Range *65 to )150 °C TL Lead Temperature, 1.0 mm from Case for 10 Seconds 260 °C TJ Junction Temperature under Bias )150 °C JA Thermal Resistance (Note 1) 250 °C/W PD Power Dissipation in Still Air at 85°C 250 mW MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 N/A V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 2.0 5.5 V VCC DC Supply Voltage VIN Digital Select Input Voltage GND 5.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range *55 )125 °C tr, tf Input Rise or Fall Time, SELECT 0 0 100 20 ns/V VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 117.8 TJ = 90°C 1,032,200 TJ = 100°C 80 TJ = 110°C Time, Years TJ = 120°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 2. Failure Rate vs. Time Junction Temperature www.onsemi.com 2 NLAS325 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Condition VCC *555C to 255C t855C t1255C Unit VIH Minimum High−Level Input Voltage, Select Inputs 2.0 2.5 3.0 4.5 5.5 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 V VIL Maximum Low−Level Input Voltage, Select Inputs 2.0 2.5 3.0 4.5 5.5 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 V IIN Maximum Input Leakage Current, Select Inputs VIN = 5.5 V or GND 0 V to 5.5 V $0.2 $2.0 $2.0 A ICC Maximum Quiescent Supply Current Select and VIS = VCC or GND 5.5 4.0 4.0 8.0 A DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Limit Symbol Parameter Condition VCC *555C to 255C t855C t1255C Unit RON Maximum “ON” Resistance (Figures 16 − 22) VIN = VIL or VIH VIS = GND to VCC IINI v 10 mA 2.5 3.0 4.5 5.5 85 45 30 25 95 50 35 30 105 55 40 35  RFLAT(ON) ON Resistance Flatness (Figures 16 − 22) VIN = VIL or VIH IINI v 10 mA VIS = 1.0 V, 2.0 V, 3.5 V 4.5 4.0 4.0 5.0  INC(OFF) INO(OFF) NO or NC Off Leakage Current (Figure 8) VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V 5.5 1.0 10 100 nA ICOM(ON) COM ON Leakage Current (Figure 8) VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 5.5 1.0 10 100 nA www.onsemi.com 3 NLAS325 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol Parameter *555C to 255C t855C t1255C VCC VIS Test Conditions (V) (V) Min Typ* Max Min Max Min Max Unit tON Turn−On Time (Figures 11 and 12) RL = 300  CL = 35 pF (Figures 4 and 5) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 5.0 5.0 2.0 2.0 23 16 11 9.0 35 24 16 14 5.0 5.0 2.0 2.0 38 27 19 17 5.0 5.0 2.0 2.0 41 30 22 20 ns tOFF Turn−Off Time (Figures 11 and 12) RL = 300  CL = 35 pF (Figures 4 and 5) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1.0 1.0 1.0 1.0 7.0 5.0 4.0 3.0 12 10 6.0 5.0 1.0 1.0 1.0 1.0 15 13 9.0 8.0 1.0 1.0 1.0 1.0 18 16 12 11 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 V (Figure 3) RL = 300  CL = 35 pF 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1.0 1.0 1.0 1.0 12 11 6.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ns *Typical Characteristics are at 25°C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8.0 10 10 20 pF ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition VCC Typical (V) 25°C Unit BW Maximum On−Channel −3.0 dB Bandwidth or Minimum Frequency Response (Figure 10) VIN = 0 dBm VIN centered between VCC and GND (Figure 6) 3.0 4.5 5.5 145 170 175 MHz VONL Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 6) 3.0 4.5 5.5 *2.0 *2.0 *2.0 dB VISO Off−Channel Isolation (Figure 9) f = 100 kHz; VIS = 1.0 V RMS VIN centered between VCC and GND (Figure 6) 3.0 4.5 5.5 *93 *93 *93 dB Q Charge Injection Select Input to Common I/O (Figure 14) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3.0 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figure 7) 3.0 5.5 1.5 3.0 Total Harmonic Distortion THD + Noise (Figure 13) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 5.0 VPP sine wave 5.5 0.1 Channel−to−Channel Crosstalk f = 100 kHz; VIS = 1.0 V RMS VIN centered between VCC and GND (Figure 6) 5.5 3.0 *90 *90 THD VCT www.onsemi.com 4 pC % dB NLAS325 VCC DUT VCC Input Output GND VOUT 0.1 F 300  tBMM 35 pF 90% of VOH 90% Output Switch Select Pin GND Figure 3. tBBM (Time Break−Before−Make) VCC DUT VCC 0.1 F 50% Input Output VOUT Open 50% 0V 300  VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 4. tON/tOFF VCC VCC 50% Input DUT Output 0V 300  VOUT Open 50% VOH 35 pF Output Input tOFF Figure 5. tON/tOFF www.onsemi.com 5 10% 10% VOL tON NLAS325 50  DUT Reference Transmitted Input Output 50  Generator 50  Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔfor VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3.0 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50  Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off On VIN Figure 7. Charge Injection: (Q) 100 LEAKAGE (nA) 10 1 ICOM(ON) 0.1 ICOM(OFF) 0.01 VCC = 5.0 V INO(OFF) 0.001 −55 −20 25 70 85 TEMPERATURE (°C) Figure 8. Switch Leakage vs. Temperature www.onsemi.com 6 125 Off VOUT NLAS325 +15 0 1.0 2.0 −20 +10 Bandwidth (ON−RESPONSE) +5 3.0 0 PHASE SHIFT 4.0 −40 (dB) (dB) Off Isolation −60 VCC = 5.0 V TA = 25°C −80 −100 0.01 0.1 −10 6.0 −15 7.0 −20 8.0 −25 9.0 10.0 0.01 100 200 1 10 FREQUENCY (MHz) −5 5.0 PHASE (°) 0 VCC = 5.0 V TA = 25°C −30 0.1 1 −35 100 300 10 FREQUENCY (MHz) Figure 9. Off−Channel Isolation Figure 10. Typical Bandwidth and Phase Shift 30 30 25 25 20 20 TIME (ns) TIME (ns) VCC = 4.5 V 15 tON (ns) 10 tOFF (ns) 5 0 2.5 3 3.5 4 4.5 10 tON 5 tOFF 0 −55 5 −40 85 25 125 VCC (VOLTS) Temperature (°C) Figure 11. tON and tOFF vs. VCC at 255C Figure 12. tON and tOFF vs. Temp 1 3.0 VINpp = 3.0 V VCC = 3.6 V 2.5 2.0 Q (pC) THD + NOISE (%) 15 0.1 VINpp = 5.0 V VCC = 5.5 V VCC = 5 V 1.5 1.0 0.5 VCC = 3 V 0 −0.5 0.01 1 10 0 100 1 2 3 4 FREQUENCY (kHz) VCOM (V) Figure 13. Total Harmonic Distortion Plus Noise vs. Frequency Figure 14. Charge Injection vs. COM Voltage www.onsemi.com 7 5 NLAS325 100 100 VCC = 2.0 V 10 80 RON () ICC (nA) 1 0.1 0.01 60 VCC = 2.5 V 40 VCC = 3.0 V 0.001 VCC = 3.0 V VCC = 4.0 V 20 0.0001 VCC = 5.0 V 0.00001 −40 −20 0 20 60 VCC = 5.5 V 80 100 0 0.0 120 3.0 4.0 5.0 VIS (VDC) Figure 15. ICC vs. Temp, VCC = 3.0 V and 5.0 V Figure 16. RON vs. VCC, Temp = 255C 90 90 80 80 70 70 60 60 RON () 100 RON () 2.0 Temperature (°C) 100 50 40 125°C 30 40 25°C −55°C 10 85°C 0.5 50 20 −55°C 10 6.0 30 25°C 20 0 0.0 1.0 1.0 1.5 2.0 0 0.0 2.5 85°C 125°C 0.5 1.0 1.5 VIS (VDC) 2.0 2.5 3.0 VIS (VDC) Figure 17. RON vs Temp, VCC = 2.0 V Figure 18. RON vs. Temp, VCC = 2.5 V 50 30 45 25 40 20 30 RON () RON () 35 25 20 125°C 10 15 0 0.0 25°C 85°C 10 5 15 5 25°C 85°C 125°C −55°C −55°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VIS (VDC) VIS (VDC) Figure 20. RON vs. Temp, VCC = 4.5 V Figure 19. RON vs. Temp, VCC = 3.0 V www.onsemi.com 8 4.5 NLAS325 25 25 125°C 20 20 RON () RON () 125°C 15 25°C 10 −55°C 85°C 25°C 10 85°C 5 0 0.0 15 −55°C 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.0 VIS (VDC) VIS (VDC) Figure 21. RON vs. Temp, VCC = 5.0 V Figure 22. RON vs. Temp, VCC = 5.5 V ORDERING INFORMATION Device Order Number NLAS325USG Package Type US8 (Pb−Free) Tape and Reel Shippingize† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS US8 CASE 493 ISSUE F DATE 01 SEP 2021 SCALE 4 :1 GENERIC MARKING DIAGRAM* 8 XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04475D US8 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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