NLAS3699B

NLAS3699B Dual DPDT Ultra−Low RON Switch The NLAS3699B is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a balanced microphone/speaker/ring−tone generator in a monophone mode. The device contains a break−before−make feature. Features http://onsemi.com MARKING DIAGRAMS 16 QFN−16 CASE 485AE 1 • • • • • • • • 1.65 to 4.5 V VCC Function Directly from LiON Battery Maximum Breakdown Voltage: 5.5 V Tiny 3 x 3 mm QFN Pb−Free Package Meet JEDEC MO−220 Specifications Low Static Power This is a Pb−Free Device* Cell Phone Speaker/Microphone Switching Ringtone−Chip/Amplifier Switching Four Unbalanced (Single−Ended) Switches Stereo Balanced (Push−Pull) Switching Typical Applications A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) D1 16 1S1 Vcc 4S2 15 14 13 Important Information • ESD Protection: • • • 1S2 1−2IN 2S1 D2 1 HBM (Human Body Model) > 8000 V MM (Machine Model) > 400 V Continuous Current Rating Through each Switch ±300 mA Conforms to: JEDEC MO−220, Issue H, Variation VEED−6 Pin for Pin Compatible with STG3699 2 3 4 5 6 7 2S2 GND 3S1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 0 Publication Order Number: NLAS3699B/D ÇÇ ÇÇ 1 8 • Single Supply Operation NLAB 3699 ALYWG G 12 D4 4S1 3−4IN 3S2 11 10 9 D3 NLAS3699B D S2 S1 IN Figure 1. Input Equivalent Circuit PIN DESCRIPTION QFN PIN # 1, 3, 5, 7, 9, 11, 13, 15 2, 10 4, 8, 12, 16 6 14 Symbol 1S1 to 4S1, 1S2 to 4S2 1−2IN, 3−4IN D1 to D4 GND VCC Independent Channels Controls Common Channels Ground (V) Positive Supply Voltage Name and Function TRUTH TABLE IN H L *High impedance. S1 ON OFF(*) S2 OFF(*) ON http://onsemi.com 2 NLAS3699B MAXIMUM RATINGS Symbol VCC VIS VIN Ianl1 Ianl−pk 1 Iclmp tr, tf Positive DC Supply Voltage Analog Input Voltage (VNO, VNC, or VCOM) Digital Select Input Voltage Continuous DC Current from COM to NC/NO Peak Current from COM to NC/NO, 10 duty cycle (Note 1) Continuous DC Current into COM/NO/NC with respect to VCC or GND Input Rise or Fall Time, SELECT VCC = 1.6 V − 2.7 V VCC = 3.0 V − 4.5 V 0 0 Parameter Value *0.5 to )5.5 *0.5 v VIS v VCC *0.5 v VI v)5.5 $300 $500 $100 20 10 Unit V V V mA mA mA ns/V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Defined as 10% ON, 90% off duty cycle. RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN VIS TA tr, tf DC Supply Voltage Digital Select Input Voltage Analog Input Voltage (NC, NO, COM) Operating Temperature Range Input Rise or Fall Time, SELECT VCC = 1.6 V − 2.7 V VCC = 3.0 V − 4.5 V Parameter Min 1.65 GND GND *40 0 0 Max 4.5 VCC VCC )85 20 10 Unit V V V °C ns/V http://onsemi.com 3 NLAS3699B DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VIH Parameter Minimum High−Level Input Voltage, Select Inputs Condition VCC 1.8 2.5 3.6 4.3 1.8 2.5 3.6 4.3 VIN = VCC or GND VIN = VCC or GND Select and VIS = VCC or GND 4.3 0 1.65 to 4.5 *405C to 255C 1.2 1.7 2.2 2.6 0.4 0.5 0.7 0.9 $0.1 $0.5 $1.0 t855C 1.2 1.7 2.2 2.6 0.4 0.5 0.7 0.9 $1.0 $2.0 $2.0 Unit V VIL Maximum Low−Level Input Voltage, Select Inputs V IIN IOFF ICC Maximum Input Leakage Current, Select Inputs Power Off Leakage Current Maximum Quiescent Supply Current (Note 2) mA mA mA DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Maximum Limit −405C to 255C Symbol RON Parameter NC/NO On−Resistance (Note 2) Condition VIN v VIL or VIN w VIH VIS = GND to VCC IINI v 100 mA ICOM = 100 mA VIS = 0 to VCC VIS = 1.3 V; ICOM = 100 mA VIS = 1.5 V; ICOM = 100 mA VIS = 2.2 V; ICOM = 100 mA VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 4.0 V VIN = VIL or VIH VNO 0.3 V or 4.0 V with VNC floating or VNC 0.3 V or 4.0 V with VNO floating VCOM = 0.3 V or 4.0 V VCC 2.5 3.0 4.3 2.5 3.0 4.3 2.5 3.0 4.3 4.3 −10 Min Max 0.65 0.6 0.55 0.15 0.15 0.15 0.06 0.05 0.05 10 −100 t855C Min Max 0.75 0.75 0.70 0.15 0.15 0.15 0.06 0.05 0.05 100 nA Unit W RFLAT NC/NO On−Resistance Flatness (Notes 2, 4) W DRON On−Resistance Match Between Channels (Notes 2 and 3) W INC(OFF) INO(OFF) ICOM(ON) NC or NO Off Leakage Current (Note 2) COM ON Leakage Current (Note 2) 4.3 −10 10 −100 100 nA 2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 3. DRON = RON(MAX) − RON(MIN) between nS1 or nS2. 4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog signal ranges. http://onsemi.com 4 NLAS3699B AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit VCC (V) 2.3 − 4.5 2.3 − 4.5 VIS (V) 1.5 1.5 *405C to 255C Min Typ* Max 50 30 t855C Min Max 60 40 Unit ns ns ns 3.0 1.5 2 15 Symbol tON tOFF tBBM Parameter Turn−On Time Turn−Off Time Minimum Break−Before−Make Time Test Conditions RL = 50 W, CL = 35 pF (Figures 3 and 4) RL = 50 W, CL = 35 pF (Figures 3 and 4) VIS = 3.0 RL = 50 W, CL = 35 pF (Figure 2) Typical @ 25, VCC = 4.5 V CIN CSN CD Control Pin Input Capacitance SN Port Capacitance D Port Capacitance When Switch is Enabled 7.0 72 230 pF pF pF *Typical Characteristics are at 25°C. ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol BW Parameter Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response (Figure 12) Maximum Feed−through On Loss Off−Channel Isolation (Figure 13) Charge Injection Select Input to Common I/O (Figure 8) Total Harmonic Distortion THD + Noise (Figure 7) Channel−to−Channel Crosstalk Condition VIN centered between VCC and GND (Figure 5) VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 5) f = 100 kHz; VIS = 1 V RMS; CL = 5 pF VIN centered between VCC and GND(Figure 5) VIN = VCC to GND, RIS = 0 W, CL = 1 nF Q = CL x DVOUT (Figure 6) FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF VIS = 2 VPP f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 W VIN centered between VCC and GND (Figure 5) VCC (V) 1.65 − 4.5 255C Typical 20 Unit MHz VONL VISO Q THD VCT 1.65 − 4.5 1.65 − 4.5 1.65 − 4.5 4.5 1.65 − 4.5 −0.06 −62 50 0.01 −62 dB dB pC % dB 5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch. http://onsemi.com 5 NLAS3699B DUT VCC 0.1 mF 50 W Output VOUT 35 pF 90% Output Input GND tBMM 90% of VOH VCC Switch Select Pin GND Figure 2. tBBM (Time Break−Before−Make) VCC DUT VCC 0.1 mF Open Output VOUT 50 W 35 pF Output VOL Input tON tOFF Input 0V VOH 90% 90% 50% 50% Figure 3. tON/tOFF VCC DUT Output Open 50 W VOUT 35 pF Input VCC 50% 0V VOH Output VOL 10% 10% 50% Input tOFF tON Figure 4. tON/tOFF http://onsemi.com 6 NLAS3699B 50 W Reference Input Output 50 W Generator 50 W DUT Transmitted Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VONL = On Channel Loss = 20 Log VOUT VIN for VIN at 100 kHz VOUT VIN for VIN at 100 kHz to 50 MHz Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 W Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT Open Output VIN VCC GND CL Output Off Off DVOUT VIN On Figure 6. Charge Injection: (Q) 1 CHARGE INJECTION “Q” (pC) 5 0 2.5 V −5 −10 −15 −20 −25 −30 100 1000 FREQUENCY (Hz) 10000 100000 0 0.5 1 1.5 2 2.5 VIN (V) 3 3.5 4 4.5 5 1.65 V 3.0 V 0.1 THD (%) 0.01 3.6 V 0.001 10 Figure 7. Total Harmonic Distortion Plus Noise Versus Frequency Figure 8. Charge Injection versus Vis http://onsemi.com 7 NLAS3699B 2 1.2 1.6 1.8 V 0.8 85°C 25°C RON (W) 0.8 2.5 V 3.0 V 3.6 V RON (W) 1.2 0.4 −40°C 0.4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.0 0.5 1.0 1.5 VIN (V) 2.0 2.5 3.0 VCOM (V) Figure 9. On−Resistance vs. COM Voltage Figure 10. RON vs. VIN vs. Temperature @ VCC = 3.0 V 0.8 0.7 0.6 RON (W) 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.5 1.0 1.5 2.0 VIN (V) 2.5 3.0 3.5 4.0 −40°C 85°C 25°C POUT (dB) 0 −2 −4 −6 −8 −10 −12 −14 −16 −18 −20 0.1 1 10 FREQUENCY (MHz) 100 1000 Figure 11. RON vs. VIN vs. Temperature @ VCC = 3.6 V Figure 12. Bandwidth vs. Frequency @ VCC = 1.65 V to 3.6 V 0 −10 −20 −30 −40 −50 −60 −70 0.1 PHASE (deg) 1 10 FREQUENCY (MHz) 100 1000 POUT (dB) 40 30 20 10 0 −10 −20 −30 −40 −50 0.1 1 10 FREQUENCY (MHz) 100 1000 Figure 13. Off−Isolation vs. Frequency @ VCC = 1.65 V to 3.6 V http://onsemi.com 8 Figure 14. Phase Angle vs. Frequency @ VCC = 1.65 V to 3.6 V NLAS3699B DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number NLAS3699BMN1R2G Circuit Indicator NL Technology AS Device Function 3699B Package Suffix MN1 Tape & Reel Suffix R2G Package Type QFN (Pb−Free) Tape & Reel Size† 3000 Unit / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 NLAS3699B PACKAGE DIMENSIONS QFN−16 (3 x 3 x 0.85 mm) CASE 485AE−01 ISSUE O D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. OUTLINE MEETS JEDEC DIMENSIONS PER MO−220, VARIATION VEED−6. DIM A A1 A3 b D D2 E E2 e K L SEATING PLANE MILLIMETERS MIN NOM MAX 0.800 0.900 1.000 0.000 0.025 0.050 0.200 REF 0.180 0.250 0.300 3.00 BSC 1.250 1.40 1.550 3.00 BSC 1.250 1.40 1.550 0.500 BSC 0.200 −−− −−− 0.300 0.400 0.500 PIN 1 LOCATION 0.15 C 0.15 C 0.10 C TOP VIEW 16 X 0.08 C SIDE VIEW A1 C 16X L 5 8 NOTE 5 4 16X K 1 12 16X b BOTTOM VIEW 0.10 C A B 0.05 C NOTE 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. ÇÇ ÇÇ (A3) D2 e 9 16 13 E A EXPOSED PAD E2 http://onsemi.com 10 NLAS3699B/D