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NLSF3T126MNR2

NLSF3T126MNR2

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VFQFN16_EP

  • 描述:

    IC BUFFER NON-INVERT 5.5V 16QFN

  • 数据手册
  • 价格&库存
NLSF3T126MNR2 数据手册
NLSF3T126 Quad Bus Buffer with 3−State Control Inputs The NLSF3T126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The NLSF3T126 requires the 3−state control input (OE) to be set Low to place the output into high impedance. The T126 inputs are compatible with TTL levels. This device can be used as a level converter for interfacing 3.3 V to 5.0 V, because it has full 5.0 V CMOS level output swings. The NLSF3T126 input structures provide protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. http://onsemi.com 1 QFN−16 CASE 485G MARKING DIAGRAM ÇÇÇ ÇÇÇ 16 1 Features • • • • • • • • • • • • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 4.0 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model; > 2000 V, Machine Model > 200 V Chip Complexity: 72 FETs or 18 Equivalent Gates Pb−Free Package is Available* NLSF T126 ALYW G G NLSFT126 = Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NLSF3T126MNR2 Package Shipping† QFN−16 3000/Tape & Reel FUNCTION TABLE NLSF3T126MNR2G Inputs Output A OE Y L H X H H L L H Z QFN−16 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 5 1 Publication Order Number: NLSF3T126/D NLSF3T126 A1 OE1 A2 OE2 A3 OE3 A4 OE4 16 1 A1 Y1 16 OE1 VCC 15 14 OE4 Exposed Pad (EP) 13 15 5 4 3 7 8 Y3 9 10 12 Y1 1 12 A4 NC 2 11 NC OE2 3 10 Y4 A2 4 9 Y2 Y4 5 13 Y2 Figure 1. Logic Diagram Active−High Output Enables 6 7 GND Y3 OE3 8 A3 Figure 2. QFN − 16 Pinout (Top View) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage VCC –0.5 to +7.0 V DC Input Voltage Vin –0.5 to +7.0 V Vout –0.5 to +7.0 –0.5 to VCC +0.5 V Input Diode Current IIK −20 mA Output Diode Current (VOUT < GND; VOUT > VCC) IOK ±20 mA DC Output Current, per Pin Iout ±25 mA DC Supply Current, VCC and GND Pins ICC ±75 mA PD 500 mW Tstg –65 to +150 °C DC Output Voltage Output in 3−State High or Low State Power Dissipation in Still Air, QFN Packages Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit DC Supply Voltage VCC 2.0 5.5 V DC Input Voltage Vin 0 5.5 V Vout 0 0 5.5 VCC V TA −40 +85 °C tr, tf 0 20 ns/V DC Output Voltage Output in 3−State High or Low State Operating Temperature Input Rise and Fall Time VCC = 5.0 V ± 0.5 V http://onsemi.com 2 This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. NLSF3T126 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS Parameter Test Conditions Symbol Minimum High−Level Input Voltage 2.3 V ± 0.3 V 3.3 V ± 0.3 V 5.0 V ± 0.5 V VIH Maximum Low−Level Input Voltage 2.3 V ± 0.3 V 3.3 V ± 0.3 V 5.0 V ± 0.5 V VIL Minimum High−Level Output Voltage VIN = VIH or VIL VOL @ IOL, 50 mA VIN = VIH or VIL IOH = −50 mA VOH Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = −2.0 mA IOH = −4.0 mA IOH = −8.0 mA VOL @ IOL, 50 mA VIN = VIH or VIL IOL = 50 mA VOL VIN = VIH or VIL IOL = 2.0 mA IOL = 4.0 mA IOL = 8.0 mA VCC (V) TA ≤ 85°C TA = 25°C Min Typ Max 0.5 VCC 0.4 VCC 0.44 VCC Min 0.3 VCC 0.18 VCC 0.18 VCC 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 1.82 2.58 3.94 Max 0.5 VCC 0.4 VCC 0.44 VCC 2.0 3.0 4.5 2.0 3.0 4.5 0.0 0.0 0.0 TA ≤ 125°C Min Max 0.5 VCC 0.4 VCC 0.44 VCC 0.3 VCC 0.18 VCC 0.18 VCC V 0.3 VCC 0.18 VCC 0.18 VCC 1.9 2.9 4.4 1.9 2.9 4.4 1.72 2.48 3.80 1.60 2.34 3.66 Unit V V 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 2.0 3.0 4.5 0.36 0.36 0.36 0.44 0.44 0.44 0.52 0.52 0.52 V Maximum Input Leakage Current VIN = 5.5 V or GND IIN 0 to 5.5 ±0.1 ±1.0 ±1.0 mA Maximum Quiescent Supply Current VIN = VCC or GND ICC 5.5 2.0 20 40 mA Quiescent Supply Current Input: VIN = 3.4 V ICCT 5.5 1.35 1.50 1.65 mA Maximum 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND IOZ 5.5 ±0.25 ±2.5 ±2.5 mA Output Leakage Current VOUT = 5.5 V IOPD 0.0 0.5 5.0 10 mA http://onsemi.com 3 NLSF3T126 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ Î ÎÎ Î ÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = ≤ 85°C TA ≤ 125°C Typ Max Min Max Min Max Unit TA = 25°C Test Conditions Symbol Min VCC = 2.3 ± 0.3 V CL = 15 pF tPLH, tPHL 1.0 14.5 16.9 1.0 18.1 1.0 19.2 ns 1.0 1.0 5.6 8.1 8.0 11.5 1.0 1.0 9.5 13.0 1.0 1.0 12.0 16.0 ns 1.0 1.0 3.8 5.3 5.5 7.5 1.0 1.0 6.5 8.5 1.0 1.0 8.5 10.5 1.0 14.8 16.2 1.0 17.4 1.0 19.3 ns 1.0 1.0 5.4 7.9 8.0 11.5 1.0 1.0 9.5 13.0 1.0 1.0 11.5 15.0 ns 1.0 1.0 3.6 5.1 5.1 7.1 1.0 1.0 6.0 8.0 1.0 1.0 7.5 9.5 1.0 15.4 18.0 1.0 19.8 1.0 22.0 ns 1.0 9.5 13.2 1.0 15.0 1.0 18.0 ns 1.0 6.1 8.8 1.0 10.0 1.0 12.0 ns ns Parameter Maximum Propagation Delay, A to Y VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF Maximum Output Enable TIme, OE to Y VCC = 2.3 ± 0.3 V CL = 15 pF VCC = 3.3 ± 0.3 V CL = 15 pF RL = 1.0 kW CL = 50 pF tPZL, tPZH VCC = 5.0 ± 0.5 V CL = 15 pF RL = 1.0 kW CL = 50 pF Maximum Output Disable Time, OE to Y VCC = 2.3 ± 0.3 V CL = 15 pF VCC = 3.3 ± 0.3 V CL = 50 pF RL = 1.0 kW tPLZ, tPHZ VCC = 5.0 ± 0.5 V CL = 50 pF RL = 1.0 kW Output−to−Output Skew VCC = 3.3 ± 0.3 V CL = 50 pF (Note 1) tOSLH, tOSHL VCC = 5.0 ± 0.5 V CL = 50 pF (Note 1) Maximum Input Capacitance Cin Maximum 3−State Output Capacitance (Output in High Impedance State) 1.5 1.5 2.0 1.0 1.0 1.5 10 10 10 4.0 Cout 6.0 pF pF Typical @ 25°C, VCC = 5.0 V Power Dissipation Capacitance (Note 2) 15 CPD pF 1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|. 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 4 (per buffer). CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V) TA = 25°C Symbol Typ Max Unit Quiet Output Maximum Dynamic VOL VOLP 0.3 0.8 V Quiet Output Minimum Dynamic VOL VOLV −0.3 −0.8 V Minimum High Level Dynamic Input Voltage VIHD 3.5 V Maximum Low Level Dynamic Input Voltage VILD 1.5 V Characteristic http://onsemi.com 4 NLSF3T126 SWITCHING WAVEFORMS OE 3.0V A 1.5V tPHL tPLH Y 1.5V 3.0V 1.5V tPZL GND tPZH VOL VOL + 0.3V tPHZ VOH − 0.3V 1.5V Y Figure 3. HIGH IMPEDANCE Figure 4. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST HIGH IMPEDANCE 1.5V Y VOH GND tPLZ DEVICE UNDER TEST CL* *Includes all probe and jig capacitance OUTPUT 1 kW CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 5. Test Circuit Figure 6. Test Circuit http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS QFN16 3x3, 0.5P CASE 485G ISSUE G 1 SCALE 2:1 DATE 08 OCT 2021 GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXXX A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04795D QFN16 3X3, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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