NLSV4T240MUTAG

NLSV4T240 4-Bit Dual-Supply Inverting Level Translator The NLSV4T240 is a 4−bit configurable dual−supply voltage level translator. The input An and output Bn ports are designed to track two different power supply rails, VCCA and VCCB respectively. Both supply rails are configurable from 0.9 V to 4.5 V allowing universal low−voltage translation from the input An to the output Bn port. http://onsemi.com MARKING DIAGRAM Features • • • • • • • • • Wide VCCA and VCCB Operating Range: 0.9 V to 4.5 V High−Speed w/ Balanced Propagation Delay Inputs and Outputs have OVT Protection to 4.5 V Non−preferential VCCA and VCCB Sequencing Outputs at 3−State until Active VCC is Reached Power−Off Protection Outputs Switch to 3−State with VCCB at GND Ultra−Small Packaging: 1.7 mm x 2.0 mm UQFN12 This is a Pb−Free Device 1 WB = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT OE Typical Applications VCCA 1 • Mobile Phones, PDAs, Other Portable Devices A1 Important Information • ESD Protection for All Pins: HBM (Human Body Model) > 6000 V VCCA 11 VCCB 2 10 B1 A2 3 9 B2 A3 4 8 B3 A4 5 7 B4 VCCB A1 B1 A2 B2 B3 A4 B4 12 6 GND (Top View) ORDERING INFORMATION Device A3 WBMG G UQFN12 MU SUFFIX CASE 523AE NLSV4T240MUTAG Package Shipping† UQFN12 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. OE Figure 1. Logic Diagram © Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 2 1 Publication Order Number: NLSV4T240/D NLSV4T240 TRUTH TABLE PIN ASSIGNMENT Inputs PIN FUNCTION VCCA Input Port DC Power Supply VCCB Output Port DC Power Supply GND OE Outputs An Bn L L H Ground L H L An Input Port H X 3−State Bn Output Port OE Output Enable MAXIMUM RATINGS Symbol VCCA, VCCB VI VC VO Rating Value DC Supply Voltage Condition Unit −0.5 to +5.5 V An −0.5 to +5.5 V OE −0.5 to +5.5 V (Power Down) Bn −0.5 to +5.5 (Active Mode) Bn −0.5 to +5.5 V (Tri−State Mode) Bn −0.5 to +5.5 V DC Input Voltage Control Input DC Output Voltage VCCA = VCCB = 0 V IIK DC Input Diode Current −20 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA IO DC Output Source/Sink Current ±50 mA ICCA, ICCB DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Symbol VCCA, VCCB Parameter Bus Input Voltage VC Control Input VIO Bus Output Voltage Dt / DV Max Unit 0.9 4.5 V GND 4.5 V OE GND 4.5 V Bn GND 4.5 V (Active Mode) Bn GND VCCB V (Tri−State Mode) Bn GND 4.5 V −40 +85 °C 0 10 nS Positive DC Supply Voltage VI TA Min (Power Down Mode) Operating Temperature Range Input Transition Rise or Rate VI, from 30% to 70% of VCC; VCC = 3.3 V ±0.3 V http://onsemi.com 2 NLSV4T240 DC ELECTRICAL CHARACTERISTICS −405C to +855C Symbol VIH VIL VOH Parameter Test Conditions Input HIGH Voltage (An, OE) Input LOW Voltage (An, OE) Output HIGH Voltage Min Max Unit 3.6 – 4.5 0.9 – 4.5 V 2.2 − 2.7 – 3.6 2.0 − 2.3 – 2.7 1.6 − 1.4 − 2.3 0.65 * VCCA − 0.9 – 1.4 0.9 * VCCA − 0.9 – 4.5 − 0.8 2.7 – 3.6 − 0.8 2.3 – 2.7 − 0.7 1.4 − 2.3 − 0.35 * VCCA 0.9 – 1.4 − 0.1 * VCCA IOH = −100 mA; VI = VIL 0.9 – 4.5 0.9 – 4.5 VCCB – 0.2 − IOH = −0.5 mA; VI = VIL 0.9 0.9 0.75 * VCCB − IOH = −2 mA; VI = VIL 1.4 1.4 1.05 − IOH = −6 mA; VI = VIL 1.65 1.65 1.25 − 2.3 2.3 2.0 − 2.3 2.3 1.8 − 2.7 2.7 2.2 − 2.3 2.3 1.7 − IOH = −18 mA; VI = VIL Output LOW Voltage VCCB (V) 3.6 – 4.5 IOH = −12 mA; VI = VIL VOL VCCA (V) 3.0 3.0 2.4 − IOH = −24 mA; VI = VIL 3.0 3.0 2.2 − IOL = 100 mA; VI = VIH 0.9 – 4.5 0.9 – 4.5 − 0.2 IOL = 0.5 mA; VI = VIH 1.1 1.1 − 0.3 IOL = 2 mA; VI = VIH 1.4 1.4 − 0.35 IOL = 6 mA; VI = VIH 1.65 1.65 − 0.3 IOL = 12 mA; VI = VIH 2.3 2.3 − 0.4 2.7 2.7 − 0.4 2.3 2.3 − 0.6 3.0 3.0 − 0.4 IOL = 18 mA; VI = VIH IOL = 24 mA; VI = VIH V V V 3.0 3.0 − 0.55 Input Leakage Current VI = VCCA or GND 0.9 – 4.5 0.9 – 4.5 −1.0 1.0 mA IOFF Power−Off Leakage Current OE = 0 V 0 0.9 – 4.5 0.9 – 4.5 0 −1.0 −1.0 1.0 1.0 mA ICCA Quiescent Supply Current VI = VCCA or GND; IO = 0, VCCA = VCCB 0.9 – 4.5 0.9 − 4.5 − 2.0 mA ICCB Quiescent Supply Current VI = VCCA or GND; IO = 0, VCCA = VCCB 0.9 – 4.5 0.9 − 4.5 − 2.0 mA ICCA + ICCB Quiescent Supply Current VI = VCCA or GND; IO = 0, VCCA = VCCB 0.9 – 4.5 0.9 – 4.5 − 4.0 mA II DICCA Increase in ICC per Input Voltage, Other Inputs at VCCA or GND VI = VCCA – 0.6 V; VI = VCCA or GND 4.5 3.6 4.5 3.6 − 10 5.0 mA DICCB Increase in ICC per Input Voltage, Other Inputs at VCCA or GND VI = VCCA – 0.6 V; VI = VCCA or GND 4.5 3.6 4.5 3.6 − 10 5.0 mA I/O Tri−State Output Leakage Current TA = 25°C, OE = 0 V 0.9 – 4.5 0.9 – 4.5 −1.0 1.0 mA IOZ http://onsemi.com 3 NLSV4T240 TOTAL STATIC POWER CONSUMPTION (ICCA + ICCB) −405C to +855C VCCB (V) 4.5 VCCA (V) Min 3.3 Max Min 2.8 Max Min 1.8 Max Min 0.9 Max Min Max Unit 4.5 2 2 2 2 < 1.5 μA 3.3 2 2 2 2 < 1.5 μA 2.8