NLU1GT125AMUTCG

NLU1GT125 Non-Inverting 3-State Buffer, TTL Level LSTTL−Compatible Inputs The NLU1GT125 MiniGatet is an advanced CMOS high−speed non−inverting buffer in ultra−small footprint. The NLU1GT125 requires the 3−state control input OE to be set High to place the output in the high impedance state. The device input is compatible with TTL−type input thresholds and the output has a full 5.0 V CMOS level output swing. The NLU1GT125 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. Features • • • • • • • • • High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Input: VIL = 0.8 V; VIH = 2.0 V CMOS−Compatible Output: VOH > 0.8 VCC; VOL < 0.1 VCC @ Load Power Down Protection Provided on inputs Balanced Propagation Delays Ultra−Small Packages NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices OE 1 6 VCC IN A 2 5 NC GND 3 4 OUT Y www.onsemi.com MARKING DIAGRAMS 1 UDFN6 1.2 x 1.0 CASE 517AA 7M UDFN6 1.0 x 1.0 CASE 517BX LM UDFN6 1.45 x 1.0 CASE 517AQ DM 1 1 7 M = Device Marking = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Figure 1. Pinout (Top View) OE IN A OUT Y Figure 2. Logic Symbol FUNCTION TABLE Input Output A OE Y L H X L L H L H Z © Semiconductor Components Industries, LLC, 2016 January, 2019 − Rev. 7 PIN ASSIGNMENT 1 OE 2 IN A 3 GND 4 OUT Y 5 NC 6 VCC 1 Publication Order Number: NLU1GT125/D NLU1GT125 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V DC Output Voltage −0.5 to +7.0 V VIN < GND −20 mA VOUT < GND ±20 mA VOUT Parameter IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Source/Sink Current ±12.5 mA ICC DC Supply Current Per Supply Pin ±25 mA IGND DC Ground Current per Ground Pin ±25 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias 150 °C MSL Moisture Sensitivity FR Flammability Rating ILATCHUP Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Latchup Performance Above VCC and Below GND at 125°C (Note 2) mA ±500 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.65 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage 0 5.5 V Output Voltage 0 5.5 V −55 +125 °C 0 0 100 20 ns/V VOUT TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V www.onsemi.com 2 NLU1GT125 DC ELECTRICAL CHARACTERISTICS TA = 25 5C Symbol Parameter Conditions VCC (V) Min 1.4 2.0 VIH Low−Level Input Voltage 3.0 4.5 to 5.5 VIL Low−Level Input Voltage 3.0 4.5 to 5.5 VOH High−Level Output Voltage VOL Low−Level Output Voltage Typ Max TA = +855C TA = −555C to +1255C Min Min 1.4 2.0 0.53 0.8 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA Max 3.0 4.5 0 0 Max 1.4 2.0 0.53 0.8 V 0.53 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V IIN Input Leakage Current 0 v VIN v 5.5 V 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Quiescent Supply Current 0 v VIN v VCC 5.5 1.0 20 40 mA ICCT Quiescent Supply Current VIN = 3.4 V Other Input: VCC or GND 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA IOZ 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 0.0 ±0.25 ±2.5 ±2.5 mA TA = +855C TA = −555C to +1255C Min AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) VCC (V) Test Condition 3.0 to 3.6 TA = 25 5C Max Unit 9.5 13.0 12.0 16.0 ns 1.0 1.0 6.5 8.5 8.5 10.5 8.0 11.5 1.0 1.0 9.5 13.0 11.5 15.0 3.6 5.1 5.1 7.1 1.0 1.0 6.0 8.0 7.5 9.5 CL = 15 pF CL = 50 pF 6.5 8.0 9.7 13.2 1.0 1.0 11.5 15.0 14.5 18.5 CL = 15 pF CL = 50 pF 4.8 7.0 6.8 8.8 1.0 1.0 8.0 10.0 10.0 12.0 Input Capacitance 4 10 10 10.0 COUT 3−State Output Capacitance (Output in High Impedance State) 6 pF CPD Power Dissipation Capacitance (Note 3) 14 pF Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ CIN Parameter Propagation Delay, A to Y (Figures 3 and 5) Output Enable Time, OE to Y (Figures 4 and 6) Output Disable Time, OE to Y (Figures 4 and 6) Min Typ Max Min Max CL = 15 pF CL = 50 pF 5.6 8.1 8.0 11.5 1.0 1.0 4.5 to 5.5 CL = 15 pF CL = 50 pF 3.8 5.3 5.5 7.5 3.0 to 3.6 CL = 15 pF CL = 50 pF 5.4 7.9 4.5 to 5.5 CL = 15 pF CL = 50 pF 3.0 to 3.6 4.5 to 5.5 5.0 ns ns pF 3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC. www.onsemi.com 3 NLU1GT125 SWITCHING WAVEFORMS OE VCC tPHL tPLH GND tPZL 50% A VCC 50% GND tPLZ HIGH IMPEDANCE 50% VCC Y VOL + 0.3V tPZH tPHZ 50% VCC Y VOH − 0.3V 50% VCC Y Figure 3. Switching Waveforms HIGH IMPEDANCE Figure 4. MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST DEVICE UNDER TEST CL * *Includes all probe and jig capacitance OUTPUT 1 kW CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 5. Test Circuit Figure 6. Test Circuit INPUT Figure 7. Input Equivalent Circuit ORDERING INFORMATION Package Shipping† NLU1GT125MUTCG UDFN6, 1.2 x 1.0, 0.4P (Pb−Free) 3000 / Tape & Reel NLU1GT125AMUTCG, NLVU1GT125AMUTCG* UDFN6, 1.45 x 1.0, 0.5P (Pb−Free) 3000 / Tape & Reel NLU1GT125CMUTCG UDFN6, 1.0 x 1.0, 0.35P (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6, 1.45x1.0, 0.5P CASE 517AQ ISSUE O 1 SCALE 4:1 A B D DATE 15 MAY 2008 L L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. L1 PIN ONE REFERENCE 0.10 C ÉÉÉ ÉÉÉ DETAIL A E OPTIONAL CONSTRUCTIONS ÉÉ ÉÉ EXPOSED Cu TOP VIEW 0.10 C DETAIL B MOLD CMPD DETAIL B 0.05 C 6X DIM A A1 A2 b D E e L L1 OPTIONAL CONSTRUCTIONS A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.07 REF 0.20 0.30 1.45 BSC 1.00 BSC 0.50 BSC 0.30 0.40 −−− 0.15 MOUNTING FOOTPRINT 0.05 C A1 SIDE VIEW A2 e 6X C SEATING PLANE 6X 0.30 PACKAGE OUTLINE L 1.24 3 1 DETAIL A 6X 0.53 6 4 6X BOTTOM VIEW b 0.10 C A B 0.05 C NOTE 3 1 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. GENERIC MARKING DIAGRAM* XM X M = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30313E UDFN6, 1.45x1.0, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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