NLV74HC157ADTR2G

MC74HC157A Quad 2-Input Data Selectors/Multiplexers High−Performance Silicon−Gate CMOS The MC74HC157A is identical in pinout to the LS157. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. This device routes 2 nibbles (A or B) to a single port (Y) as determined by the Select input. The data is presented at the outputs in noninverted form. A high level on the Output Enable input sets all four Y outputs to a low level. http://onsemi.com SOIC−16 D SUFFIX CASE 751B Features • • • • • • • • • TSSOP−16 DT SUFFIX CASE 948F PIN ASSIGNMENT Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 mA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 82 FETs or 20.5 Equivalent Gates NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant NIBBLE A INPUTS 11 A2 7 9 3 B0 NIBBLE B INPUTS 4 14 A3 12 6 B1 Y0 Y1 Y2 DATA OUTPUTS Y3 PIN 16 = VCC PIN 8 = GND 1 SELECT OUTPUT ENABLE B0 3 14 VCC OUTPUT ENABLE A3 Y0 4 13 B3 A1 5 12 Y3 B1 6 11 A2 Y1 7 10 B2 GND 8 9 Y2 MARKING DIAGRAMS 16 16 HC 157A ALYWG G HC157AG AWLYWW 1 TSSOP−16 FUNCTION TABLE 13 B3 15 A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) 10 B2 16 2 SOIC−16 5 A1 1 A0 1 2 A0 SELECT 15 Inputs Output Enable Select Outputs Y0 − Y3 H L L X L H L A0 −A3 B0 −B3 X = don’t care A0−A3, B0−B3 = the levels of the respective Data−Word Inputs. Figure 1. Logic Diagram ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 12 1 Publication Order Number: MC74HC157A/D MC74HC157A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter Value Unit –0.5 to +7.0 V DC Input Voltage (Referenced to GND) –0.5 to VCC + 0.5 V DC Output Voltage (Referenced to GND) –0.5 to VCC + 0.5 V VCC DC Supply Voltage (Referenced to GND) Vin Vout Iin DC Input Current, per Pin ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or TSSOP Package) SOIC Package† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. _C 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating: SOIC Package: –7 mW/_C from 65_ to 125_C TSSOP Package: −6.1 mW/_C from 65_ to 125_C RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V Min Max Unit 2.0 6.0 V 0 VCC V –55 +125 _C 0 0 0 1000 500 400 ns Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. http://onsemi.com 2 MC74HC157A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V –55 to 25_C v 85_C v 125_C Unit VIH Minimum High−Level Input Voltage Vout = VCC – 0.1 V |Iout| v 20 mA 2.0 3.0 4.5 6.0 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 V VIL Maximum Low−Level Input Voltage Vout = 0.1 V |Iout| v 20 mA 2.0 3.0 4.5 6.0 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 V VOH Minimum High−Level Output Voltage Vin = VIH |Iout| v 20 mA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.2 3.7 5.2 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.4 0.4 0.4 |Iout| v 2.4 mA |Iout| v 6.0 mA |Iout| v 7.8 mA Vin = VIH VOL Vin = VIL |Iout| v 20 mA Maximum Low−Level Output Voltage |Iout| v 2.4 mA |Iout| v 6.0 mA |Iout| v 7.8 mA Vin = VIL V Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 mA IOZ Maximum Three−State Leakage Current Output in High−Impedance State Vin = VIL or VIH Vout = VCC or GND 6.0 ±0.5 ±5.0 ±10 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 mA 6.0 4.0 40 160 mA AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol Parameter VCC V –55 to 25_C v 85_C v 125_C Unit tPLH, tPHL Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 4) 2.0 3.0 4.5 6.0 105 65 21 18 130 85 26 22 160 115 32 27 ns tPLH, tPHL Maximum Propagation Delay, Select to Output Y (Figures 2 and 4) 2.0 3.0 4.5 6.0 110 70 22 19 140 90 28 24 165 115 33 28 ns tPLH, tPHL Maximum Propagation Delay, Output Enable to Output Y (Figures 3 and 4) 2.0 3.0 4.5 6.0 100 60 20 17 125 80 25 21 150 110 30 26 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 22 19 ns − 10 10 10 pF Cin Maximum Input Capacitance Typical @ 25°C, VCC = 5.0 V CPD 33 Power Dissipation Capacitance (Per Package)* * Used to determine the no−load dynamic power consumption: P D = CPD VCC http://onsemi.com 3 2f + ICC VCC . pF MC74HC157A PIN DESCRIPTIONS INPUTS A0, A1, A2, A3 (Pins 2, 5, 11, 14) The data present on these pins is in its noninverted form. For the Output Enable input at a high level, the outputs are at a low level. Nibble A inputs. The data present on these pins is transferred to the outputs when the Select input is at a low level and the Output Enable input is at a low level. The data is presented to the outputs in noninverted form. CONTROL INPUTS Select (Pin 1) Nibble select. This input determines the data word to be transferred to the outputs. A low level on this input selects the A inputs and a high level selects the B inputs. B0, B1, B2, B3 (Pins 3, 6, 10, 13) Nibble B inputs. The data present on these pins is transferred to the outputs when the Select input is at a high level and the Output Enable input is at a low level. The data is presented to the outputs in noninverted form. Output Enable (Pin 15) Output Enable input. A low level on this input allows the selected input data to be presented at the outputs. A high level on this input sets all outputs to a low level. OUTPUTS Y0, Y1, Y2, Y3 (Pins 4, 7, 9, 12) Data outputs. The selected input Nibble is presented at these outputs when the Output Enable input is at a low level. SWITCHING WAVEFORMS tr tr tf 90% 50% 10% INPUT A OR B GND 90% 50% 10% OUTPUT Y tTLH tTHL tTLH Figure 2. HC157A GND tPHL tPLH tPHL 90% 50% 10% VCC 90% 50% 10% SELECT tPLH OUTPUT Y tf VCC tTHL Figure 3. Y versus Selected, Noninverted tr tf VCC 90% 50% 10% OUTPUT ENABLE GND tPLH tPHL 90% 50% 10% OUTPUT Y tTLH tTHL Figure 4. HC157A TEST POINT OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance Figure 5. Test Circuit http://onsemi.com 4 MC74HC157A EXPANDED LOGIC DIAGRAM 2 A0 B0 A1 B1 NIBBLE OUTPUTS 5 7 6 Y1 11 A3 B3 SELECT Y0 A2 B2 OUTPUT ENABLE 4 3 9 Y2 10 DATA OUTPUTS 14 12 Y3 13 15 1 ORDERING INFORMATION Package Shipping† MC74HC157ADG SOIC−16 (Pb−Free) 48 Units / Rail MC74HC157ADR2G SOIC−16 (Pb−Free) 2500 / Tape & Reel MC74HC157ADTR2G TSSOP−16 (Pb−Free) 2500 / Tape & Reel NLV74HC157ADR2G* SOIC−16 (Pb−Free) 2500 / Tape & Reel NLV74HC157ADTR2G* TSSOP−16 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16 DATE 19 OCT 2006 1 SCALE 2:1 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 16 XXXX XXXX ALYW 1 1 0.65 PITCH 16X 0.36 DOCUMENT NUMBER: DESCRIPTION: 16X 1.26 98ASH70247A TSSOP−16 DIMENSIONS: MILLIMETERS XXXX A L Y W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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