NLX3G14BMX1TCG

NLX3G14 Triple Schmitt-Trigger Inverter The NLX3G14 MiniGatet is an advanced high−speed CMOS triple Schmitt−trigger inverter in ultra−small footprint. The NLX3G14 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. The NLX3G14 can be used to enhance noise immunity or to square up slowly changing waveforms. www.onsemi.com MARKING DIAGRAMS Features • • • • • • • Designed for 1.65 V to 5.5 V VCC Operation Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C 24 Balanced Output Source and Sink Capability Balanced Propagation Delays Overvoltage Tolerant (OVT) Input and Output Pins Ultra−Small Packages These are Pb−Free Devices UDFN8 1.45 x 1.0 CASE 517BZ 1 UDFN8 1.6 x 1.0 CASE 517BY 1 UDFN8 1.95 x 1.0 CASE 517CA IN A1 8 1 2M XM XM 1 VCC OUT Y3 2 7 OUT Y1 IN A2 3 6 IN A3 F, AC, 2 = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION GND 4 5 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. OUT Y2 Figure 1. Pinout (Top View) IN A1 1 OUT Y1 IN A2 1 OUT Y2 IN A3 1 OUT Y3 PIN ASSIGNMENT Figure 2. Logic Symbol FUNCTION TABLE A L H IN A1 2 OUT Y3 3 IN A2 4 GND 5 OUT Y2 Y 6 IN A3 H L 7 OUT Y1 8 VCC © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 3 1 1 Publication Order Number: NLX3G14/D NLX3G14 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V DC Output Voltage −0.5 to +7.0 V VIN < GND −50 mA VOUT < GND ±50 mA VOUT Parameter IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias 150 °C MSL FR VESD ILATCHUP Moisture Sensitivity Level 1 Flammability Rating Oxygen Index: 28 to 34 ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Latchup Performance Above VCC and Below GND at 125°C (Note 5) UL 94 V−0 @ 0.125 in > 2000 > 200 N/A V ±500 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD22−A114−A. 3. Tested to EIA / JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.65 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage 0 5.5 V Output Voltage 0 5.5 V −55 +125 °C 0 0 0 No Limit No Limit No Limit ns/V VOUT TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate VCC = 2.5 V ± 0.2 V VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NLX3G14 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions TA = 25 5C TA = +855C TA = −555C to +1255C VCC (V) Min Typ Max Min Max Min Max Unit VT+ Positive Threshold Voltage 1.65 2.3 2.7 3.0 3.0 4.5 0.6 1.0 1.2 1.3 1.9 2.2 1.0 1.5 1.7 1.9 2.7 3.3 1.4 1.8 2.0 2.2 3.1 3.6 0.6 1.0 1.2 1.3 1.9 2.2 1.4 1.8 2.0 2.2 3.1 3.6 0.6 1.0 1.2 1.3 1.9 2.2 1.4 1.8 2.0 2.2 3.1 3.6 V VT− Negative Threshold Voltage 1.65 2.3 2.7 3.0 3.0 4.5 0.2 0.4 0.5 0.6 1.0 1.2 0.5 0.75 0.87 1.0 1.5 1.9 0.8 1.15 1.4 1.5 2.0 2.3 0.2 0.4 0.5 0.6 1.0 1.2 0.8 1.15 1.4 1.5 2.0 2.3 0.2 0.4 0.5 0.6 1.0 1.2 0.8 1.15 1.4 1.5 2.0 2.3 V VH Hysteresis Voltage 1.65 2.3 2.7 3.0 3.0 4.5 0.1 0.25 0.3 0.4 0.6 0.7 0.48 0.75 0.83 0.93 1.2 1.4 0.9 1.1 1.15 1.2 1.5 1.7 0.1 0.25 0.3 0.4 0.6 0.7 0.9 1.1 1.15 1.2 1.5 1.7 0.1 0.25 0.3 0.4 0.6 0.7 0.9 1.1 1.15 1.2 1.5 1.7 V VOH Minimum High−Level Output Voltage VIN v VT−MIN IOH = −100 mA 1.65 to 5.5 VCC − 0.1 VCC VCC − 0.1 VCC − 0.1 VIN v VT−MIN IOH = −4 mA IOH = −8 mA IOH = −12 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 2.3 2.7 3.0 3.0 4.5 1.29 1.9 2.2 2.4 2.3 3.8 1.52 2.1 2.4 2.7 2.5 4.0 1.29 1.9 2.2 2.4 2.3 3.8 1.29 1.8 2.1 2.3 2.2 3.7 VIN w VT+MAX IOL = 100 mA 1.65 to 5.5 0 0.1 0.1 0.1 VIN w VT+MAX IOH = 4 mA IOH = 8 mA IOH = 12 mA IOH = 16 mA IOH = 24 mA IOH = 32 mA 1.65 2.3 2.7 3.0 3.0 4.5 0.08 0.2 0.22 0.28 0.38 0.42 0.24 0.3 0.4 0.4 0.55 0.55 0.24 0.3 0.4 0.4 0.55 0.55 0.24 0.4 0.5 0.5 0.55 0.65 0 to 5.5 ±0.1 ±1.0 ±1.0 mA 0 1.0 10 10 mA 5.5 1.0 10 10 mA VOL Maximum Low−Level Output Voltage Input Leakage Current 0 v VIN v 5.5 V IOFF Power−Off Output Leakage Current VOUT = 5.5 V ICC Quiescent Supply Current 0 v VIN v VCC IIN V V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NLX3G14 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Symbol tPLH, tPHL Parameter Propagation Delay, Input A to Output Y VCC (V) Test Condition 2.3−2.7 3.0−3.6 4.5−5.5 TA = 25 5C TA = +855C TA = −555C to +1255C Min Typ Max Min Max Min Max Unit RL = 1 MW, CL = 15 pF 1.8 4.3 7.4 1.8 8.1 1.8 9.1 ns RL = 1 MW, CL = 15 pF 1.5 3.3 5.0 1.5 5.5 1.5 6.5 RL = 500 W, CL = 50 pF 1.8 4.0 6.0 1.8 6.6 1.8 7.6 RL = 1 MW, CL = 15 pF 1.0 2.7 4.1 1.0 4.5 1.0 5.5 RL = 500 W, CL = 50 pF 1.2 3.2 4.9 1.2 5.4 1.2 6.4 CIN Input Capacitance 5.5 VIN = 0 V or VCC 2.5 pF CPD Power Dissipation Capacitance (Note 6) 3.3 5.5 10 MHz VIN = 0 V or VCC 11 12.5 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC. VCC A or B 50% GND tPLH Y tPHL 50% VCC Figure 3. Switching Waveforms VCC PULSE GENERATOR DUT RT CL RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit www.onsemi.com 4 RL NLX3G14 VT, TYPICAL INPUT THRESHOLD VOLTAGE (V) 4 3 2 VHtyp 1 2 2.5 3 3.5 3.6 VCC, POWER SUPPLY VOLTAGE (V) VHtyp = (VT + typ) − (VT − typ) Figure 5. Typical Input Threshold, VT+, VT− versus Power Supply Voltage VH VCC VT+ VT− VIN VCC VH VT+ VT− VIN GND GND VOH VOH VOUT Vout VOL VOL (a) A Schmitt−Trigger Squares Up Inputs With Slow Rise and Fall Times (b) A Schmitt−Trigger Offers Maximum Noise Immunity Figure 6. Typical Schmitt−Trigger Applications ORDERING INFORMATION Package Shipping† NLX3G14DMUTCG (In Development) UDFN8, 1.95 x 1.0, 0.5P (Pb−Free) 3000 / Tape & Reel NLX3G14EMUTCG (In Development) UDFN8, 1.6 x 1.0, 0.4P (Pb−Free) 3000 / Tape & Reel NLX3G14FMUTCG UDFN8, 1.45 x 1.0, 0.35P (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN8, 1.45x1, 0.35P CASE 517BZ−01 ISSUE O SCALE 4:1 2X ÉÉ ÉÉ ÉÉ 0.10 C 2X 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM TERMINAL TIP. 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. A B D PIN ONE REFERENCE DATE 18 MAY 2011 E DIM A A1 A3 b D E e L L1 TOP VIEW A3 0.05 C A 0.05 C A1 SIDE VIEW C GENERIC MARKING DIAGRAM* SEATING PLANE e/2 e 1 4 8 5 7X XM L L1 8X BOTTOM VIEW MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.15 0.25 1.45 BSC 1.00 BSC 0.35 BSC 0.25 0.35 0.30 0.40 b 0.10 M C A B 0.05 M C NOTE 3 1 X = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED SOLDERING FOOTPRINT* 7X 0.48 8X 0.22 1.18 0.53 1 PKG OUTLINE 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON56796E UDFN8, 1.45X1, 0.35P Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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