General Description
Features
The NM93C13/C14 is 256/1024, respectively, bits of CMOS
electrically erasable memory divided into 16/64 16-bit registers. They are fabricated using Fairchild Semiconductor’s
floating-gate CMOS process for high speed, high reliability
and low power. The NM93C13/C14 is available in an 8-pin
SO package to save board space.
The serial interface of the NM93C13/C14 is MICROWIRE™
compatible for simple interface to standard microcontrollers
and microprocessors. There are 7 instructions: Read, Erase/
Write Enable, Erase, Erase All, Write, Write All, and Erase/
Write Disable.
All programming cycles are completely self-timed for simplified operation. The ready/busy status is available on the DO
pin to indicate the completion of a programming cycle.
n Typical active current 400 µA; Typical standby current
25 µA
n Reliable CMOS floating gate technology
n 4.5V to 5.5V operation in all modes
n MICROWIRE compatible serial I/O
n Self-timed programming cycle
n Device status indication during programming mode
n 15 years data retention
n Endurance: 100,000 read/write cycles minimum
n Packages available: 8-pin DIP, 8-pin SO
Functional Diagram
NM93C13/C14
NM93C13/C14
256-/1024-Bit Serial EEPROM
NM93C13/C14 256-/1024-Bit Serial EEPROM
March 1997
DS011291-1
© 1997 Fairchild Semiconductor Corporation
www.fairchildsemi.com
DS011291
PrintDate=1997/07/28 PrintTime=12:26:12 10788 ds011291 Rev. No. 3
Proof
1
1
Connection Diagrams
Dual-In-Line Package (N)
and 8-Pin SO (M8)
Alternate SO Pinout (TM8)
NM93C14 Only
DS011291-2
DS011291-3
Top View
See Package NumberC8E and M08A
Alternate SO Pinout (TM8)
NM93C14 Only
See Package M08A
Ordering Information
Pin Names
Commercial Temp. Range (0˚C to +70˚C)
Order Number*
CS
NM93C13N/NM93C14N
SK
Serial Data Clock
NM93C13M8/NM93C14M8
DI
Serial Data Input
DO
Serial Data Output
NM93C14TM8
www.fairchildsemi.com
Chip Select
GND
Ground
VCC
Power Supply
2
PrintDate=1997/07/28 PrintTime=12:26:13 10788 ds011291 Rev. No. 3
Proof
2
Absolute Maximum Ratings
Ambient Storage Temperature
All Input or Output Voltages
with Respect to Ground
Lead Temp. (Soldering, 10 sec.)
ESD Rating
Operating Conditions
(Note 1)
Ambient Operating Temperature
NM93C13–NM93C14
Power Supply
−65˚C to +150˚C
+6.5V to −0.3V
0˚C to +70˚C
4.5V to 5.5V
+300˚C
2000V
DC and AC Electrical Characteristics (Note 2)
VCC = 5.0V ± 10% (unless otherwise specified)
ICC1
Symbol
Operating Current
Parameter
ICC3
Standby Current
IIL
Input Leakage
Conditions
CS = VIH, SK = 1 MHz
CS = 0V
VIN = 0V to VCC
Min
Max
Units
4
mA
IOL
Output Leakage
VIN = 0V to VCC
VIL
Input Low Voltage
VIH
Input High Voltage
2
VCC + 1
VOL1
Output Low Voltage
VOH1
Output High Voltage
VOL2
Output Low Voltage
200
µA
10
µA
−10
10
µA
−0.1
0.8
V
−10
IOL = 2.1 mA
IOH = −400 µA
0.4
V
0.2
V
1
MHz
2.4
IOL = 10 µA
IOH = −10 µA
V
VOH2
Output High Voltage
fSK
SK Clock Frequency
tSKH
SK High Time
(Note 3)
300
ns
tSKL
SK Low Time
(Note 3)
250
ns
tSKS
SK Setup Time
50
ns
tCS
Minimum CS Low Time
250
ns
tCSS
CS Setup Time
50
ns
tDH
D0 Hold Time
70
ns
tDIS
DI Setup Time
100
ns
tCSH
CS Hold Time
0
ns
tDIH
DI Hold Time
20
ns
tPD1
Output Delay to “1”
500
ns
tPD0
Output Delay to “0”
500
ns
tSV
CS to Status Valid
500
ns
tDF
CS to DO in TRI-STATE ®
100
ns
tWP
Write Cycle Time
10
ms
VCC − 0.2
CS = VIL
Capacitance (Note 4)
AC Test Conditions
TA = 25˚C f = 1 MHz
Symbol
Test
Output Load
Typ
Max
Units
COUT
Output Capacitance
5
pF
CIN
Input Capacitance
5
pF
1 TTL Gate and CL = 100 pF
Input Pulse Levels
0.4V to 2.4V
Timing Measurement Reference Level
Input
1V and 2V
Output
0.8V and 2V
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: 100% functional test; AC/DC parameters sample tested to 0.4% AQL.
Note 3: The SK frequency specification specifies a minimum SK clock period of 1 µs, therefore in an SK clock cycle tSKH + tSKL must be greater than or equal to
1 µs. For example, if the tSKL = 500 ns then the minimum tSKH = 500 ns in order to meet the SK frequency specification.
Note 4: This parameter is periodically sampled and not 100% tested.
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PrintDate=1997/07/28 PrintTime=12:26:16 10788 ds011291 Rev. No. 3
www.fairchildsemi.com
Proof
3
Functional Description
put on the data-in (DI) pin, CS must be brought low before
the next rising edge of the SK clock. This falling edge of CS
initiates the self-timed programming cycle. The DO pin indicates the READY/BUSY status of the chip if CS is brought
high after a minimum of 500 ns (tCS). DO = logical 0 indicates that programming is still in progress. DO = logical 1 indicates that the register at the address specified in the instruction has been written with the data pattern specified in
the instruction and the part is ready for another instruction.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in the memory array and set each bit to the logical “1”
state. The Erase All cycle is identical to the ERASE cycle except for the different op-code. As in the ERASE mode, the
DO pin indicates the READY/BUSY status of the chip if CS is
brought high after a minimum of 500 ns (tCS). The ERASE
ALL instruction is not required, see (Note 5) .
Write All (WRAL):
The NM93C13/C14 have 7 instructions as described below.
Note that the MSB of any instruction is a “1” and is viewed as
a start bit in the interface sequence. For the C13 and C14 the
next 8 bits carry the op code and the 6-bit address for register selection.
Read (READ):
The READ instruction outputs serial data on the DO pin. After a READ instruction is received, the instruction and address are decoded, followed by data transfer from the selected memory register into a 16-bit serial-out shift register. A
dummy bit (logical 0) precedes the 16-bit data output string.
Output data changes are initiated by a low to high transition
of the SK clock.
Erase/Write Enable (EWEN):
When VCC is applied to the part, it powers up in the Erase/
Write Disable (EWDS) state. Therefore, all programming
modes must be preceded by an Erase/Write Enable (EWEN)
instruction. Once an Erase/Write Enable instruction is executed, programming remains enabled until an Erase/Write
Disable (EWDS) instruction is executed or VCC is removed
from the part.
Erase (ERASE):
The ERASE instruction will program all bits in the specified
register to the logical “1” state. CS is brought low following
the loading of the last address bit. This falling edge of the CS
pin initiates the self-timed programming cycle.
The DO pin indicates the READY/BUSY status of the chip if
CS is brought high after a minimum of 500 ns (tCS).
DO = logical “0” indicates that programming is still in
progress. DO = logical “1” indicates that the register, at the
address specified in the instruction, has been erased, and
the part is ready for another instruction.
Write (WRITE):
The WRITE instruction is followed by 16 bits of data to be
written into the specified address. After the last bit of data is
The WRAL instruction will simultaneously program all registers with the data pattern specified in the instruction. As in
the WRITE mode, the DO pin indicates the READY/BUSY
status of the chip if CS is brought high after a minimum of
500 ns (tCS).
Erase/Write Disable (EWDS):
To protect against accidental data disturb, the Erase/Write
Disable (EWDS) instruction disables all programming modes
and should follow all programming operations. Execution of
a READ instruction is independent of both the EWEN and
EWDS instructions.
Note 5: The NM93C13/C14 devices do not require an “ERASE” or “ERASE
ALL” prior to the “WRITE” and “WRITE ALL” instructions. The “ERASE” and
“ERASE ALL” instructions are included to maintain compatibility with the
NMOS NMC9346.
Instruction Set for the NM93C13 and NM93C14
SB
Op Code
Address
READ
Instruction
1
10
A5–A0
Reads data stored in memory at specified address.
EWEN
1
00
11XXXX
Write enable must precede all programming modes.
ERASE
1
11
A5–A0
WRITE
1
01
A5–A0
ERAL
1
00
10XXXX
WRAL
1
00
01XXXX
EWDS
1
00
00XXXX
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Data
Comments
Erase selected register.
D15–D0
Writes selected register.
Erases all registers.
D15–D0
Writes all registers.
Disables all programming instructions.
4
PrintDate=1997/07/28 PrintTime=12:26:19 10788 ds011291 Rev. No. 3
Proof
4
Timing Diagrams
Synchronous Data Timing
DS011291-4
READ:
DS011291-5
*Address bits A5 and A4 become “don’t care” for NM93C13.
EWEN:
DS011291-6
*The NM93C13 and NM93C14 require a minimum of 9 clock cycles.
5
PrintDate=1997/07/28 PrintTime=12:26:20 10788 ds011291 Rev. No. 3
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Proof
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Timing Diagrams
(Continued)
EWDS:
DS011291-7
*The NM93C13 and NM93C14 require a minimum of 9 clock cycles.
WRITE:
DS011291-8
*Address bit A5 and A4 become “don’t care” for NM93C13.
WRAL:
DS011291-9
*The NM93C13 and NM93C14 require a minimum of 9 clock cycles.
www.fairchildsemi.com
6
PrintDate=1997/07/28 PrintTime=12:26:20 10788 ds011291 Rev. No. 3
Proof
6
Timing Diagrams
(Continued)
ERASE:
DS011291-10
*Address bits A5 and A4 are “don’t care” for NM93C13.
ERAL:
DS011291-11
Book
Extract
End
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PrintDate=1997/07/28 PrintTime=12:26:21 10788 ds011291 Rev. No. 3
www.fairchildsemi.com
Proof
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THIS PAGE IS IGNORED IN THE DATABOOK
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PrintDate=1997/07/28 PrintTime=12:26:21 10788 ds011291 Rev. No. 3
Proof
8
Physical Dimensions
inches (millimeters) unless otherwise noted
Molded Small Out-Line Package (M8)
Order Number NM93C13M8 or NM93C14M8
Package Number M08A
Molded Dual-In-Line Package (N)
Order Number NM93C13N or NM93C14N
Package Number N08E
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PrintDate=1997/07/28 PrintTime=12:26:21 10788 ds011291 Rev. No. 3
www.fairchildsemi.com
Proof
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9
NM93C13/C14 256-/1024-Bit Serial EEPROM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
2. A critical component in any component of a life support
1. Life support devices or systems are devices or sysdevice or system whose failure to perform can be reatems which, (a) are intended for surgical implant into
sonably expected to cause the failure of the life support
the body, or (b) support or sustain life, and (c) whose
device or system, or to affect its safety or effectiveness.
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
Fairchild
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
www.fairchildsemi.com
Fairchild
Europe
Fax:
Email:
Deutsch Tel:
English Tel:
Français Tel:
Italiano Tel:
+49 (0) 1 80-530 85 86
europe.support@nsc.com
+49 (0) 1 80-530 85 85
+49 (0) 1 80-532 78 32
+49 (0) 1 80-532 93 58
+49 (0) 1 80-534 16 80
Fairchild
Hong Kong Ltd.
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductor
Japan Ltd.
Tel: 81-3-5620-6175
Fax: 81-3-5620-6179
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
PrintDate=1997/07/28 PrintTime=12:26:21 10788 ds011291 Rev. No. 3
Proof
10
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