NOA1213CUTAG

NOA1213 Ambient Light Sensor with Dark Current Compensation Description The NOA1213 is a very low power ambient light sensor (ALS) with an analog current output and a power down mode to conserve power. Designed primarily for handheld device applications, the active power dissipation of this chip is less than 8 mA at dark and its quiescent current consumption is less than 200 pA in power down mode. The device can operate over a very wide range of voltages from 2 V to 5.5 V. The NOA1213 employs proprietary CMOS image sensing technology from ON Semiconductor, including built−in dynamic dark current compensation to provide large signal to noise ratio (SNR) and wide dynamic range (DR) over the entire operating temperature range. The photopic optical filter provides a light response similar to that of the human eye. Together the photopic light response and dark current compensation insures accurate light level detection. www.onsemi.com 1 CUDFN6 CU SUFFIX CASE 505AL PIN ASSIGNMENT Features VDD • Senses Ambient Light and Provides an Output Current Proportional to the Ambient Light Intensity • Photopic Spectral Response • Dynamic Dark Current Compensation • Three Selectable Output Current Gain Modes in Approximately 10x • • • • • • • • • Steps Power Down Mode Less than 14 mA at 100 lux Active Power Consumption in Medium Gain Mode (Less than 8 mA at Dark) Less than 200 pA Quiescent Power Dissipation in Power Down Mode at All Light Levels Linear Response Over the Full Operating Range Senses Intensity of Ambient Light from ~0 lux to Over 100,000 lux Wide Operating Voltage Range (2 V to 5.5 V) Wide Operating Temperature Range (−40°C to 85°C) Drop−in Replacement Device in 1.6 x 1.6 mm Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications hn • Saves display power in applications such as: ♦ ♦ ♦ ♦ ♦ ♦ ♦ © Semiconductor Components Industries, LLC, 2015 November, 2017 − Rev. 0 6 IOUT VSS 2 5 NC GB1 3 4 GB2 (Top View) ORDERING INFORMATION Device Package Shipping† NOA1213CUTAG* CUDFN6 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Temperature Range: −40°C to 85°C. Vin = 2 to 5.5V GS2 GS1 VDD Photo Diode Cell Phones, PDAs, MP3 players, GPS Cameras, Video Recorders Mobile Devices with Displays or Backlit Keypads Laptops, Notebooks, Digital Signage LCD TVs and Monitors, Digital Picture Frames Automobile Dashboard Displays and Infotainment LED Indoor/Outdoor Residential and Street Lights 1 GB2 Amp C1 1μ GB1 ADC IOUT RL VSS CL IC2 NOA1212 IC1 Figure 1. Typical Application Circuit 1 Publication Order Number: NOA1213/D NOA1213 GS2 GS1 GB2 GB1 VOUT Amp IOUT hn RL Photo Diode Reference Diode Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin Pin Name Description 1 VDD Power pin. 2 VSS Ground pin. 3 GB1 In conjunction with GB2, selects between three gain modes and power down. 4 GB2 In conjunction with GB1, selects between three gain modes and power down. 5 NC Not connected. This may be connected to ground or left floating. 6 IOUT Analog current output. EP VSS Exposed pad, internally connected to ground. Should be connected to ground. Table 2. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Input power supply Rating VDD 6 V Input voltage range VIN −0.3 to VDD + 0.3 V Output voltage range VOUT −0.3 to VDD + 0.2 V Output current range Io 0 to 15 mA TJ(max) −40 to 85 °C Maximum Junction Temperature TSTG −40 to 85 °C ESD Capability, Human Body Model (Note 1) ESDHBM 2 kV ESD Capability, Charged Device Model (Note 1) ESDCDM 750 V ESD Capability, Machine Model (Note 1) ESDMM 150 V Moisture Sensitivity Level MSL 3 − Lead Temperature Soldering (Note 2) TSLD 260 °C Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Charged Device Model tested per ESD−STM5.3.1−1999 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78 2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D www.onsemi.com 2 NOA1213 Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < TA < 85°C) Rating Test Conditions Power supply voltage Symbol Min Typ Max Unit VDD 2 3.0 5.5 V Power supply current VDD = 3.0 V, Ev = 0 lux, H−Gain IDD_0 6 8 12 mA Power supply current VDD = 3.0 V, Ev = 100 lux, H−Gain IDD_100 35 45 55 mA Power down current All light levels IDD_PD 0.2 5 nA Output current, high−gain Ev = 100 lux, White LED Io_high 34 44.3 mA Dark output current, high−gain VDD = 3.0 V, Ev = 0 lux Io_dark 10 nA lm 590 nm Wavelength of maximum response 23.8 White LED/fluorescent current ratio Ev = 100 lux rLE 1.0 Incandescent/fluorescent current ratio Ev = 100 lux rIF 0.83 Maximum output voltage Ev = 100 lux, RL = 220 kW, H−Gain Power down time Wake up time VOMAX VDD–0.4 Ev = 100 lux, H−Gain to PD tPD 1.5 Ev = 100 lux, PD to H−Gain twu VDD–0.1 VDD V ms 300 ms Low level input voltage VIL −0.2 0.25 VDD V High level input voltage VIH 0.75 VDD VDD+0.2 V Operating free−air temperature range TA −40 85 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NOA1213 TYPICAL CHARACTERISTICS OUTPUT CURRENT (Normalized) 1.0 ALS Human Eye 0.9 Fluorescent (5000K) 0.8 0.7 White LED (5600K) 0.6 0.5 Fluorescent (2700K) 0.4 0.3 0.2 Incandescent (2850K) 0.1 0 200 300 400 500 600 700 800 WAVELENGTH (nm) 900 1000 0 Figure 3. Spectral Response (Normalized) 100 10 1 0.1 0.01 0.001 High Gain Medium Gain Low Gain 0.00001 0.01 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) 1.5 2 10000 VDD = 3.3 V 0.0001 No Load 1 kW Load 10 kW Load 100 kW Load 1000 100 10 VDD = 3.3 V 1 0.1 1 10 1 100 1000 10000 100000 1000000 Ev (lux) Figure 5. Output Current vs. Ev 10 100 Ev (lux) 1000 10000 Figure 6. Output Current vs. Ev (High Gain Mode) 400 40 White LED (5600K) White LED (5600K) 350 35 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) 1 Ratio Figure 4. Light Source Dependency (Normalized to Fluorescent Light) 10000 1000 0.5 300 250 200 150 100 50 30 25 20 15 10 5 0 0 0 200 400 600 Ev (lux) 800 1000 0 20 40 60 80 Ev (lux) Figure 7. Output Current vs. Ev, 0−1000 lux (High Gain Mode) Figure 8. Output Current vs. Ev, 0−100 lux (High Gain Mode) www.onsemi.com 4 100 NOA1213 TYPICAL CHARACTERISTICS −40 −50 −60 −70 −80 −90 −30 30 −40 40 −50 50 −60 60 −70 70 −80 80 −90 90 −101.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 10 20 30 40 50 60 70 80 90 −100 100 −110 Q −110 110 −120 −120 END VIEW 120 −130 130 −140 −150 −160 −90o 140 −170 180 170 160 150 1 6 2 5 3 4 OUTPUT CURRENT (Normalized to 20C) OUTPUT CURRENT (nA) VDD = 3.3 V 2.5 2.0 1.5 1.0 0.5 −20 0 20 40 TEMPERATURE (°C) 160 −90 90o TOP VIEW 60 80 100 1.6 1.4 VDD = 3.3 V 1.2 1.0 0.8 0.6 0.4 High Gain Mode Medium Gain Mode Low Gain Mode 0.2 0.0 −60 Figure 11. Output Current at 0 lux vs. Temperature (High Gain Mode) −40 −20 0 20 40 TEMPERATURE (°C) 60 80 100 Figure 12. Output Current at 100 lux vs. Temperature 10 9 170 SIDE VIEW o Figure 10. Output Current vs. Angle (Side View, Normalized) 3.0 −40 180 130 140 150 TOP VIEW Figure 9. Output Current vs. Angle (End View, Normalized) 0.0 −60 120 −130 −140 −150 −160 −170 90o Q 110 1 −100 100 4 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 −20 5 20 3 10 6 0 2 −30 −101.0 −20 40 VDD = 3.3 V 35 8 30 6 IDD (mA) IDD (mA) 7 5 4 25 20 15 3 10 2 0 −60 VDD = 3.3 V 5 1 −40 −20 0 20 40 TEMPERATURE (°C) 60 80 0 −60 100 Figure 13. Supply Current at 0 lux vs. Temperature (High Gain Mode) −40 −20 0 20 40 TEMPERATURE (°C) 60 80 Figure 14. Supply Current at 100 lux vs. Temperature (High Gain Mode) www.onsemi.com 5 100 NOA1213 500 1.4 450 SUPPLY CURRENT (mA) 1.6 1.2 1.0 0.8 0.6 0.4 0.2 White LED (5600K) 400 350 300 250 200 150 100 50 0.0 0 0 1 2 3 4 5 6 0 200 VDD (V) Figure 15. Output Current at 100 lux vs. Supply Voltage (High Gain Mode) 400 600 Ev (Lux) 50 40 30 20 10 0 0 1 2 800 Figure 16. Supply Current vs. Ev (High Gain Mode) 60 SUPPLY CURRENT (mA) OUTPUT CURRENT (Normalized) TYPICAL CHARACTERISTICS 3 VDD (V) 4 5 Figure 17. Supply Current vs. Supply Voltage (High Gain Mode) www.onsemi.com 6 6 1000 NOA1213 DESCRIPTION OF OPERATION Ambient Light Sensor Architecture transmits photons in the visible spectrum which are primarily detected by the human eye and exhibits excellent IR rejection. The photo response of this sensor is as shown in Figure 3. The ambient light signal detected by the photo diode is converted to an analog output current by an amplifier with programmable gain. Table 4 shows the gain setting and the corresponding light sensitivity. The NOA1213 employs a sensitive photo diode fabricated in ON Semiconductor’s standard CMOS process technology. The major components of this sensor are as shown in Figure 2 . The photons which are to be detected pass through an ON Semiconductor proprietary color filter limiting extraneous photons and thus performing as a band pass filter on the incident wave front. The filter only Table 4. PROGRAMMABLE GAIN SETTINGS GB2 GB1 Mode Approximate Output Current @ 100 lux Approximate Output Current @ 1000 lux Saturation 0 0 Power Down − − − 0 1 High Gain 34.1 mA 365 mA ~10,000 lux 1 0 Medium Gain 3.56 mA 37.3 mA ~100,000 lux 1 1 Low Gain 0.387 mA 4.19 mA > 100,000 lux Power Down Mode maximum desired EV as shown in Equation 3. Equation 4 computes the value for RL (High−Gain mode). This device can be placed in a power down mode by setting GB1 and GB2 to logic low level. In order for proper operation of this mode GB1 and GB2 should stay low 1.5 ms. (eq. 3) R L + ǒV DD * 0.4 VǓńE VMAX * ǒ100 luxń34.5 mAǓ (eq. 4) For example, consider a 5 V supply with a desired EVMAX = 1000 lux, the value of RL would be 13.3 kW. The value for RL can easily be computed for different NOA1213 gain ranges by substituting the appropriate output current at 100 lux from Table 4. The optional capacitor CL can be used to form a low−pass filter to remove 50/60 Hz filter or other unwanted noise sources as computed with Equation 5. External Component Selection The NOA1213 outputs a current in direct response to the incident illumination. In many applications it is desirable to convert the output current into voltage. It may also be desirable to filter the effects of 50/60 Hz flicker or other light source transients. Conversion from current to voltage may be accomplished by adding load resistor RL to the output. The value of RL is bounded on the high side by the potential output saturation of the amplifier at high ambient light levels. RL is bounded on the low side by the output current limiting of the internal amplifier and to minimize power consumption. Equation 1 describes the relationship of light input to current output for the High−Gain mode. I OUT + ǒ34.5 mAń100 luxǓ * E V V OMAX + ǒ34.5 mAń100 luxǓ * E VMAX * R L C L + 1ń2p f c R L (eq. 5) For our example, to filter out 60Hz flicker the value of CL would be 200 nF. Power Supply Bypassing and Printed Circuit Board Design Power supply bypass and decoupling can typically be handled with a low cost 0.1 mF to 1.0 mF capacitor. The exposed pad on the bottom of the package is internally connected to VSS pin 2 and should be soldered to the printed circuit board. (eq. 1) By adding RL to the output, IOUT is converted into a voltage according to Equation 2. V OUT + I OUT * R L + ǒ34.5 mAń100 luxǓ * E V * R L (eq. 2) The range of the output voltage is limited by the output stage to the VOMAX parameter value of VDD – 0.4 V at the NOTE: Oblique illumination with IR light can disrupt normal operation. Please request App Note “Known NOA1213CUTAG Performance Aberrations” for more details. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CUDFN6 1.6x1.6, 0.5P CASE 505AL ISSUE A 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.10 AND 0.20MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D PIN 1 2X DATE 09 FEB 2017 E 0.10 C 2X DIM A A1 A3 b b2 D D2 E E2 e L L2 0.10 C TOP VIEW A 0.10 C A3 0.08 C A1 SIDE VIEW NOTE 4 L2 C 0.10 M 6X L D2 PIN ONE REFERENCE 1 3 SEATING PLANE GENERIC MARKING DIAGRAM* C A B *No marking due to clear package 0.10 M C A B E2 b2 6 4 6X e MILLIMETERS MIN MAX 0.55 0.65 0.00 0.05 0.20 REF 0.15 0.25 0.15 REF 1.60 BSC 1.05 1.15 1.60 BSC 0.45 0.55 0.50 BSC 0.25 0.35 0.17 REF RECOMMENDED MOUNTING FOOTPRINT* 1.20 b 6X 0.48 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW 0.60 1.90 1 0.50 PITCH 6X 0.28 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON89262F CUDFN6, 1.6X1.6, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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