NPMC Series
Ultra Low Capacitance
TSPD
The NPMC series of Low Capacitance Thyristor Surge Protection
Devices (TSPD) protect sensitive electronic equipment from transient
overvoltage conditions. Due to their ultra low off−state capacitance
(Co), they offer minimal signal distortion for high speed equipment
such as DSL and T1/E1 circuits. The low nominal offstate capacitance
translates into the extremely low differential capacitance offering
superb linearity with applied voltage or frequency.
The NPMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
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ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 − 350 VOLTS
Features
•
•
•
•
•
•
Ultra Low − Micro Capacitance
Low Leakage (Transparent)
High Surge Current Capabilities
Precise Turn on Voltages
Low Voltage Overshoot
These are Pb−Free Devices
T
R
Typical Applications
SMB
JEDEC DO−214AA
CASE 403C
• xDSL Central Office and Customer Premise
• T1/E1
• Other Broadband High Speed Data Transmission Equipment
ELECTRICAL PARAMETERS
MARKING DIAGRAM
VDRM
V(BO)
VT
IDRM
I(BO)
IT
IH
Device
V
V
V
A
mA
A
mA
NP0640SxMCT3G
58
77
4
5
800
2.2
150
NP0720SxMCT3G
65
88
4
5
800
2.2
150
NP0900SxMCT3G
75
98
4
5
800
2.2
150
NP1100SxMCT3G
90
130
4
5
800
2.2
150
NP1300SxMCT3G
120
160
4
5
800
2.2
150
NP1500SxMCT3G
140
180
4
5
800
2.2
150
NP1800SxMCT3G
170
220
4
5
800
2.2
150
NP2100SxMCT3G
180
240
4
5
800
2.2
150
NP2300SxMCT3G
190
260
4
5
800
2.2
150
NP2600SxMCT3G
220
300
4
5
800
2.2
150
NP3100SxMCT3G
275
350
4
5
800
2.2
150
NP3500SxMCT3G
320
400
4
5
800
2.2
150
G = indicates leadfree, RoHS compliant
*
Recognized Components
© Semiconductor Components Industries, LLC, 2010
December, 2010 − Rev. 2
1
AYWW
xxxxMG
G
A
Y
WW
xxxx
= Assembly Location
= Year
= Work Week
= Specific Device Code
(NPxxx0SxMC)
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NPxxx0SxMCT3G
Package
Shipping†
SMB
(Pb−Free)
2500 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NP0640SAMC/D
NPMC Series
TEL−COM STANDARDS
Waveform
x = series ratings
Voltage s)
Current s)
A
B
C
Unit
2x10
2x10
150
250
500
A(pk)
TIA−968−A
10x160
10x160
90
150
200
GR−1089−CORE
10x360
10x360
75
125
175
TIA−968−A
10x560
10x560
50
100
150
Specification
GR−1089−CORE
ITU−T K.20/21
10x700
5x310
75
100
200
GR−1089−CORE
10x1000
10x1000
50
80
100
SURGE RATINGS
Characteristics
Symbol
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 1, 2 and 3)
2 x 10 mSec
8 x 20 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
A
B
C
Unit
A(pk)
IPPS1
IPPS2
IPPS3
IPPS4
IPPS5
IPPS6
IPPS7
150
150
90
75
50
75
50
250
250
150
125
100
100
80
500
400
200
150
150
200
100
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
3. Nominal values may not represent the maximum capability of a device.
CAPACITANCE
Max
Characteristics
(f=1.0 MHz, 1.0 Vrms, 2 Vdc bias)
(Co Apx 45% @ 50 V)
Symbol
NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
Co
A
B
C
23
23
23
23
23
23
23
23
23
23
23
23
29
29
29
29
29
29
29
29
29
29
29
29
33
33
33
33
33
33
33
33
33
33
33
33
Unit
pF
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
VDRM
Rating
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
(Stresses exceeding Maximum Ratings may damage
the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended
Operating Conditions is not implied. Extended
exposure to stresses above the Recommended
Operating Conditions may affect device reliability.)
Value
Unit
NP0640SxMCT3G
±58
V
NP0720SxMCT3G
±65
NP0900SxMCT3G
±75
NP1100SxMCT3G
±90
NP1300SxMCT3G
±120
NP1500SxMCT3G
±140
NP1800SxMCT3G
±170
NP2100SxMCT3G
±180
NP2300SxMCT3G
±190
NP2600SxMCT3G
±220
NP3100SxMCT3G
±275
NP3500SxMCT3G
±320
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2
NPMC Series
ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)
Symbol
V(BO)
I(BO)
IH
IDRM
VT
di/dt
Rating
Min
Breakover voltage: The maximum voltage across the device in or at the
breakdown region. (Note 4)
VDC = 1000 V, dv/dt = 100 V/ms
Max
Unit
NP0640SxMCT3G
Typ
±77
V
NP0720SxMCT3G
±88
NP0900SxMCT3G
±98
NP1100SxMCT3G
±130
NP1300SxMCT3G
±160
NP1500SxMCT3G
±180
NP1800SxMCT3G
±220
NP2100SxMCT3G
±240
NP2300SxMCT3G
±260
NP2600SxMCT3G
±300
NP3100SxMCT3G
±350
NP3500SxMCT3G
±400
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: Minimum current required to maintain the device in the on−state. (Notes 5, 6)
Off−state Current: The dc value of current that results from the application of the off−state voltage
800
150
mA
mA
VD = 50 V
2
VD = VDRM
5
On−state Voltage: The voltage across the device in the on−state condition.
IT = 2.2 A (pk), PW = 300 ms, DC = 2%
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
mA
4
V
±500
A/ms
4. Electrical parameters are based on pulsed test methods.
5. Measured under pulsed conditions to reduce heating
6. Allow cooling before testing second polarity.
THERMAL CHARACTERISTICS
Symbol
TSTG
TJ
R0JA
Rating
Value
Unit
Storage Temperature Range
−65 to +150
°C
Junction Temperature
−40 to +150
°C
90
°C/W
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
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3
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
+I
Symbol
Parameter
IPPS
VDRM
Repetitive Peak Off−state Voltage
ITSM
V(BO)
Breakover Voltage
IT
IDRM
Off−state Current
IH
I(BO)
Breakover Current
IH
Holding Current
VT
On−state Voltage
IT
On−state Current
ITSM
Nonrepetitive Peak On−state Current
IPPS
Nonrepetitive Peak Impulse Current
VD
Off−state Voltage
ID
Off−state Current
VT
Off−State Region
I(BO)
−Voltage
On−State Region
NPMC Series
ID
IDRM
+Voltage
VD
V(BO)
VDRM
−I
Figure 1. Voltage Current Characteristics of TSPD
Ipp − PEAK PULSE CURRENT − %Ipp
10
1
0.1
1
10
100
CURRENT DURATION (s)
tr = rise time to peak value
tf = decay time to half value
Peak
Value
100
Half Value
50
0
1000
0 tr
tf
TIME (ms)
Figure 2. Nonrepetitive On−State Current vs. Time
(ITSM)
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (IPPS)
40
35
CAPACITANCE (pF)
PEAK ON−STATE CURRENT
100
30
25
20
+125°C
15
−40 to +25°C
10
5
0
0
10
20
30
40
50
VOLTAGE (V)
Figure 4. Capacitance vs. Off−State Voltage
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4
60
NPMC Series
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
and shorts the transient to ground, safely protecting the
circuit.
+
I(OP)
+
Protected
Equipment
−
V(OP) TSPD
−
Transient Surge
Equipment Failure Threshold
Volts
Normal System
Operating Voltage
V(Fault) TSPD
−
+
I(Fault) Protected
Equipment
−
Operation during a Fault
TSPD Transparent
TSPD Protection
TSPD Transparent
(open)
(short)
(open)
Time
Figure 6. Protection During a Transient Surge
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
DEVICE SELECTION
•TSPD looks like an open
•Circuit operates normally
When selecting a TSPD use the following key selection
parameters.
Off−State Voltage VDRM
Normal Circuit Operation
I
+ (Fault)
TSPD Protection Voltage
Upper Limit
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
•Fault voltage greater than Vbo occurs
•TSPD shorts fault to ground
•After short duration events the O/V
switches back to an open condition
•Worst case (Fail/Safe)
•O/V permanent short
•Equipment protected
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
VDRM should be greater than the peak value of these two
components:
Figure 5. Normal and Fault Conditions
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the IDRM. The IDRM should be as low as
possible. The typical value is less than 5 mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V(BO) is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The VDRM is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V(BO) is typically a 20−30% higher than the VDRM. Based
on these characteristics it is critical to choose devices which
have a VDRM higher than the normal circuit operating
voltage, and a V(BO) which is less than the failure threshold
of the protected equipment circuit. A low on−state voltage
Vt allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
VDRM > 212 + 48 = 260 VDRM
Breakover Voltage V(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing. In some cases the 100 A
“C” series device may be needed when little or no series
resistance is used. When a series current limiter is used in the
circuit a lower current level of “A” or “B” may be used. To
determine the peak current divide the maximum surge
current by the series resistance.
Hold Current (IH)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
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5
NPMC Series
TYPICAL APPLICATIONS
Tip
NP3100SCMC
Voice
NP3100SCMC
Ring
DSL
Figure 7. ADSL
NP1800SCMC
NP0640SCMC
NP0640SCMC
NP1800SCMC
TX
POWER
RX
NP1800SCMC
NP0640SCMC
NP0640SCMC
NP1800SCMC
Figure 8. T1/E1
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6
NPMC Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
C
K
J
P
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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NP0640SAMC/D